{"id":"https://openalex.org/W4220755483","doi":"https://doi.org/10.1109/isscc42614.2022.9731585","title":"A 10b Source-Driver IC with LSB-Stacked LV-to-HV-Amplify DAC Achieving 2688\u03bcm<sup>2</sup>/channel and 4.8mV DVO for Mobile OLED Displays","display_name":"A 10b Source-Driver IC with LSB-Stacked LV-to-HV-Amplify DAC Achieving 2688\u03bcm<sup>2</sup>/channel and 4.8mV DVO for Mobile OLED Displays","publication_year":2022,"publication_date":"2022-02-20","ids":{"openalex":"https://openalex.org/W4220755483","doi":"https://doi.org/10.1109/isscc42614.2022.9731585"},"language":"en","primary_location":{"id":"doi:10.1109/isscc42614.2022.9731585","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc42614.2022.9731585","pdf_url":null,"source":{"id":"https://openalex.org/S4363607897","display_name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5038376289","display_name":"Gyu-Wan Lim","orcid":null},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gyu-Wan Lim","raw_affiliation_strings":["KAIST,Daejeon,Korea","KAIST, Daejeon, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"KAIST,Daejeon,Korea","institution_ids":["https://openalex.org/I157485424"]},{"raw_affiliation_string":"KAIST, Daejeon, Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029858455","display_name":"Gyeong-Gu Kang","orcid":null},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gyeong-Gu Kang","raw_affiliation_strings":["KAIST,Daejeon,Korea","KAIST, Daejeon, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"KAIST,Daejeon,Korea","institution_ids":["https://openalex.org/I157485424"]},{"raw_affiliation_string":"KAIST, Daejeon, Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067311469","display_name":"Hyunggun Ma","orcid":"https://orcid.org/0000-0002-2976-7315"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunggun Ma","raw_affiliation_strings":["Samsung Display,Yongin,Korea","Samsung Display, Yongin, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Display,Yongin,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Display, Yongin, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041233677","display_name":"Moonjae Jeong","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Moonjae Jeong","raw_affiliation_strings":["Samsung Display,Yongin,Korea","Samsung Display, Yongin, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Display,Yongin,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Display, Yongin, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101602883","display_name":"Hyun\u2010Sik Kim","orcid":"https://orcid.org/0000-0002-4564-7938"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun-Sik Kim","raw_affiliation_strings":["KAIST,Daejeon,Korea","KAIST, Daejeon, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"KAIST,Daejeon,Korea","institution_ids":["https://openalex.org/I157485424"]},{"raw_affiliation_string":"KAIST, Daejeon, Korea","institution_ids":["https://openalex.org/I157485424"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":4.4653,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.96350341,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"110","last_page":"112"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.58869469165802},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5615318417549133},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.5453696250915527},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5211315751075745},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4914764165878296},{"id":"https://openalex.org/keywords/resolution","display_name":"Resolution (logic)","score":0.46916159987449646},{"id":"https://openalex.org/keywords/least-significant-bit","display_name":"Least significant bit","score":0.46687597036361694},{"id":"https://openalex.org/keywords/column","display_name":"Column (typography)","score":0.4465039074420929},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.44200509786605835},{"id":"https://openalex.org/keywords/interpolation","display_name":"Interpolation (computer graphics)","score":0.42632627487182617},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.42521196603775024},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.32248327136039734},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3141372799873352},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2047824263572693},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.15846586227416992},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.09606906771659851}],"concepts":[{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.58869469165802},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5615318417549133},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.5453696250915527},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5211315751075745},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4914764165878296},{"id":"https://openalex.org/C138268822","wikidata":"https://www.wikidata.org/wiki/Q1051925","display_name":"Resolution (logic)","level":2,"score":0.46916159987449646},{"id":"https://openalex.org/C4305246","wikidata":"https://www.wikidata.org/wiki/Q3885225","display_name":"Least significant bit","level":2,"score":0.46687597036361694},{"id":"https://openalex.org/C2780551164","wikidata":"https://www.wikidata.org/wiki/Q2306599","display_name":"Column (typography)","level":3,"score":0.4465039074420929},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.44200509786605835},{"id":"https://openalex.org/C137800194","wikidata":"https://www.wikidata.org/wiki/Q11713455","display_name":"Interpolation (computer