{"id":"https://openalex.org/W4225331999","doi":"https://doi.org/10.1109/irps48227.2022.9764525","title":"Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization","display_name":"Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization","publication_year":2022,"publication_date":"2022-03-01","ids":{"openalex":"https://openalex.org/W4225331999","doi":"https://doi.org/10.1109/irps48227.2022.9764525"},"language":"en","primary_location":{"id":"doi:10.1109/irps48227.2022.9764525","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764525","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://www.osti.gov/servlets/purl/2003803","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5057334057","display_name":"Bhawani Shankar","orcid":"https://orcid.org/0000-0002-6674-3267"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Bhawani Shankar","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057562620","display_name":"Zhengliang Bian","orcid":"https://orcid.org/0000-0002-3097-9016"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zhengliang Bian","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101513206","display_name":"Ke Zeng","orcid":"https://orcid.org/0009-0000-5570-3350"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ke Zeng","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082847598","display_name":"Chuanzhe Meng","orcid":null},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chuanzhe Meng","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074326638","display_name":"Rafael Perez Martinez","orcid":"https://orcid.org/0000-0001-6488-1247"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rafael Perez Martinez","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036450839","display_name":"Srabanti Chowdhury","orcid":"https://orcid.org/0000-0001-8367-0461"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Srabanti Chowdhury","raw_affiliation_strings":["Stanford University,Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043412956","display_name":"Brendan Gunning","orcid":"https://orcid.org/0000-0002-0497-5388"},"institutions":[{"id":"https://openalex.org/I4210104735","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I198811213","https://openalex.org/I4210104735"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Brendan Gunning","raw_affiliation_strings":["Sandia National Labs,Albuquerque,NM,USA,87123"],"affiliations":[{"raw_affiliation_string":"Sandia National Labs,Albuquerque,NM,USA,87123","institution_ids":["https://openalex.org/I4210104735"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020266205","display_name":"Jack Flicker","orcid":"https://orcid.org/0000-0002-1223-2154"},"institutions":[{"id":"https://openalex.org/I4210104735","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I198811213","https://openalex.org/I4210104735"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jack Flicker","raw_affiliation_strings":["Sandia National Labs,Albuquerque,NM,USA,87123"],"affiliations":[{"raw_affiliation_string":"Sandia National Labs,Albuquerque,NM,USA,87123","institution_ids":["https://openalex.org/I4210104735"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054044035","display_name":"Andrew Binder","orcid":"https://orcid.org/0000-0002-6649-2816"},"institutions":[{"id":"https://openalex.org/I4210104735","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I198811213","https://openalex.org/I4210104735"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Andrew Binder","raw_affiliation_strings":["Sandia National Labs,Albuquerque,NM,USA,87123"],"affiliations":[{"raw_affiliation_string":"Sandia National Labs,Albuquerque,NM,USA,87123","institution_ids":["https://openalex.org/I4210104735"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049176654","display_name":"Jeramy Ray Dickerson","orcid":"https://orcid.org/0000-0002-7954-542X"},"institutions":[{"id":"https://openalex.org/I4210104735","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I198811213","https://openalex.org/I4210104735"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jeramy Ray Dickerson","raw_affiliation_strings":["Sandia National Labs,Albuquerque,NM,USA,87123"],"affiliations":[{"raw_affiliation_string":"Sandia National Labs,Albuquerque,NM,USA,87123","institution_ids":["https://openalex.org/I4210104735"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5006920397","display_name":"Robert Kaplar","orcid":"https://orcid.org/0000-0002-7928-9104"},"institutions":[{"id":"https://openalex.org/I4210104735","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I198811213","https://openalex.org/I4210104735"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Robert Kaplar","raw_affiliation_strings":["Sandia National Labs,Albuquerque,NM,USA,87123"],"affiliations":[{"raw_affiliation_string":"Sandia National