{"id":"https://openalex.org/W3159070816","doi":"https://doi.org/10.1109/irps46558.2021.9405180","title":"Space Radiation Effects on SiC Power Device Reliability","display_name":"Space Radiation Effects on SiC Power Device Reliability","publication_year":2021,"publication_date":"2021-03-01","ids":{"openalex":"https://openalex.org/W3159070816","doi":"https://doi.org/10.1109/irps46558.2021.9405180","mag":"3159070816"},"language":"en","primary_location":{"id":"doi:10.1109/irps46558.2021.9405180","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405180","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5024057086","display_name":"Jean\u2010Marie Lauenstein","orcid":"https://orcid.org/0000-0003-3703-8152"},"institutions":[{"id":"https://openalex.org/I1306266525","display_name":"Goddard Space Flight Center","ror":"https://ror.org/0171mag52","country_code":"US","type":"facility","lineage":["https://openalex.org/I1306266525","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Jean-Marie Lauenstein","raw_affiliation_strings":["Flight Data Systems and Radiation Effects Branch, NASA Goddard Space Flight Center,Greenbelt,MD,USA","Flight Data Systems and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt, MD, USA"],"affiliations":[{"raw_affiliation_string":"Flight Data Systems and Radiation Effects Branch, NASA Goddard Space Flight Center,Greenbelt,MD,USA","institution_ids":["https://openalex.org/I1306266525"]},{"raw_affiliation_string":"Flight Data Systems and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt, MD, USA","institution_ids":["https://openalex.org/I1306266525"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075045455","display_name":"Megan C. Casey","orcid":"https://orcid.org/0000-0002-1282-4598"},"institutions":[{"id":"https://openalex.org/I1306266525","display_name":"Goddard Space Flight Center","ror":"https://ror.org/0171mag52","country_code":"US","type":"facility","lineage":["https://openalex.org/I1306266525","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Megan C. Casey","raw_affiliation_strings":["Flight Data Systems and Radiation Effects Branch, NASA Goddard Space Flight Center,Greenbelt,MD,USA","Flight Data Systems and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt, MD, USA"],"affiliations":[{"raw_affiliation_string":"Flight Data Systems and Radiation Effects Branch, NASA Goddard Space Flight Center,Greenbelt,MD,USA","institution_ids":["https://openalex.org/I1306266525"]},{"raw_affiliation_string":"Flight Data Systems and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt, MD, USA","institution_ids":["https://openalex.org/I1306266525"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070393942","display_name":"Ray Ladbury","orcid":"https://orcid.org/0000-0002-5674-4557"},"institutions":[{"id":"https://openalex.org/I1306266525","display_name":"Goddard Space Flight Center","ror":"https://ror.org/0171mag52","country_code":"US","type":"facility","lineage":["https://openalex.org/I1306266525","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ray L. Ladbury","raw_affiliation_strings":["Flight Data Systems and Radiation Effects Branch, NASA Goddard Space Flight Center,Greenbelt,MD,USA","Flight Data Systems and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt, MD, USA"],"affiliations":[{"raw_affiliation_string":"Flight Data Systems and Radiation Effects Branch, NASA Goddard Space Flight Center,Greenbelt,MD,USA","institution_ids":["https://openalex.org/I1306266525"]},{"raw_affiliation_string":"Flight Data Systems and Radiation Effects Branch, NASA Goddard Space Flight Center, Greenbelt, MD, USA","institution_ids":["https://openalex.org/I1306266525"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103051661","display_name":"Hak Kim","orcid":"https://orcid.org/0000-0002-4781-5210"},"institutions":[{"id":"https://openalex.org/I4210144891","display_name":"Science Systems and Applications (United States)","ror":"https://ror.org/03xec1444","country_code":"US","type":"company","lineage":["https://openalex.org/I4210144891"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hak S. Kim","raw_affiliation_strings":["Science Systems and Applications, Inc. (work performed for NASA GSFC),Lanham,MD,USA","Science Systems and Applications, Inc. (work performed for NASA GSFC), Lanham, MD, USA"],"affiliations":[{"raw_affiliation_string":"Science Systems and Applications, Inc. (work performed for NASA GSFC),Lanham,MD,USA","institution_ids":["https://openalex.org/I4210144891"]},{"raw_affiliation_string":"Science Systems and Applications, Inc. (work performed for NASA GSFC), Lanham, MD, USA","institution_ids":["https://openalex.org/I4210144891"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103728015","display_name":"Anthony M. Phan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210144891","display_name":"Science Systems and Applications (United States)","ror":"https://ror.org/03xec1444","country_code":"US","type":"company","lineage":["https://openalex.org/I4210144891"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Anthony M. Phan","raw_affiliation_strings":["Science Systems and Applications, Inc. (work performed for NASA GSFC),Lanham,MD,USA","Science Systems and Applications, Inc. (work performed for NASA GSFC), Lanham, MD, USA"],"affiliations":[{"raw_affiliation_string":"Science Systems and Applications, Inc. (work performed for NASA