{"id":"https://openalex.org/W2944963837","doi":"https://doi.org/10.1109/irps.2019.8720519","title":"Comparative Study of TDDB Models on BEOL Interconnects for Sub-20 nm Spacings","display_name":"Comparative Study of TDDB Models on BEOL Interconnects for Sub-20 nm Spacings","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2944963837","doi":"https://doi.org/10.1109/irps.2019.8720519","mag":"2944963837"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720519","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720519","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5014586797","display_name":"Niaz Mahmud","orcid":null},"institutions":[{"id":"https://openalex.org/I90965887","display_name":"SUNY Polytechnic Institute","ror":"https://ror.org/000fxgx19","country_code":"US","type":"education","lineage":["https://openalex.org/I90965887"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Niaz Mahmud","raw_affiliation_strings":["College of Nanoscale Science and Engineering (CNSE), SUNY Polytechnic Institute, Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"College of Nanoscale Science and Engineering (CNSE), SUNY Polytechnic Institute, Albany, NY, USA","institution_ids":["https://openalex.org/I90965887"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108834689","display_name":"Nabihah Azhari","orcid":"https://orcid.org/0009-0002-6651-252X"},"institutions":[{"id":"https://openalex.org/I90965887","display_name":"SUNY Polytechnic Institute","ror":"https://ror.org/000fxgx19","country_code":"US","type":"education","lineage":["https://openalex.org/I90965887"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Nabihah Azhari","raw_affiliation_strings":["College of Nanoscale Science and Engineering (CNSE), SUNY Polytechnic Institute, Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"College of Nanoscale Science and Engineering (CNSE), SUNY Polytechnic Institute, Albany, NY, USA","institution_ids":["https://openalex.org/I90965887"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102795012","display_name":"J. R. Lloyd","orcid":"https://orcid.org/0000-0001-5367-7371"},"institutions":[{"id":"https://openalex.org/I90965887","display_name":"SUNY Polytechnic Institute","ror":"https://ror.org/000fxgx19","country_code":"US","type":"education","lineage":["https://openalex.org/I90965887"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. R. Lloyd","raw_affiliation_strings":["College of Nanoscale Science and Engineering (CNSE), SUNY Polytechnic Institute, Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"College of Nanoscale Science and Engineering (CNSE), SUNY Polytechnic Institute, Albany, NY, USA","institution_ids":["https://openalex.org/I90965887"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5014586797"],"corresponding_institution_ids":["https://openalex.org/I90965887"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0336922,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9918000102043152,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.9372082948684692},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7680444717407227},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.6934599876403809},{"id":"https://openalex.org/keywords/back-end-of-line","display_name":"Back end of line","score":0.6519914865493774},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5606943368911743},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.448910117149353},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.401866614818573},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3535807728767395},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3129838705062866},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2320612370967865},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.11926418542861938},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08670240640640259},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08373615145683289},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.06870463490486145}],"concepts":[{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.9372082948684692},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7680444717407227},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.6934599876403809},{"id":"https://openalex.org/C2776628375","wikidata":"https://www.wikidata.org/wiki/Q4839229","display_name":"Back end of line","level":3,"score":0.6519914865493774},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5606943368911743},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.448910117149353},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.401866614818573},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3535807728767395},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3129838705062866},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2320612370967865},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.11926418542861938},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08670240640640259},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08373615145683289},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.06870463490486145}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720519","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720519","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5600000023841858}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1490567035","https://openalex.org/W1935945084","https://openalex.org/W1973685869","https://openalex.org/W2035802984","https://openalex.org/W2075697254","https://openalex.org/W2117749367","https://openalex.org/W2155586222","https://openalex.org/W2156373378","https://openalex.org/W2166943942","https://openalex.org/W2533106020","https://openalex.org/W2541412708"],"related_works":["https://openalex.org/W2019750744","https://openalex.org/W2519501658","https://openalex.org/W2084379018","https://openalex.org/W2085461794","https://openalex.org/W2612336586","https://openalex.org/W2159739850","https://openalex.org/W2130126544","https://openalex.org/W2008398665","https://openalex.org/W2115486002","https://openalex.org/W2601132872"],"abstract_inverted_index":{"Time":[0],"Dependent":[1],"Dielectric":[2],"Breakdown":[3],"(TDDB)":[4],"data":[5],"on":[6],"Back-End":[7],"of":[8,35],"Line":[9],"(BEOL)":[10],"inter-metal":[11],"dielectric":[12],"comb-serpentine":[13],"structures":[14],"having":[15],"a":[16,33,46],"17":[17],"-nm":[18],"measured":[19],"minimum":[20],"spacing":[21],"in":[22],"fields":[23],"varied":[24],"from":[25],"1.3":[26],"MV/cm":[27,30],"to":[28,38],"5.3":[29],"and":[31],"as":[32],"function":[34],"temperature":[36,43],"(50\u00b0C":[37],"125\u00b0C)":[39],"were":[40,60],"analyzed.":[41],"The":[42],"study":[44],"suggests":[45],"decreasing":[47],"apparent":[48],"activation":[49],"energy":[50],"with":[51,62],"increasing":[52],"field.":[53],"In":[54],"addition,":[55],"several":[56],"TDDB":[57],"failure":[58],"models":[59],"compared,":[61],"the":[63,66,70],"lucky":[64],"electron,":[65],"power":[67],"law":[68],"&":[69],"\u221a{E":[71],"model":[72],"showing":[73],"good":[74],"fit.":[75]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}