{"id":"https://openalex.org/W3157764291","doi":"https://doi.org/10.1109/irps46558.2021.9405186","title":"Ultrathin Ferroelectricity and Its Application in Advanced Logic and Memory Devices","display_name":"Ultrathin Ferroelectricity and Its Application in Advanced Logic and Memory Devices","publication_year":2021,"publication_date":"2021-03-01","ids":{"openalex":"https://openalex.org/W3157764291","doi":"https://doi.org/10.1109/irps46558.2021.9405186","mag":"3157764291"},"language":"en","primary_location":{"id":"doi:10.1109/irps46558.2021.9405186","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405186","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5078295678","display_name":"Sayeef Salahuddin","orcid":"https://orcid.org/0000-0002-0315-2208"},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Sayeef Salahuddin","raw_affiliation_strings":["Electrical Engineering and Computer Sciences, University of California, Berkeley, CA"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering and Computer Sciences, University of California, Berkeley, CA","institution_ids":["https://openalex.org/I95457486"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5078295678"],"corresponding_institution_ids":["https://openalex.org/I95457486"],"apc_list":null,"apc_paid":null,"fwci":0.3008,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.54714446,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.9973999857902527,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.996999979019165,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.9366511106491089},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.6588418483734131},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6229222416877747},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5097257494926453},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.48202717304229736},{"id":"https://openalex.org/keywords/bottleneck","display_name":"Bottleneck","score":0.4596938192844391},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.35264885425567627},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.31239932775497437},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.26062333583831787},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13231593370437622},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10572335124015808},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.07768905162811279}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.9366511106491089},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6588418483734131},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6229222416877747},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5097257494926453},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48202717304229736},{"id":"https://openalex.org/C2780513914","wikidata":"https://www.wikidata.org/wiki/Q18210350","display_name":"Bottleneck","level":2,"score":0.4596938192844391},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.35264885425567627},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.31239932775497437},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.26062333583831787},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13231593370437622},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10572335124015808},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.07768905162811279}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps46558.2021.9405186","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405186","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1625170149","https://openalex.org/W1989081944","https://openalex.org/W2001761237","https://openalex.org/W2016106189","https://openalex.org/W2050002217","https://openalex.org/W2056097598","https://openalex.org/W2073573363","https://openalex.org/W2091943572","https://openalex.org/W2125580171","https://openalex.org/W2907480908","https://openalex.org/W2940499433","https://openalex.org/W3020220880","https://openalex.org/W3123416183","https://openalex.org/W6789094841"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2595172197","https://openalex.org/W2084856301","https://openalex.org/W2127970246","https://openalex.org/W2885125400","https://openalex.org/W1989889224","https://openalex.org/W4382618745","https://openalex.org/W1973775000","https://openalex.org/W2748922771","https://openalex.org/W1987128138"],"abstract_inverted_index":{"Compared":[0],"to":[1,22,53],"archetypical":[2],"perovskites,":[3,42],"HfO":[4,68,143],"<sub":[5,69,144],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[6,70,145],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[7,71,146],"based":[8,147],"ferroelectric":[9,24,116],"materials":[10,36],"are":[11],"process-compatible":[12],"with":[13,100,112],"advanced":[14,127,158],"CMOS":[15],"transistors.":[16,128],"As":[17],"a":[18,87,140],"result,":[19],"they":[20],"promise":[21],"bring":[23],"technologies":[25],"into":[26],"widespread":[27],"applications.":[28],"At":[29],"the":[30,43,48,76,119,150,156],"same":[31,120],"time,":[32],"ferroelectricity":[33,66,81],"in":[34,67,72,86,125,155],"these":[35],"is":[37,50,92,138],"also":[38],"different.":[39],"In":[40,104],"conventional":[41,58,134],"polarization":[44],"becomes":[45],"weaker":[46],"as":[47,75],"thickness":[49,77,121,136],"decreased":[51],"due":[52],"`size":[54],"effects'.":[55],"Balking":[56],"this":[57],"trend,":[59],"our":[60],"recent":[61],"work":[62],"has":[63],"shown":[64],"that":[65],"fact":[73],"enhances":[74],"goes":[78],"down.":[79],"The":[80],"can":[82],"be":[83],"demonstrated":[84,111],"even":[85],"1":[88,101],"nm":[89,102],"film,":[90],"which":[91],"just":[93,113],"two-unit":[94],"cells!":[95],"Ferroelectric":[96],"tunnel":[97],"junction":[98],"results":[99,130],"ferroelectric.":[103],"addition,":[105],"Negative":[106],"Capacitance":[107],"transistors":[108],"have":[109],"been":[110],"18A":[114],"thick":[115],"material":[117],"-":[118],"of":[122],"high-dielectric":[123],"used":[124],"today's":[126],"These":[129],"demonstrate":[131],"that,":[132],"unlike":[133],"ferroelectrics,":[135,148],"scaling":[137],"not":[139],"bottleneck":[141],"for":[142,152],"paving":[149],"way":[151],"their":[153],"integration":[154],"most":[157],"logic":[159],"and":[160],"memory":[161],"devices.":[162]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}