GSFC),Lanham,MD,USA","institution_ids":["https://openalex.org/I4210144891"]},{"raw_affiliation_string":"Science Systems and Applications, Inc. (work performed for NASA GSFC), Lanham, MD, USA","institution_ids":["https://openalex.org/I4210144891"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5053119135","display_name":"Alyson D. Topper","orcid":null},"institutions":[{"id":"https://openalex.org/I4210144891","display_name":"Science Systems and Applications (United States)","ror":"https://ror.org/03xec1444","country_code":"US","type":"company","lineage":["https://openalex.org/I4210144891"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alyson D. Topper","raw_affiliation_strings":["Science Systems and Applications, Inc. (work performed for NASA GSFC),Lanham,MD,USA","Science Systems and Applications, Inc. (work performed for NASA GSFC), Lanham, MD, USA"],"affiliations":[{"raw_affiliation_string":"Science Systems and Applications, Inc. (work performed for NASA GSFC),Lanham,MD,USA","institution_ids":["https://openalex.org/I4210144891"]},{"raw_affiliation_string":"Science Systems and Applications, Inc. (work performed for NASA GSFC), Lanham, MD, USA","institution_ids":["https://openalex.org/I4210144891"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5024057086"],"corresponding_institution_ids":["https://openalex.org/I1306266525"],"apc_list":null,"apc_paid":null,"fwci":5.6908,"has_fulltext":false,"cited_by_count":92,"citation_normalized_percentile":{"value":0.96692888,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":95,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"8"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.6846773624420166},{"id":"https://openalex.org/keywords/spacecraft","display_name":"Spacecraft","score":0.6540364027023315},{"id":"https://openalex.org/keywords/power-cycling","display_name":"Power cycling","score":0.5586928725242615},{"id":"https://openalex.org/keywords/single-event-upset","display_name":"Single event upset","score":0.5244584083557129},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.47892770171165466},{"id":"https://openalex.org/keywords/radiation","display_name":"Radiation","score":0.4693357050418854},{"id":"https://openalex.org/keywords/radiation-hardening","display_name":"Radiation hardening","score":0.45793062448501587},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4565730392932892},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4436769187450409},{"id":"https://openalex.org/keywords/testability","display_name":"Testability","score":0.4274212419986725},{"id":"https://openalex.org/keywords/heavy-ion","display_name":"Heavy ion","score":0.4272368550300598},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.4247111678123474},{"id":"https://openalex.org/keywords/catastrophic-failure","display_name":"Catastrophic failure","score":0.4244171380996704},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.41410893201828003},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.4116281569004059},{"id":"https://openalex.org/keywords/nuclear-engineering","display_name":"Nuclear engineering","score":0.37673598527908325},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.35255324840545654},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.27211087942123413},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22246596217155457},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2142123579978943},{"id":"https://openalex.org/keywords/ion","display_name":"Ion","score":0.19925457239151},{"id":"https://openalex.org/keywords/aerospace-engineering","display_name":"Aerospace engineering","score":0.19075405597686768},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.18037989735603333},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1620844006538391},{"id":"https://openalex.org/keywords/detector","display_name":"Detector","score":0.1362433135509491},{"id":"https://openalex.org/keywords/nuclear-physics","display_name":"Nuclear physics","score":0.12010851502418518}],"concepts":[{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.6846773624420166},{"id":"https://openalex.org/C29829512","wikidata":"https://www.wikidata.org/wiki/Q40218","display_name":"Spacecraft","level":2,"score":0.6540364027023315},{"id":"https://openalex.org/C2777900271","wikidata":"https://www.wikidata.org/wiki/Q17105337","display_name":"Power cycling","level":4,"score":0.5586928725242615},{"id":"https://openalex.org/C2780073065","wikidata":"https://www.wikidata.org/wiki/Q1476733","display_name":"Single event upset","level":3,"score":0.5244584083557129},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.47892770171165466},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.4693357050418854},{"id":"https://openalex.org/C119349744","wikidata":"https://www.wikidata.org/wiki/Q3026015","display_name":"Radiation hardening","level":3,"score":0.45793062448501587},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4565730392932892},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4436769187450409},{"id":"https://openalex.org/C51234621","wikidata":"https://www.wikidata.org/wiki/Q2149495","display_name":"Testability","level":2,"score":0.4274212419986725},{"id":"https://openalex.org/C2988362075","wikidata":"https://www.wikidata.org/wiki/Q12416032","display_name":"Heavy ion","level":3,"score":0.4272368550300598},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.4247111678123474},{"id":"https://openalex.org/C112987892","wikidata":"https://www.wikidata.org/wiki/Q5051574","display_name":"Catastrophic