{"id":"https://openalex.org/W1819507047","doi":"https://doi.org/10.1109/iscas.2002.1010761","title":"CMOS charge pumps using cross-coupled charge transfer switches with improved voltage pumping gain and low gate-oxide stress for low-voltage memory circuits","display_name":"CMOS charge pumps using cross-coupled charge transfer switches with improved voltage pumping gain and low gate-oxide stress for low-voltage memory circuits","publication_year":2003,"publication_date":"2003-06-25","ids":{"openalex":"https://openalex.org/W1819507047","doi":"https://doi.org/10.1109/iscas.2002.1010761","mag":"1819507047"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2002.1010761","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2002.1010761","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063226833","display_name":"Kyeong\u2010Sik Min","orcid":"https://orcid.org/0000-0002-1518-7037"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kyeong-Sik Min","raw_affiliation_strings":["Hynix Semiconductor, Inc., Cheonghu, South Korea","Institute of Industrial Science and Center for Collaborative Research, University of Tokyo, Tokyo, Japan","[Center for Collaborative Research, University of Tokyo, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hynix Semiconductor, Inc., Cheonghu, South Korea","institution_ids":[]},{"raw_affiliation_string":"Institute of Industrial Science and Center for Collaborative Research, University of Tokyo, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]},{"raw_affiliation_string":"[Center for Collaborative Research, University of Tokyo, Japan]","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100760021","display_name":"Young\u2010Hee Kim","orcid":"https://orcid.org/0000-0002-1111-632X"},"institutions":[{"id":"https://openalex.org/I174101054","display_name":"Changwon National University","ror":"https://ror.org/04ts4qa58","country_code":"KR","type":"education","lineage":["https://openalex.org/I174101054"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Hee Kim","raw_affiliation_strings":["Department of Electronic Engineering, Changwon NatE28099l University, South Korea","[Department of Electronic Engineering, Changwon NatE28099l University, South Korea]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Changwon NatE28099l University, South Korea","institution_ids":["https://openalex.org/I174101054"]},{"raw_affiliation_string":"[Department of Electronic Engineering, Changwon NatE28099l University, South Korea]","institution_ids":["https://openalex.org/I174101054"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102108254","display_name":"Jin-Hong Ahn","orcid":null},"institutions":[{"id":"https://openalex.org/I10654025","display_name":"SK Group (United States)","ror":"https://ror.org/00qajw440","country_code":"US","type":"company","lineage":["https://openalex.org/I10654025","https://openalex.org/I134353371"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jin-Hong Ahn","raw_affiliation_strings":["Hynix Semiconductor, Inc., Cheonghu, South Korea","[Hynix Semiconductor, Inc., Cheonghu, South Korea]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hynix Semiconductor, Inc., Cheonghu, South Korea","institution_ids":[]},{"raw_affiliation_string":"[Hynix Semiconductor, Inc., Cheonghu, South Korea]","institution_ids":["https://openalex.org/I10654025"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113616772","display_name":"Jin-Yong Chung","orcid":null},"institutions":[{"id":"https://openalex.org/I10654025","display_name":"SK Group (United States)","ror":"https://ror.org/00qajw440","country_code":"US","type":"company","lineage":["https://openalex.org/I10654025","https://openalex.org/I134353371"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jin-Yong Chung","raw_affiliation_strings":["Hynix Semiconductor, Inc., Cheonghu, South Korea","[Hynix Semiconductor, Inc., Cheonghu, South Korea]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hynix Semiconductor, Inc., Cheonghu, South Korea","institution_ids":[]},{"raw_affiliation_string":"[Hynix Semiconductor, Inc., Cheonghu, South Korea]","institution_ids":["https://openalex.org/I10654025"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5049800551","display_name":"T. Sakurai","orcid":"https://orcid.org/0000-0001-5730-1937"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Sakurai","raw_affiliation_strings":["Institute of Industrial Science and Center for Collaborative Research, University of Tokyo, Tokyo, Japan","[Institute of Industrial Science and Center for Collaborative Research, University of Tokyo, Tokyo, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Industrial Science and Center for Collaborative Research, University of Tokyo, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]},{"raw_affiliation_string":"[Institute of Industrial Science and Center for Collaborative Research, University of