Labs,Albuquerque,NM,USA,87123","institution_ids":["https://openalex.org/I4210104735"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":11,"corresponding_author_ids":["https://openalex.org/A5057334057"],"corresponding_institution_ids":["https://openalex.org/I97018004"],"apc_list":null,"apc_paid":null,"fwci":4.3811,"has_fulltext":true,"cited_by_count":13,"citation_normalized_percentile":{"value":0.95354523,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"2B.2","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/avalanche-breakdown","display_name":"Avalanche breakdown","score":0.6955836415290833},{"id":"https://openalex.org/keywords/avalanche-diode","display_name":"Avalanche diode","score":0.6832137107849121},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.6791254878044128},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6512218713760376},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6437615752220154},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6415092349052429},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.6243234872817993},{"id":"https://openalex.org/keywords/failure-mechanism","display_name":"Failure mechanism","score":0.48642754554748535},{"id":"https://openalex.org/keywords/avalanche-photodiode","display_name":"Avalanche photodiode","score":0.47283583879470825},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.44403356313705444},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.43610674142837524},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.4117625951766968},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2595757246017456},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.20028439164161682},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17900827527046204},{"id":"https://openalex.org/keywords/detector","display_name":"Detector","score":0.1657848060131073},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1529507040977478},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.09758520126342773},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.08115556836128235}],"concepts":[{"id":"https://openalex.org/C33652038","wikidata":"https://www.wikidata.org/wiki/Q175906","display_name":"Avalanche breakdown","level":4,"score":0.6955836415290833},{"id":"https://openalex.org/C95341827","wikidata":"https://www.wikidata.org/wiki/Q175898","display_name":"Avalanche diode","level":4,"score":0.6832137107849121},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.6791254878044128},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6512218713760376},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6437615752220154},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6415092349052429},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.6243234872817993},{"id":"https://openalex.org/C3018344627","wikidata":"https://www.wikidata.org/wiki/Q1925224","display_name":"Failure mechanism","level":2,"score":0.48642754554748535},{"id":"https://openalex.org/C109679912","wikidata":"https://www.wikidata.org/wiki/Q175932","display_name":"Avalanche photodiode","level":3,"score":0.47283583879470825},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.44403356313705444},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.43610674142837524},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4117625951766968},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2595757246017456},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.20028439164161682},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17900827527046204},{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.1657848060131073},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1529507040977478},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.09758520126342773},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.08115556836128235},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps48227.2022.9764525","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764525","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:osti.gov:2003803","is_oa":true,"landing_page_url":"https://www.osti.gov/biblio/2003803","pdf_url":"https://www.osti.gov/servlets/purl/2003803","source":{"id":"https://openalex.org/S4306402487","display_name":"OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I139351228","host_organization_name":"Office of Scientific and Technical Information","host_organization_lineage":["https://openalex.org/I139351228"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":{"id":"pmh:oai:osti.gov:2003803","is_oa":true,"landing_page_url":"https://www.osti.gov/biblio/2003803","pdf_url":"https://www.osti.gov/servlets/purl/2003803","source":{"id":"https://openalex.org/S4306402487","display_name":"OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I139351228","host_organization_name":"Office of Scientific and Technical