graphics)","level":3,"score":0.42632627487182617},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.42521196603775024},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.32248327136039734},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3141372799873352},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2047824263572693},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.15846586227416992},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.09606906771659851},{"id":"https://openalex.org/C126042441","wikidata":"https://www.wikidata.org/wiki/Q1324888","display_name":"Frame (networking)","level":2,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc42614.2022.9731585","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc42614.2022.9731585","pdf_url":null,"source":{"id":"https://openalex.org/S4363607897","display_name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.5,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W2011988824","https://openalex.org/W2042081546","https://openalex.org/W2078190803","https://openalex.org/W2181761598","https://openalex.org/W2915705465","https://openalex.org/W2964808304","https://openalex.org/W3091160939","https://openalex.org/W3121567222"],"related_works":["https://openalex.org/W2181446147","https://openalex.org/W3200817179","https://openalex.org/W1960166976","https://openalex.org/W1992708211","https://openalex.org/W2380067098","https://openalex.org/W1548152478","https://openalex.org/W2137172615","https://openalex.org/W828573108","https://openalex.org/W2303580201","https://openalex.org/W2106247205"],"abstract_inverted_index":{"As":[0,217],"the":[1,24,28,31,35,67,82,89,95,102,125,135,152,158,183,188,220,253,284,299,304,310],"spatial":[2],"resolution":[3,26,267],"of":[4,27,34,46,55,66,75,88,154,160,187,207,222,228,298,312,336],"mobile":[5],"OLED":[6,100],"displays":[7],"increases,":[8],"more":[9],"than":[10,278],"a":[11,19,50,60,73,140,161,193,233,258,272,279,334],"thousand":[12],"column":[13,36,57],"channels":[14,58],"must":[15,38,107],"be":[16,108,244],"integrated":[17],"into":[18],"source-driver":[20],"IC":[21],"(SD-IC).":[22],"Furthermore,":[23],"data":[25],"DAC":[29,78,136],"occupying":[30],"majority":[32],"area":[33,137,206],"channel":[37],"become":[39],"higher":[40],"for":[41,172,283],"color-depth":[42],"improvement.":[43],"The":[44,63],"top-left":[45],"Fig.":[47,155,223],"5.9.1":[48],"shows":[49],"typical":[51],"SD-IC":[52,126,203],"architecture":[53],"composed":[54],"R-DAC-based":[56],"sharing":[59],"global":[61],"resistor-string.":[62],"switch-array":[64],"size":[65,127,301],"conventional":[68],"R-DAC":[69,242,306],"increases":[70],"proportionally":[71],"to":[72,123,133,243,303,322,328],"power":[74],"2":[76],"with":[77,94,110,246,309],"resolution.":[79],"Moreover,":[80],"since":[81],"full-scale":[83],"range":[84,97],"<tex":[85,286],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[86,210,287],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">${\\left(FSR\\,=\\,V_{H}\\,-\\,V_{L}\\right)}$</tex>":[87],"R-string":[90],"is":[91,170,178,276,333],"directly":[92],"correlated":[93],"dynamic":[96],"in":[98,151,192,219,289,307],"an":[99,200,205,240],"display,":[101],"R-DAC,":[103],"including":[104],"level-shifters":[105],"(L/S),":[106],"implemented":[109],"high-voltage":[111],"MOSFETs":[112,249],"(HV-MOS).":[113],"Accordingly,":[114],"even":[115,213],"modern":[116],"CMOS":[117],"technology":[118],"nodes":[119],"are":[120,319],"still":[121],"unable":[122],"shrink":[124],"considerably.":[128],"Thus":[129],"far,":[130],"many":[131],"efforts":[132],"improve":[134],"efficiency":[138],"employing":[139],"voltage-interpolative":[141,338],"sub-DAC":[142],"have":[143],"been":[144],"reported":[145],"[1":[146],"\u2013":[147],"3],":[148],"as":[149],"shown":[150,218],"top-middle":[153],"5.9.1.":[156],"However,":[157],"use":[159],"2-output":[162],"HV":[163,254],"R-dAc,":[164],"which":[165,238,332],"occupies":[166],"2\u00d7":[167],"larger":[168],"area,":[169],"mandatory":[171],"voltage":[173],"interpolation.":[174],"Mismatch":[175],"between":[176],"sub-DACs":[177],"also":[179],"inevitable,":[180],"and":[181,256,325],"thus":[182,326],"inter-channel":[184,330],"uniformity,":[185],"one":[186],"key":[189,226],"performance":[190],"metrics":[191],"SD-IC,":[194],"deteriorates":[195],"significantly.":[196],"This":[197],"paper":[198],"presents":[199],"ultra-compact-sized":[201],"10b":[202],"achieving":[204],"2688\u03bcm":[208],"<sup":[209],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[211],"/nel":[212],"without":[214],"adopting":[215],"voltage-interpolation.":[216],"top-right":[221],"5.9.1,":[224],"two":[225],"innovations":[227,318],"this":[229,292],"work":[230,293],"include:":[231],"1)":[232],"mismatch-insensitive":[234],"switched-capacitor-based":[235],"LV-to-HV-amplify":[236],"DAC,":[237],"enables":[239],"8b":[241],"realized":[245],"only":[247],"low-voltage":[248],"(LV-MOS)":[250],"while":[251],"obtaining":[252],"output,":[255],"2)":[257],"deviation-free":[259],"2b":[260],"LSB":[261],"stack-up":[262],"(LSU)":[263],"technique":[264],"enabling":[265],"finer":[266],"consuming":[268],"little":[269],"area.":[270],"Considering":[271],"1.5V":[273],"thin-gate":[274],"MOS":[275,282],"24\u00d7smaller":[277],"5V":[280],"thick-gate":[281],"same":[285],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">${R_{\\text{ON}}}$</tex>":[288],"130nm":[290],"CMOS,":[291],"can":[294],"achieve":[295],"dramatic":[296],"shrinkage":[297],"chip":[300],"due":[302],"all-LV-MOS-based":[305],"conjunction":[308],"elimination":[311],"L/S.":[313],"In":[314],"addition,":[315],"both":[316],"our":[317],"highly":[320],"robust":[321],"process":[323],"variations":[324],"contribute":[327],"overcoming":[329],"mismatch,":[331],"drawback":[335],"prior":[337],"schemes.":[339]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}