Tokyo, Tokyo, Japan]","institution_ids":["https://openalex.org/I74801974"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":8.6843,"has_fulltext":false,"cited_by_count":29,"citation_normalized_percentile":{"value":0.97650488,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":"5","issue":null,"first_page":"V","last_page":"545"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11230","display_name":"Innovative Energy Harvesting Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2210","display_name":"Mechanical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11230","display_name":"Innovative Energy Harvesting Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2210","display_name":"Mechanical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11392","display_name":"Energy Harvesting in Wireless Networks","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11249","display_name":"Wireless Power Transfer Systems","score":0.9965000152587891,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/charge-pump","display_name":"Charge pump","score":0.7951728105545044},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6181523203849792},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5621727705001831},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5204299092292786},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.4811878800392151},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.47866353392601013},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.47764503955841064},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4711505174636841},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.4519413113594055},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.4490247964859009},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42766839265823364},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.41398167610168457},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.25981372594833374}],"concepts":[{"id":"https://openalex.org/C114825011","wikidata":"https://www.wikidata.org/wiki/Q440704","display_name":"Charge pump","level":4,"score":0.7951728105545044},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6181523203849792},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5621727705001831},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5204299092292786},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4811878800392151},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.47866353392601013},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.47764503955841064},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4711505174636841},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.4519413113594055},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.4490247964859009},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42766839265823364},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.41398167610168457},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.25981372594833374},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2002.1010761","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2002.1010761","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.9100000262260437}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1975131093","https://openalex.org/W1999865975","https://openalex.org/W2077879018","https://openalex.org/W2111323554","https://openalex.org/W2119807774","https://openalex.org/W2157476064"],"related_works":["https://openalex.org/W3120961607","https://openalex.org/W3148568549","https://openalex.org/W2161286015","https://openalex.org/W1648516568","https://openalex.org/W4241635412","https://openalex.org/W1851494072","https://openalex.org/W2034785288","https://openalex.org/W1987418003","https://openalex.org/W2104887505","https://openalex.org/W2103521812"],"abstract_inverted_index":{"To":[0],"overcome":[1,102],"the":[2,5,63,67,73,87,103,113],"problems":[3],"of":[4,25,46,106],"modified":[6],"Dickson":[7],"pump":[8,13,89],"like":[9],"NCP-2,":[10],"a":[11],"new":[12],"(CCTS-1)":[14],"where":[15],"simple":[16],"voltage":[17,69],"doublers":[18,48],"are":[19],"cascaded":[20],"in":[21,32,38,57,90],"series":[22],"and":[23,41,72],"each":[24],"them":[26],"has":[27,49,62],"cross-coupled":[28],"configuration":[29],"is":[30,54,99,116],"studied":[31],"this":[33,44,58],"paper":[34,59],"for":[35,86],"possible":[36],"use":[37],"low-voltage":[39],"EEPROMs":[40],"DRAMs.":[42],"Though":[43],"concept":[45],"cascading":[47],"been":[50],"previously":[51],"proposed,":[52],"it":[53],"firstly":[55],"addressed":[56],"that":[60,80],"CCTS-1":[61,81,107],"lower":[64],"gate-oxide":[65],"stress,":[66],"improved":[68],"pumping":[70],"gain,":[71],"better":[74],"power":[75],"efficiency":[76],"than":[77],"NCP-2":[78],"so":[79],"can":[82],"be":[83],"more":[84],"suitable":[85],"multi-stage":[88],"particular":[91],"at":[92],"low":[93],"V/sub":[94],"CC/.":[95],"In":[96],"addition,":[97],"CCTS-2":[98],"proposed":[100],"to":[101],"degraded":[104],"body-effect":[105],"without":[108],"using":[109],"boosted":[110],"clocks":[111],"when":[112],"stage":[114],"number":[115],"large.":[117]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}