{"id":"https://openalex.org/W4376606661","doi":"https://doi.org/10.1109/irps48203.2023.10117896","title":"Soft Error Rate Predictions for Terrestrial Neutrons at the 3-nm Bulk FinFET Technology","display_name":"Soft Error Rate Predictions for Terrestrial Neutrons at the 3-nm Bulk FinFET Technology","publication_year":2023,"publication_date":"2023-03-01","ids":{"openalex":"https://openalex.org/W4376606661","doi":"https://doi.org/10.1109/irps48203.2023.10117896"},"language":"en","primary_location":{"id":"doi:10.1109/irps48203.2023.10117896","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48203.2023.10117896","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5015226951","display_name":"Yoni Xiong","orcid":"https://orcid.org/0000-0002-3635-7429"},"institutions":[{"id":"https://openalex.org/I200719446","display_name":"Vanderbilt University","ror":"https://ror.org/02vm5rt34","country_code":"US","type":"education","lineage":["https://openalex.org/I200719446"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Yoni Xiong","raw_affiliation_strings":["Vanderbilt University,Nashville,TN,USA","Vanderbilt University, Nashville, TN, USA"],"affiliations":[{"raw_affiliation_string":"Vanderbilt University,Nashville,TN,USA","institution_ids":["https://openalex.org/I200719446"]},{"raw_affiliation_string":"Vanderbilt University, Nashville, TN, USA","institution_ids":["https://openalex.org/I200719446"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044181817","display_name":"Yueh Chiang","orcid":"https://orcid.org/0000-0001-8643-1116"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yueh Chiang","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company,Hsinchu,Taiwan","Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005276432","display_name":"Nicholas J. Pieper","orcid":"https://orcid.org/0000-0003-4968-7029"},"institutions":[{"id":"https://openalex.org/I200719446","display_name":"Vanderbilt University","ror":"https://ror.org/02vm5rt34","country_code":"US","type":"education","lineage":["https://openalex.org/I200719446"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Nicholas J. Pieper","raw_affiliation_strings":["Vanderbilt University,Nashville,TN,USA","Vanderbilt University, Nashville, TN, USA"],"affiliations":[{"raw_affiliation_string":"Vanderbilt University,Nashville,TN,USA","institution_ids":["https://openalex.org/I200719446"]},{"raw_affiliation_string":"Vanderbilt University, Nashville, TN, USA","institution_ids":["https://openalex.org/I200719446"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006376684","display_name":"Dennis R. Ball","orcid":"https://orcid.org/0000-0003-0411-1835"},"institutions":[{"id":"https://openalex.org/I200719446","display_name":"Vanderbilt University","ror":"https://ror.org/02vm5rt34","country_code":"US","type":"education","lineage":["https://openalex.org/I200719446"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dennis R. Ball","raw_affiliation_strings":["Vanderbilt University,Nashville,TN,USA","Vanderbilt University, Nashville, TN, USA"],"affiliations":[{"raw_affiliation_string":"Vanderbilt University,Nashville,TN,USA","institution_ids":["https://openalex.org/I200719446"]},{"raw_affiliation_string":"Vanderbilt University, Nashville, TN, USA","institution_ids":["https://openalex.org/I200719446"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5090534631","display_name":"B. L. Bhuva","orcid":"https://orcid.org/0000-0002-2171-100X"},"institutions":[{"id":"https://openalex.org/I200719446","display_name":"Vanderbilt University","ror":"https://ror.org/02vm5rt34","country_code":"US","type":"education","lineage":["https://openalex.org/I200719446"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Bharat L. Bhuva","raw_affiliation_strings":["Vanderbilt University,Nashville,TN,USA","Vanderbilt University, Nashville, TN, USA"],"affiliations":[{"raw_affiliation_string":"Vanderbilt University,Nashville,TN,USA","institution_ids":["https://openalex.org/I200719446"]},{"raw_affiliation_string":"Vanderbilt University, Nashville, TN, USA","institution_ids":["https://openalex.org/I200719446"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5015226951"],"corresponding_institution_ids":["https://openalex.org/I200719446"],"apc_list":null,"apc_paid":null,"fwci":0.4016,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.58631733,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/soft-error","display_name":"Soft error","score":0.910861074924469},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.6696906089782715},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6058521270751953},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5440496802330017},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.5403945446014404},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4804086983203888},{"id":"https://openalex.org/keywords/neutron","display_name":"Neutron","score":0.47234785556793213},{"id":"https://openalex.org/keywords/word-error-rate","display_name":"Word