{"id":"https://openalex.org/W2610873142","doi":"https://doi.org/10.1109/isqed.2017.7918358","title":"Wordline overdriving test: An effective predictive testing method for SRAMs against BTI aging","display_name":"Wordline overdriving test: An effective predictive testing method for SRAMs against BTI aging","publication_year":2017,"publication_date":"2017-03-01","ids":{"openalex":"https://openalex.org/W2610873142","doi":"https://doi.org/10.1109/isqed.2017.7918358","mag":"2610873142"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2017.7918358","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2017.7918358","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 18th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012059776","display_name":"Jizhe Zhang","orcid":"https://orcid.org/0000-0001-7874-5545"},"institutions":[{"id":"https://openalex.org/I1174212","display_name":"University of Southern California","ror":"https://ror.org/03taz7m60","country_code":"US","type":"education","lineage":["https://openalex.org/I1174212"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Jizhe Zhang","raw_affiliation_strings":["Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, USA"],"affiliations":[{"raw_affiliation_string":"Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, USA","institution_ids":["https://openalex.org/I1174212"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100601790","display_name":"Sandeep K. Gupta","orcid":"https://orcid.org/0000-0002-2585-9378"},"institutions":[{"id":"https://openalex.org/I1174212","display_name":"University of Southern California","ror":"https://ror.org/03taz7m60","country_code":"US","type":"education","lineage":["https://openalex.org/I1174212"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sandeep K. Gupta","raw_affiliation_strings":["Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, USA"],"affiliations":[{"raw_affiliation_string":"Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, USA","institution_ids":["https://openalex.org/I1174212"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5012059776"],"corresponding_institution_ids":["https://openalex.org/I1174212"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.0371087,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"454","last_page":"459"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8845311999320984},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.5621262788772583},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.5038849711418152},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.49014005064964294},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.4791499972343445},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.46923357248306274},{"id":"https://openalex.org/keywords/accelerated-aging","display_name":"Accelerated aging","score":0.4655172824859619},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.45655694603919983},{"id":"https://openalex.org/keywords/focus","display_name":"Focus (optics)","score":0.4150720238685608},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.38919758796691895},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.289312481880188},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.26740872859954834},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25386857986450195},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.16034343838691711},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.15368568897247314},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12856170535087585},{"id":"https://openalex.org/keywords/machine-learning","display_name":"Machine learning","score":0.060598015785217285}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8845311999320984},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.5621262788772583},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.5038849711418152},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.49014005064964294},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.4791499972343445},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.46923357248306274},{"id":"https://openalex.org/C118820876","wikidata":"https://www.wikidata.org/wiki/Q4672283","display_name":"Accelerated aging","level":2,"score":0.4655172824859619},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.45655694603919983},{"id":"https://openalex.org/C192209626","wikidata":"https://www.wikidata.org/wiki/Q190909","display_name":"Focus (optics)","level":2,"score":0.4150720238685608},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.38919758796691895},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.289312481880188},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.26740872859954834},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25386857986450195},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.16034343838691711},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.15368568897247314},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12856170535087585},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.060598015785217285},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2017.7918358","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2017.7918358","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 18th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1600691640","https://openalex.org/W1775604791","https://openalex.org/W1996224929","https://openalex.org/W2018632396","https://openalex.org/W2034405781","https://openalex.org/W2035025053","https://openalex.org/W2046722603","https://openalex.org/W2055170789","https://openalex.org/W2069345435","https://openalex.org/W2083270183","https://openalex.org/W2095953597","https://openalex.org/W2098045174","https://openalex.org/W2102729267","https://openalex.org/W2102785080","https://openalex.org/W2113115586","https://openalex.org/W2127763613","https://openalex.org/W2133245981","https://openalex.org/W2137706187","https://openalex.org/W2138021254","https://openalex.org/W2138577377","https://openalex.org/W2211628523","https://openalex.org/W2290052517","https://openalex.org/W2532682585","https://openalex.org/W6649419997","https://openalex.org/W6659174997"],"related_works":["https://openalex.org/W3150866391","https://openalex.org/W1909296377","https://openalex.org/W2112214579","https://openalex.org/W2310523918","https://openalex.org/W4200470254","https://openalex.org/W2089002058","https://openalex.org/W3185029353","https://openalex.org/W3116379964","https://openalex.org/W2766443086","https://openalex.org/W2793465010"],"abstract_inverted_index":{"Negative":[0],"bias":[1,7],"temperature":[2,8],"instability":[3,9],"(NBTI)":[4],"and":[5,114],"positive":[6],"(PBTI)":[10],"cause":[11],"SRAM":[12,22,52,81],"stability":[13],"degradation":[14],"during":[15,59],"its":[16],"lifetime.":[17,105],"Hence,":[18],"some":[19],"of":[20,39,87],"the":[21,40,76,80,85,95],"cells":[23,53,96],"that":[24,97,116],"are":[25,91],"functional":[26],"initially":[27],"may":[28,55],"fail":[29,56,99],"due":[30],"to":[31,83,93],"aging":[32,58,101],"after":[33,57,100],"usage.":[34],"This":[35],"causes":[36],"field":[37],"failures":[38],"shipped":[41],"chips.":[42],"In":[43],"this":[44],"paper":[45],"we":[46,78,90],"focus":[47],"on":[48],"screening":[49],"out":[50],"these":[51],"which":[54],"post-fabrication":[60],"testing.":[61],"We":[62,106],"propose":[63],"wordline":[64,82],"overdriving":[65],"test":[66,77,120],"(WODT),":[67],"a":[68,103,122],"novel":[69],"predictive":[70],"testing":[71],"method":[72,110],"for":[73],"SRAMs.":[74],"During":[75],"overdrive":[79],"simulate":[84],"effect":[86],"aging,":[88],"hence":[89],"able":[92],"detect":[94],"will":[98],"over":[102],"desired":[104],"compare":[107],"our":[108],"proposed":[109],"with":[111,121],"low-VDD":[112,119],"test,":[113],"show":[115],"WODT":[117],"outperforms":[118],"large":[123],"margin":[124],"by":[125],"achieving":[126],"dramatically":[127],"lower":[128],"quality":[129],"loss.":[130]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}