{"id":"https://openalex.org/W4225314353","doi":"https://doi.org/10.1109/irps48227.2022.9764461","title":"Polarity Dependence and Metal Density Impact on Multi-Layer Inter-Level TDDB for High Voltage Application","display_name":"Polarity Dependence and Metal Density Impact on Multi-Layer Inter-Level TDDB for High Voltage Application","publication_year":2022,"publication_date":"2022-03-01","ids":{"openalex":"https://openalex.org/W4225314353","doi":"https://doi.org/10.1109/irps48227.2022.9764461"},"language":"en","primary_location":{"id":"doi:10.1109/irps48227.2022.9764461","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764461","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5005821332","display_name":"Yinghong Zhao","orcid":"https://orcid.org/0000-0001-5566-7767"},"institutions":[{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Yinghong Zhao","raw_affiliation_strings":["Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"],"affiliations":[{"raw_affiliation_string":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754","institution_ids":["https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089451409","display_name":"Ki\u2010Don Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ki-Don Lee","raw_affiliation_strings":["Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"],"affiliations":[{"raw_affiliation_string":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754","institution_ids":["https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100608183","display_name":"Manisha Sharma","orcid":"https://orcid.org/0000-0002-5976-4297"},"institutions":[{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Manisha Sharma","raw_affiliation_strings":["Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"],"affiliations":[{"raw_affiliation_string":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754","institution_ids":["https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112486247","display_name":"Joonah Yoon","orcid":null},"institutions":[{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Joonah Yoon","raw_affiliation_strings":["Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"],"affiliations":[{"raw_affiliation_string":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754","institution_ids":["https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051916326","display_name":"Rakesh Ranjan","orcid":"https://orcid.org/0000-0003-0022-0516"},"institutions":[{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rakesh Ranjan","raw_affiliation_strings":["Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"],"affiliations":[{"raw_affiliation_string":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754","institution_ids":["https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064358989","display_name":"Iqbal Mahmud","orcid":null},"institutions":[{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Iqbal Mahmud","raw_affiliation_strings":["Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"],"affiliations":[{"raw_affiliation_string":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754","institution_ids":["https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004566483","display_name":"Caleb Dongkyan Kwon","orcid":null},"institutions":[{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Caleb Dongkyan Kwon","raw_affiliation_strings":["Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"],"affiliations":[{"raw_affiliation_string":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754","institution_ids":["https://openalex.org/I4210101778"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002048347","display_name":"Myung Soo Yeo","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Myung Soo Yeo","raw_affiliation_strings":["Samsung Electronics,Samsung Foundry Business,Korea","Samsung Foundry Business, Samsung Electronics, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Samsung Foundry Business,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Foundry Business, Samsung Electronics, Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5005821332"],"corresponding_institution_ids":["https://openalex.org/I4210101778"],"apc_list":null,"apc_paid":null,"fwci":0.3219,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.33682659,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.8890661001205444},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7249860763549805},{"id":"https://openalex.org/keywords/polarity","display_name":"Polarity (international relations)","score":0.722908616065979},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.5672730207443237},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5463384985923767},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5261551737785339},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5099872350692749},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.4810252785682678},{"id":"https://openalex.org/keywords/thermal-conduction","display_name":"Thermal conduction","score":0.47496816515922546},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.42413759231567383},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.41425400972366333},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.4095892906188965},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4005224406719208},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3838239908218384},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2790886163711548},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.20813775062561035},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.19667142629623413},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.1415954828262329},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.13450747728347778},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10452830791473389},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.09235891699790955},{"id":"https://openalex.org/keywords/geometry","display_name":"Geometry","score":0.08139368891716003}],"concepts":[{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.8890661001205444},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7249860763549805},{"id":"https://openalex.org/C2777361361","wikidata":"https://www.wikidata.org/wiki/Q1112585","display_name":"Polarity (international relations)","level":3,"score":0.722908616065979},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.5672730207443237},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5463384985923767},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5261551737785339},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5099872350692749},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.4810252785682678},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.47496816515922546},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.42413759231567383},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.41425400972366333},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4095892906188965},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4005224406719208},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3838239908218384},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2790886163711548},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.20813775062561035},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.19667142629623413},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1415954828262329},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.13450747728347778},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10452830791473389},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.09235891699790955},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.08139368891716003},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C1491633281","wikidata":"https://www.wikidata.org/wiki/Q7868","display_name":"Cell","level":2,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48227.2022.9764461","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764461","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W2003765188","https://openalex.org/W2006694035","https://openalex.org/W2095053155","https://openalex.org/W2163382470","https://openalex.org/W2461142556","https://openalex.org/W2526884763","https://openalex.org/W3039784931","https://openalex.org/W3158668842","https://openalex.org/W6718833890"],"related_works":["https://openalex.org/W2019750744","https://openalex.org/W2613535449","https://openalex.org/W2051048385","https://openalex.org/W2104699544","https://openalex.org/W2027836115","https://openalex.org/W1995809631","https://openalex.org/W2162808514","https://openalex.org/W2546473172","https://openalex.org/W2099681566","https://openalex.org/W1999781939"],"abstract_inverted_index":{"For":[0],"high":[1,74],"voltage":[2],"application":[3],"at":[4,62],"a":[5,73,104],"fixed":[6],"inter-metal":[7],"distance,":[8],"dielectric":[9,94],"reliability":[10,108],"has":[11],"been":[12],"investigated":[13],"on":[14,19,101],"multi-layer":[15],"inter-level":[16,90],"interconnects,":[17],"focusing":[18],"conduction":[20,53],"mechanism":[21],"and":[22,68,79,117],"geometry":[23],"effect.":[24],"From":[25],"Vramp":[26],"(voltage-ramp-to-breakdown)":[27],"tests,":[28],"Vbd":[29],"is":[30,45],"found":[31],"to":[32,40,47,50,76],"be":[33,48,111],"4-5%":[34],"lower":[35],"with":[36,96],"positive":[37],"bias":[38,60,75,114],"applied":[39],"the":[41,51,77,87],"bottom":[42,78],"metal,":[43],"which":[44],"believed":[46],"due":[49],"polarity-dependent":[52],"mechanism.":[54],"IV":[55],"characteristics":[56],"of":[57,89],"two":[58],"different":[59],"configurations":[61],"various":[63],"temperatures":[64],"suggest":[65],"that":[66],"Poole-Frenkel":[67],"Fowler-Nordheim,":[69],"respectively,":[70],"dominates":[71],"for":[72,106],"top":[80],"electrodes.":[81],"In":[82],"addition,":[83],"metal":[84],"density":[85],"affects":[86],"lifetime":[88],"TDDB":[91],"(time":[92],"dependent":[93],"breakdown)":[95],"Poisson":[97],"area":[98],"scaling.":[99],"Based":[100],"our":[102],"studies,":[103],"guideline":[105],"additional":[107],"margin":[109],"can":[110],"proposed":[112],"by":[113],"polarity":[115],"restriction":[116],"layout":[118],"design":[119],"optimization.":[120]},"counts_by_year":[{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}