Information","host_organization_lineage":["https://openalex.org/I139351228"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5899999737739563}],"awards":[{"id":"https://openalex.org/G2209453243","display_name":null,"funder_award_id":"DE-NA0003525","funder_id":"https://openalex.org/F4320306084","funder_display_name":"U.S. Department of Energy"},{"id":"https://openalex.org/G2214935549","display_name":null,"funder_award_id":"NA0003525","funder_id":"https://openalex.org/F4320338291","funder_display_name":"Sandia National Laboratories"},{"id":"https://openalex.org/G4903105778","display_name":null,"funder_award_id":"NA0003525","funder_id":"https://openalex.org/F4320306084","funder_display_name":"U.S. Department of Energy"},{"id":"https://openalex.org/G4947178736","display_name":null,"funder_award_id":"-NA0003525","funder_id":"https://openalex.org/F4320306084","funder_display_name":"U.S. Department of Energy"},{"id":"https://openalex.org/G5211897158","display_name":null,"funder_award_id":"DE-NA0003525","funder_id":"https://openalex.org/F4320332369","funder_display_name":"National Nuclear Security Administration"},{"id":"https://openalex.org/G5339743583","display_name":null,"funder_award_id":"NA0003525","funder_id":"https://openalex.org/F4320332369","funder_display_name":"National Nuclear Security Administration"},{"id":"https://openalex.org/G8279418378","display_name":null,"funder_award_id":"DE-NA0003525","funder_id":"https://openalex.org/F4320338291","funder_display_name":"Sandia National Laboratories"}],"funders":[{"id":"https://openalex.org/F4320306084","display_name":"U.S. Department of Energy","ror":"https://ror.org/01bj3aw27"},{"id":"https://openalex.org/F4320332369","display_name":"National Nuclear Security Administration","ror":"https://ror.org/03sk1we31"},{"id":"https://openalex.org/F4320338291","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4225331999.pdf","grobid_xml":"https://content.openalex.org/works/W4225331999.grobid-xml"},"referenced_works_count":32,"referenced_works":["https://openalex.org/W942070806","https://openalex.org/W1510192432","https://openalex.org/W2014479463","https://openalex.org/W2015866014","https://openalex.org/W2065062179","https://openalex.org/W2168224221","https://openalex.org/W2336757169","https://openalex.org/W2472726102","https://openalex.org/W2524036495","https://openalex.org/W2524444794","https://openalex.org/W2766322875","https://openalex.org/W2801494195","https://openalex.org/W2899327469","https://openalex.org/W2912732266","https://openalex.org/W2945220426","https://openalex.org/W2950317360","https://openalex.org/W2963518048","https://openalex.org/W2969984515","https://openalex.org/W2991497349","https://openalex.org/W2995833747","https://openalex.org/W3010335491","https://openalex.org/W3017029412","https://openalex.org/W3041565643","https://openalex.org/W3096905567","https://openalex.org/W3098271243","https://openalex.org/W3158588984","https://openalex.org/W3212391347","https://openalex.org/W4200491145","https://openalex.org/W4210915193","https://openalex.org/W4240235572","https://openalex.org/W6785202557","https://openalex.org/W6794179169"],"related_works":["https://openalex.org/W2189181247","https://openalex.org/W2171642780","https://openalex.org/W2324745772","https://openalex.org/W2063064243","https://openalex.org/W2029938807","https://openalex.org/W2067974824","https://openalex.org/W2133500210","https://openalex.org/W2012380255","https://openalex.org/W2152348737","https://openalex.org/W1517257294"],"abstract_inverted_index":{"This":[0],"work":[1],"investigates":[2],"both":[3],"avalanche":[4,38,71,74],"behavior":[5],"and":[6,19,40,51,91,104],"failure":[7,42,95,113],"mechanism":[8,43],"of":[9,30,97],"3":[10],"kV":[11],"GaN-on-GaN":[12],"vertical":[13],"P-N":[14],"diodes,":[15],"that":[16],"were":[17],"fabricated":[18],"later":[20],"tested":[21],"under":[22],"unclamped":[23],"inductive":[24],"switching":[25],"(UIS)":[26],"stress.":[27],"The":[28],"goal":[29],"this":[31],"study":[32],"is":[33,62,76,100],"to":[34,44,55,68,107],"use":[35],"the":[36,41,48,57,65,70,98,111],"particular":[37],"characteristics":[39],"identify":[45],"issues":[46],"with":[47,87],"field":[49],"termination":[50],"then":[52],"provide":[53],"feedback":[54],"improve":[56],"device":[58,112],"design.":[59],"DC":[60],"breakdown":[61],"measured":[63,77],"at":[64],"different":[66],"temperatures":[67],"confirm":[69],"breakdown.":[72],"Diode\u2019s":[73],"robustness":[75],"on-wafer":[78],"using":[79,102],"a":[80,88],"UIS":[81],"test":[82],"set-up":[83],"which":[84],"was":[85],"integrated":[86],"wafer":[89],"chuck":[90],"CCD":[92],"camera.":[93],"Post":[94],"analysis":[96],"diode":[99],"done":[101],"SEM":[103],"optical":[105],"microscopy":[106],"gain":[108],"insight":[109],"into":[110],"physics.":[114]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":2}],"updated_date":"2026-04-23T09:07:50.710637","created_date":"2025-10-10T00:00:00"}