failure","level":2,"score":0.4244171380996704},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.41410893201828003},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.4116281569004059},{"id":"https://openalex.org/C116915560","wikidata":"https://www.wikidata.org/wiki/Q83504","display_name":"Nuclear engineering","level":1,"score":0.37673598527908325},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.35255324840545654},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.27211087942123413},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22246596217155457},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2142123579978943},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.19925457239151},{"id":"https://openalex.org/C146978453","wikidata":"https://www.wikidata.org/wiki/Q3798668","display_name":"Aerospace engineering","level":1,"score":0.19075405597686768},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.18037989735603333},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1620844006538391},{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.1362433135509491},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.12010851502418518},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps46558.2021.9405180","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405180","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6200000047683716,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":42,"referenced_works":["https://openalex.org/W267840210","https://openalex.org/W1016516060","https://openalex.org/W1973637154","https://openalex.org/W1986882138","https://openalex.org/W1990866803","https://openalex.org/W1998370272","https://openalex.org/W2029025469","https://openalex.org/W2048841999","https://openalex.org/W2056511388","https://openalex.org/W2088226302","https://openalex.org/W2089813964","https://openalex.org/W2091797891","https://openalex.org/W2097271066","https://openalex.org/W2102178536","https://openalex.org/W2105352778","https://openalex.org/W2112890376","https://openalex.org/W2113893172","https://openalex.org/W2115521460","https://openalex.org/W2126962899","https://openalex.org/W2139227704","https://openalex.org/W2142175254","https://openalex.org/W2149961997","https://openalex.org/W2165637678","https://openalex.org/W2412780652","https://openalex.org/W2489452681","https://openalex.org/W2505507599","https://openalex.org/W2529894909","https://openalex.org/W2546442988","https://openalex.org/W2687191584","https://openalex.org/W2802284781","https://openalex.org/W2895540130","https://openalex.org/W2896792013","https://openalex.org/W2920715148","https://openalex.org/W2929805472","https://openalex.org/W2943508746","https://openalex.org/W2953045868","https://openalex.org/W2967405927","https://openalex.org/W3013371444","https://openalex.org/W3036805578","https://openalex.org/W4241070446","https://openalex.org/W4249903399","https://openalex.org/W6755353431"],"related_works":["https://openalex.org/W2899070267","https://openalex.org/W1971144063","https://openalex.org/W2099245758","https://openalex.org/W2737101607","https://openalex.org/W2765365005","https://openalex.org/W2030112294","https://openalex.org/W2060193918","https://openalex.org/W2132125643","https://openalex.org/W2100150400","https://openalex.org/W4231504553"],"abstract_inverted_index":{"Heavy-ion":[0],"radiation":[1,98,109],"can":[2],"result":[3],"in":[4,42],"silicon":[5,102],"carbide":[6,103],"power":[7,77,92,104],"device":[8],"degradation":[9],"and/or":[10],"catastrophic":[11],"failure.":[12],"Test":[13],"procedures":[14],"and":[15,36,79,90,108,136],"data":[16,73],"interpretation":[17],"must":[18,57],"consider":[19],"the":[20,43,61,115,128],"impact":[21],"that":[22,138],"heavy-ion":[23,71,97],"induced":[24],"off-state":[25,47],"leakage":[26,48],"current":[27],"increases":[28],"will":[29,139],"have":[30],"on":[31,96],"subsequent":[32],"single-event":[33,55,84],"effect":[34],"susceptibility":[35],"testability.":[37],"On":[38],"orbit,":[39],"reliable":[40],"performance":[41],"presence":[44],"of":[45,70,117,134],"increased":[46],"currents":[49],"due":[50],"to":[51,83,122],"cumulative":[52],"ion-induced":[53],"non-catastrophic":[54],"effects":[56,85],"be":[58],"assured":[59],"over":[60],"mission":[62],"lifetime.":[63],"This":[64],"work":[65],"presents":[66],"a":[67,131],"large":[68],"body":[69],"test":[72,99],"for":[74,101],"different":[75],"diode,":[76],"MOSFET,":[78],"JFET":[80],"devices.":[81,93],"Susceptibility":[82],"is":[86,112],"compared":[87],"between":[88],"SiC":[89],"Si":[91],"Initial":[94],"recommendations":[95],"methods":[100],"devices":[105],"are":[106],"made":[107],"hardness":[110],"assurance":[111],"discussed":[113],"with":[114],"goal":[116],"moving":[118],"one":[119],"step":[120],"closer":[121],"reliably":[123],"getting":[124],"this":[125],"technology":[126],"off":[127],"ground":[129],"into":[130],"broad":[132],"array":[133],"spacecraft":[135],"instruments":[137],"benefit":[140],"from":[141],"its":[142],"unique":[143],"capabilities.":[144]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":33},{"year":2024,"cited_by_count":22},{"year":2023,"cited_by_count":21},{"year":2022,"cited_by_count":10},{"year":2021,"cited_by_count":3}],"updated_date":"2026-04-18T07:56:08.524223","created_date":"2025-10-10T00:00:00"}