{"id":"https://openalex.org/W2397372054","doi":"https://doi.org/10.1109/isqed.2016.7479195","title":"Performance evaluation of stacked gate-all-around MOSFETs at 7 and 10 nm technology nodes","display_name":"Performance evaluation of stacked gate-all-around MOSFETs at 7 and 10 nm technology nodes","publication_year":2016,"publication_date":"2016-03-01","ids":{"openalex":"https://openalex.org/W2397372054","doi":"https://doi.org/10.1109/isqed.2016.7479195","mag":"2397372054"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2016.7479195","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2016.7479195","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 17th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110383234","display_name":"Meng-Yen Wu","orcid":null},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Meng-Yen Wu","raw_affiliation_strings":["Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5085545279","display_name":"Meng\u2010Hsueh Chiang","orcid":"https://orcid.org/0000-0003-4789-6302"},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Meng-Hsueh Chiang","raw_affiliation_strings":["Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5110383234"],"corresponding_institution_ids":["https://openalex.org/I91807558"],"apc_list":null,"apc_paid":null,"fwci":0.1838,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.55709722,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"169","last_page":"172"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.7562475204467773},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.6703088283538818},{"id":"https://openalex.org/keywords/benchmark","display_name":"Benchmark (surveying)","score":0.6313244104385376},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5890054702758789},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5790640711784363},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.5378486514091492},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5282358527183533},{"id":"https://openalex.org/keywords/square","display_name":"Square (algebra)","score":0.4927401840686798},{"id":"https://openalex.org/keywords/double-gate","display_name":"Double gate","score":0.44576162099838257},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39746394753456116},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3473381996154785},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.33603227138519287},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.24085062742233276},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2177446484565735},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1898804008960724},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.14674720168113708},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1363479197025299},{"id":"https://openalex.org/keywords/acoustics","display_name":"Acoustics","score":0.08512517809867859}],"concepts":[{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.7562475204467773},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.6703088283538818},{"id":"https://openalex.org/C185798385","wikidata":"https://www.wikidata.org/wiki/Q1161707","display_name":"Benchmark (surveying)","level":2,"score":0.6313244104385376},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5890054702758789},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5790640711784363},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5378486514091492},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5282358527183533},{"id":"https://openalex.org/C135692309","wikidata":"https://www.wikidata.org/wiki/Q111124","display_name":"Square (algebra)","level":2,"score":0.4927401840686798},{"id":"https://openalex.org/C3019885731","wikidata":"https://www.wikidata.org/wiki/Q48087455","display_name":"Double gate","level":5,"score":0.44576162099838257},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39746394753456116},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3473381996154785},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33603227138519287},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.24085062742233276},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2177446484565735},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1898804008960724},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.14674720168113708},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1363479197025299},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.08512517809867859},{"id":"https://openalex.org/C205649164","wikidata":"https://www.wikidata.org/wiki/Q1071","display_name":"Geography","level":0,"score":0.0},{"id":"https://openalex.org/C13280743","wikidata":"https://www.wikidata.org/wiki/Q131089","display_name":"Geodesy","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2016.7479195","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2016.7479195","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 17th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.5899999737739563}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1976952065","https://openalex.org/W2018412829","https://openalex.org/W2066748541","https://openalex.org/W2072607061","https://openalex.org/W2099133288","https://openalex.org/W2102412728","https://openalex.org/W2120782742","https://openalex.org/W2133800303","https://openalex.org/W2162517322","https://openalex.org/W2187515429","https://openalex.org/W2963384648","https://openalex.org/W2964330863","https://openalex.org/W6644582336","https://openalex.org/W6683806362"],"related_works":["https://openalex.org/W2366546511","https://openalex.org/W2143475986","https://openalex.org/W2265616871","https://openalex.org/W1928698852","https://openalex.org/W3145896313","https://openalex.org/W1976836277","https://openalex.org/W2183842191","https://openalex.org/W3010293313","https://openalex.org/W2007156112","https://openalex.org/W3098823984"],"abstract_inverted_index":{"Performance":[0],"evaluation":[1],"of":[2,54],"stacked":[3,22,69],"gate-all-around":[4],"(GAA)":[5],"MOSFETs":[6],"on":[7,16,58],"device":[8],"scaling":[9],"and":[10,80],"performance":[11],"benchmark":[12],"against":[13],"FinFETs":[14],"based":[15,57],"scale":[17,60],"length":[18],"are":[19,89],"presented.":[20],"While":[21],"GAA":[23,55,65],"technique":[24],"provides":[25,82],"higher":[26,83],"current":[27],"(per":[28],"pitch),":[29],"FinFET":[30],"counterpart":[31],"shows":[32],"its":[33],"advantage":[34,40],"in":[35],"intrinsic":[36,87],"gate":[37],"delay.":[38],"Such":[39],"becomes":[41],"even":[42],"more":[43,68],"significant":[44],"toward":[45],"smaller":[46],"technology":[47],"node.":[48],"By":[49],"adjusting":[50],"the":[51,62,72,76],"aspect":[52],"ratio":[53],"devices":[56],"same":[59,77],"length,":[61],"thinner":[63],"rectangular":[64],"case":[66,74],"allows":[67],"layers":[70],"than":[71],"square":[73],"at":[75],"total":[78],"height":[79],"hence":[81],"current.":[84],"However,":[85],"comparable":[86],"speeds":[88],"predicted":[90],"for":[91],"both":[92],"cases.":[93]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}