{"id":"https://openalex.org/W4376606652","doi":"https://doi.org/10.1109/irps48203.2023.10117889","title":"Development and Product Reliability Characterization of Advanced High Speed 14nm DDR5 DRAM with On-die ECC","display_name":"Development and Product Reliability Characterization of Advanced High Speed 14nm DDR5 DRAM with On-die ECC","publication_year":2023,"publication_date":"2023-03-01","ids":{"openalex":"https://openalex.org/W4376606652","doi":"https://doi.org/10.1109/irps48203.2023.10117889"},"language":"en","primary_location":{"id":"doi:10.1109/irps48203.2023.10117889","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48203.2023.10117889","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110253387","display_name":"S. Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"S. Lee","raw_affiliation_strings":["Samsung Electronics,Memory Division,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Memory Division,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012627867","display_name":"N-H Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"N-H Lee","raw_affiliation_strings":["Samsung Electronics,Memory Division,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Memory Division,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037203955","display_name":"KW. Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"KW. Lee","raw_affiliation_strings":["Samsung Electronics,Memory Division,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Memory Division,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110910238","display_name":"J.Y. Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"JH. Kim","raw_affiliation_strings":["Samsung Electronics,Memory Division,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Memory Division,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112915940","display_name":"JH. Jin","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"JH. Jin","raw_affiliation_strings":["Samsung Electronics,Memory Division,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Memory Division,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110975542","display_name":"YS. Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"YS. Lee","raw_affiliation_strings":["Samsung Electronics,Memory Division,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Memory Division,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054060744","display_name":"YC. Hwang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"YC Hwang","raw_affiliation_strings":["Samsung Electronics,Memory Division,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Memory Division,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080756118","display_name":"Hyoung Seop Kim","orcid":"https://orcid.org/0000-0002-3155-583X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"HS. Kim","raw_affiliation_strings":["Samsung Electronics,Memory Division,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Memory Division,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5010124316","display_name":"Sangwoo Pae","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. Pae","raw_affiliation_strings":["Samsung Electronics,Memory Division,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Memory Division,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5110253387"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.8016,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.71135114,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.8661608099937439},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7070564031600952},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.5545908212661743},{"id":"https://openalex.org/keywords/die","display_name":"Die (integrated circuit)","score":0.5281638503074646},{"id":"https://openalex.org/keywords/characterization","display_name":"Characterization (materials science)","score":0.4693969786167145},{"id":"https://openalex.org/keywords/code","display_name":"Code (set theory)","score":0.43966230750083923},{"id":"https://openalex.org/keywords/failure-rate","display_name":"Failure rate","score":0.42142346501350403},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4144382178783417},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3209246098995209},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.30885085463523865},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.27934810519218445},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.22792115807533264},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.22376874089241028},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.13037404417991638},{"id":"https://openalex.org/keywords/programming-language","display_name":"Programming language","score":0.11452481150627136}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.8661608099937439},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7070564031600952},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.5545908212661743},{"id":"https://openalex.org/C111106434","wikidata":"https://www.wikidata.org/wiki/Q1072430","display_name":"Die (integrated circuit)","level":2,"score":0.5281638503074646},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.4693969786167145},{"id":"https://openalex.org/C2776760102","wikidata":"https://www.wikidata.org/wiki/Q5139990","display_name":"Code (set theory)","level":3,"score":0.43966230750083923},{"id":"https://openalex.org/C163164238","wikidata":"https://www.wikidata.org/wiki/Q2737027","display_name":"Failure rate","level":2,"score":0.42142346501350403},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4144382178783417},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3209246098995209},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.30885085463523865},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27934810519218445},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.22792115807533264},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.22376874089241028},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.13037404417991638},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.11452481150627136},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C177264268","wikidata":"https://www.wikidata.org/wiki/Q1514741","display_name":"Set (abstract data type)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48203.2023.10117889","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48203.2023.10117889","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2041424982","https://openalex.org/W2612114356","https://openalex.org/W3157392844","https://openalex.org/W4225993920","https://openalex.org/W4226094037","https://openalex.org/W4286571906"],"related_works":["https://openalex.org/W3120961607","https://openalex.org/W4401568740","https://openalex.org/W2098207691","https://openalex.org/W3148568549","https://openalex.org/W1648516568","https://openalex.org/W361036515","https://openalex.org/W2269474412","https://openalex.org/W4386903460","https://openalex.org/W4211178602","https://openalex.org/W2433923775"],"abstract_inverted_index":{"The":[0,37,50,73,98],"reliability":[1,24],"characterization":[2],"of":[3,25,34,48,77,84],"fabricated":[4],"14nm":[5,100],"DDR5":[6,101],"DRAMs":[7,102],"with":[8],"On-die":[9],"Error":[10],"Correction":[11],"Code":[12],"(ECC)":[13],"and":[14,27,88,93,111,115],"EUV":[15],"process":[16,80],"is":[17],"presented":[18,99],"for":[19,107,117],"the":[20,55,82,85,108,118],"first":[21],"time.":[22],"Intrinsic":[23],"FEOL":[26],"BEOL":[28],"WLR":[29],"showed":[30],"well":[31,104],"above":[32],"10yrs":[33],"lifetime,":[35],"125\u00b0C.":[36],"products":[38],"demonstrated":[39],"no":[40],"fails":[41],"in":[42,105],"high":[43],"temperature":[44],"operating":[45],"lifetime":[46],"(HTOL)":[47],"1000hrs.":[49],"On-Die":[51],"ECC":[52],"design":[53],"improved":[54],"single":[56],"bit":[57],"error":[58],"rate":[59],"by":[60],"<tex":[61,67],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[62,68],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\boldsymbol{10^{-6}}$</tex>":[63],"times":[64],"(refresh":[65],"time":[66],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\boldsymbol{":[69],"&gt;":[70],"4\\mathrm{x}}$</tex>":[71],").":[72],"failure":[74],"rate,":[75],"ppm":[76],"manufacturing":[78],"burn-in":[79],"confirmed":[81],"healthiness":[83],"baseline":[86],"material":[87],"also":[89],"effectively":[90],"screen":[91],"out":[92],"monitor":[94],"any":[95],"random":[96],"defects.":[97],"are":[103],"production":[106],"PC":[109],"segments":[110],"have":[112],"been":[113],"shipping":[114],"qualified":[116],"Server":[119],"segments.":[120]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":4}],"updated_date":"2026-03-06T13:50:29.536080","created_date":"2025-10-10T00:00:00"}