error rate","score":0.46365246176719666},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42365872859954834},{"id":"https://openalex.org/keywords/event","display_name":"Event (particle physics)","score":0.4226500689983368},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3396545648574829},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.32246309518814087},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.24017974734306335},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.21670454740524292},{"id":"https://openalex.org/keywords/nuclear-physics","display_name":"Nuclear physics","score":0.1366577446460724},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11672279238700867},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.07171079516410828}],"concepts":[{"id":"https://openalex.org/C154474529","wikidata":"https://www.wikidata.org/wiki/Q1658917","display_name":"Soft error","level":2,"score":0.910861074924469},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.6696906089782715},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6058521270751953},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5440496802330017},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.5403945446014404},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4804086983203888},{"id":"https://openalex.org/C152568617","wikidata":"https://www.wikidata.org/wiki/Q2348","display_name":"Neutron","level":2,"score":0.47234785556793213},{"id":"https://openalex.org/C40969351","wikidata":"https://www.wikidata.org/wiki/Q3516228","display_name":"Word error rate","level":2,"score":0.46365246176719666},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42365872859954834},{"id":"https://openalex.org/C2779662365","wikidata":"https://www.wikidata.org/wiki/Q5416694","display_name":"Event (particle physics)","level":2,"score":0.4226500689983368},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3396545648574829},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.32246309518814087},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.24017974734306335},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.21670454740524292},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.1366577446460724},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11672279238700867},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.07171079516410828},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48203.2023.10117896","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48203.2023.10117896","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.4099999964237213}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1500230652","https://openalex.org/W1559826639","https://openalex.org/W1624911842","https://openalex.org/W1992531681","https://openalex.org/W2072397237","https://openalex.org/W2128881154","https://openalex.org/W2313981178","https://openalex.org/W2321543641","https://openalex.org/W2325092268","https://openalex.org/W2535424311","https://openalex.org/W2560368994","https://openalex.org/W2769280674","https://openalex.org/W2781306629","https://openalex.org/W2911467114","https://openalex.org/W2945205391","https://openalex.org/W2948702813","https://openalex.org/W3013683757","https://openalex.org/W3040320225","https://openalex.org/W3118958636","https://openalex.org/W3119773381","https://openalex.org/W3157303364","https://openalex.org/W4225309503"],"related_works":["https://openalex.org/W2041615232","https://openalex.org/W2167002145","https://openalex.org/W2149032943","https://openalex.org/W2106281713","https://openalex.org/W2154081718","https://openalex.org/W1544140237","https://openalex.org/W1599771994","https://openalex.org/W3149410719","https://openalex.org/W2108400598","https://openalex.org/W2161109877"],"abstract_inverted_index":{"Soft":[0],"error":[1],"rates":[2],"are":[3,35],"predicted":[4],"for":[5],"the":[6,20,41],"3-nm":[7,45],"bulk":[8,25,46],"FinFET":[9,26,47],"technology":[10],"node":[11],"using":[12],"layout-informed":[13],"Geant4":[14],"simulations":[15],"and":[16,23,31,44],"experimental":[17],"data":[18],"from":[19],"previous":[21],"7-nm":[22],"5-nm":[24],"nodes.":[27,48],"Single-event":[28],"hit":[29],"current":[30],"voltage":[32],"transient":[33],"characteristics":[34],"analyzed":[36],"with":[37],"literature-based":[38],"models":[39],"at":[40],"7-nm,":[42],"5-nm,":[43]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1}],"updated_date":"2025-12-21T01:58:51.020947","created_date":"2025-10-10T00:00:00"}