{"id":"https://openalex.org/W1977072728","doi":"https://doi.org/10.1109/isqed.2014.6783375","title":"Avoiding unnecessary write operations in STT-MRAM for low power implementation","display_name":"Avoiding unnecessary write operations in STT-MRAM for low power implementation","publication_year":2014,"publication_date":"2014-03-01","ids":{"openalex":"https://openalex.org/W1977072728","doi":"https://doi.org/10.1109/isqed.2014.6783375","mag":"1977072728"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2014.6783375","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2014.6783375","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Fifteenth International Symposium on Quality Electronic Design","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5090692955","display_name":"Rajendra Bishnoi","orcid":"https://orcid.org/0000-0002-0516-7112"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Rajendra Bishnoi","raw_affiliation_strings":["Chair of Dependable Nano Computing (CDNC), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany","Dept. of Dependable Nano-Comput., Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Chair of Dependable Nano Computing (CDNC), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Dept. of Dependable Nano-Comput., Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064797552","display_name":"Fabian Oboril","orcid":"https://orcid.org/0000-0002-2647-4824"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Fabian Oboril","raw_affiliation_strings":["Chair of Dependable Nano Computing (CDNC), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany","Dept. of Dependable Nano-Comput., Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Chair of Dependable Nano Computing (CDNC), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Dept. of Dependable Nano-Comput., Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110517906","display_name":"Mojtaba Ebrahimi","orcid":null},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Mojtaba Ebrahimi","raw_affiliation_strings":["Chair of Dependable Nano Computing (CDNC), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany","Dept. of Dependable Nano-Comput., Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Chair of Dependable Nano Computing (CDNC), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Dept. of Dependable Nano-Comput., Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064445713","display_name":"Mehdi B. Tahoori","orcid":"https://orcid.org/0000-0002-8829-5610"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Mehdi B. Tahoori","raw_affiliation_strings":["Chair of Dependable Nano Computing (CDNC), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany","Dept. of Dependable Nano-Comput., Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Chair of Dependable Nano Computing (CDNC), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Dept. of Dependable Nano-Comput., Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5090692955"],"corresponding_institution_ids":["https://openalex.org/I102335020"],"apc_list":null,"apc_paid":null,"fwci":5.2199,"has_fulltext":false,"cited_by_count":57,"citation_normalized_percentile":{"value":0.95930688,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"548","last_page":"553"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9973000288009644,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.801451563835144},{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.7975960373878479},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.740187406539917},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6849750280380249},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.6496886610984802},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5165387988090515},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.509515106678009},{"id":"https://openalex.org/keywords/tunnel-magnetoresistance","display_name":"Tunnel magnetoresistance","score":0.5057690143585205},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.45753955841064453},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4555273652076721},{"id":"https://openalex.org/keywords/granularity","display_name":"Granularity","score":0.4332120716571808},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.3947041630744934},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.38807347416877747},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3495798110961914},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.32817503809928894},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.32596734166145325},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1799686849117279},{"id":"https://openalex.org/keywords/magnetization","display_name":"Magnetization","score":0.1192251443862915},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.09337469935417175},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.08176487684249878}],"concepts":[{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.801451563835144},{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.7975960373878479},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.740187406539917},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6849750280380249},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.6496886610984802},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5165387988090515},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.509515106678009},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.5057690143585205},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45753955841064453},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4555273652076721},{"id":"https://openalex.org/C177774035","wikidata":"https://www.wikidata.org/wiki/Q1246948","display_name":"Granularity","level":2,"score":0.4332120716571808},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.3947041630744934},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.38807347416877747},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3495798110961914},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.32817503809928894},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.32596734166145325},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1799686849117279},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.1192251443862915},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.09337469935417175},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.08176487684249878},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/isqed.2014.6783375","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2014.6783375","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Fifteenth International Symposium on Quality Electronic Design","raw_type":"proceedings-article"},{"id":"pmh:oai:CiteSeerX.psu:10.1.1.726.7811","is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.726.7811","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://cdnc.itec.kit.edu/downloads/Papers/Bishnoi14ISQED.pdf","raw_type":"text"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8700000047683716,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320300","display_name":"European Commission","ror":"https://ror.org/00k4n6c32"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":36,"referenced_works":["https://openalex.org/W1686420892","https://openalex.org/W1976146176","https://openalex.org/W1980459528","https://openalex.org/W1983562124","https://openalex.org/W2001641336","https://openalex.org/W2002022853","https://openalex.org/W2014178805","https://openalex.org/W2020398077","https://openalex.org/W2040579068","https://openalex.org/W2054168857","https://openalex.org/W2056858041","https://openalex.org/W2084007230","https://openalex.org/W2087461437","https://openalex.org/W2087549254","https://openalex.org/W2087556742","https://openalex.org/W2109272991","https://openalex.org/W2112388836","https://openalex.org/W2116826022","https://openalex.org/W2134292769","https://openalex.org/W2135393827","https://openalex.org/W2144334298","https://openalex.org/W2144351373","https://openalex.org/W2148831941","https://openalex.org/W2150047813","https://openalex.org/W2157587823","https://openalex.org/W2543205889","https://openalex.org/W2999811406","https://openalex.org/W3143577886","https://openalex.org/W3152241699","https://openalex.org/W4235904384","https://openalex.org/W4244242927","https://openalex.org/W4251734878","https://openalex.org/W6637151178","https://openalex.org/W6644188864","https://openalex.org/W6650740685","https://openalex.org/W6681143753"],"related_works":["https://openalex.org/W4226197542","https://openalex.org/W1977755618","https://openalex.org/W2034593071","https://openalex.org/W1970094457","https://openalex.org/W2744144420","https://openalex.org/W4231059390","https://openalex.org/W3136027979","https://openalex.org/W2490184523","https://openalex.org/W2543376619","https://openalex.org/W2289300168"],"abstract_inverted_index":{"Spin":[0],"Transfer":[1],"Torque":[2],"(STT)":[3],"is":[4,34,47,62],"a":[5,36,44,50,89,112,120],"promising":[6],"emerging":[7],"memory":[8],"technology":[9],"because":[10],"of":[11,80,105],"its":[12,39],"various":[13],"advantages":[14],"such":[15],"as":[16,66],"non-volatility,":[17],"high":[18,31],"density,":[19],"virtually":[20],"infinite":[21],"endurance,":[22],"scalability":[23],"and":[24,118],"CMOS":[25],"compatibility.":[26],"Despite":[27],"all":[28],"these":[29],"features,":[30],"write":[32,95,108],"current":[33,52],"still":[35],"challenge":[37],"for":[38],"widespread":[40],"use.":[41],"When":[42],"writing":[43],"value":[45],"that":[46,67],"already":[48],"stored,":[49],"significant":[51],"flows":[53],"through":[54],"the":[55,64,71,76,81,106],"Magnetic":[56],"Tunnel":[57],"Junction":[58],"(MTJ)":[59],"cell":[60],"which":[61,91],"almost":[63],"same":[65],"required":[68],"to":[69],"flip":[70],"stored":[72],"data.":[73],"This":[74],"increases":[75],"total":[77,107],"power":[78,109],"consumption":[79,110],"memory.":[82],"To":[83],"address":[84],"this":[85],"issue,":[86],"we":[87],"propose":[88],"technique":[90,101],"can":[92,102],"avoid":[93],"unnecessary":[94],"operations":[96],"with":[97,111],"bit-level":[98],"granularity.":[99],"Our":[100],"save":[103],"68.9%":[104],"minor":[113],"area":[114],"overhead":[115],"(0.68":[116],"%)":[117],"only":[119],"small":[121],"timing":[122],"penalty":[123],"(1.33":[124],"%).":[125]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":7},{"year":2018,"cited_by_count":7},{"year":2017,"cited_by_count":8},{"year":2016,"cited_by_count":8},{"year":2015,"cited_by_count":6},{"year":2014,"cited_by_count":2}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}