{"id":"https://openalex.org/W2945148843","doi":"https://doi.org/10.1109/irps.2019.8720442","title":"Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery","display_name":"Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2945148843","doi":"https://doi.org/10.1109/irps.2019.8720442","mag":"2945148843"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720442","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720442","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5061819220","display_name":"Elnatan Mataev","orcid":"https://orcid.org/0000-0002-1429-4367"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Elnatan Mataev","raw_affiliation_strings":["IBM Systems, Hopewell Junction, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Systems, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036267166","display_name":"J. H. Stathis","orcid":"https://orcid.org/0000-0001-8340-2475"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"James Stathis","raw_affiliation_strings":["IBM Research, Yorktown Heights, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090403345","display_name":"Giuseppe La Rosa","orcid":"https://orcid.org/0000-0003-2714-3493"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Giuseppe La Rosa","raw_affiliation_strings":["IBM Systems, Hopewell Junction, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Systems, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5077091939","display_name":"B.P. Linder","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Barry P. Linder","raw_affiliation_strings":["IBM Systems, Hopewell Junction, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Systems, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5061819220"],"corresponding_institution_ids":["https://openalex.org/I1341412227"],"apc_list":null,"apc_paid":null,"fwci":0.3577,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.59755976,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.9190061092376709},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.669944167137146},{"id":"https://openalex.org/keywords/relaxation","display_name":"Relaxation (psychology)","score":0.643230140209198},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6381627917289734},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.6238346099853516},{"id":"https://openalex.org/keywords/stress-relaxation","display_name":"Stress relaxation","score":0.577070415019989},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.5742802619934082},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5250799059867859},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5140527486801147},{"id":"https://openalex.org/keywords/dc-bias","display_name":"DC bias","score":0.5062671899795532},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.3872451186180115},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.38104185461997986},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35207146406173706},{"id":"https://openalex.org/keywords/control-theory","display_name":"Control theory (sociology)","score":0.33701664209365845},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.33058661222457886},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3147459924221039},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.23248076438903809},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2312227487564087},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.13298124074935913},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11552861332893372},{"id":"https://openalex.org/keywords/psychology","display_name":"Psychology","score":0.08293396234512329},{"id":"https://openalex.org/keywords/creep","display_name":"Creep","score":0.07286480069160461}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.9190061092376709},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.669944167137146},{"id":"https://openalex.org/C2776029896","wikidata":"https://www.wikidata.org/wiki/Q3935810","display_name":"Relaxation (psychology)","level":2,"score":0.643230140209198},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6381627917289734},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.6238346099853516},{"id":"https://openalex.org/C202974441","wikidata":"https://www.wikidata.org/wiki/Q2576844","display_name":"Stress relaxation","level":3,"score":0.577070415019989},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.5742802619934082},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5250799059867859},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5140527486801147},{"id":"https://openalex.org/C88682704","wikidata":"https://www.wikidata.org/wiki/Q2907415","display_name":"DC bias","level":3,"score":0.5062671899795532},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.3872451186180115},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.38104185461997986},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35207146406173706},{"id":"https://openalex.org/C47446073","wikidata":"https://www.wikidata.org/wiki/Q5165890","display_name":"Control theory (sociology)","level":3,"score":0.33701664209365845},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33058661222457886},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3147459924221039},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.23248076438903809},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2312227487564087},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.13298124074935913},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11552861332893372},{"id":"https://openalex.org/C15744967","wikidata":"https://www.wikidata.org/wiki/Q9418","display_name":"Psychology","level":0,"score":0.08293396234512329},{"id":"https://openalex.org/C149912024","wikidata":"https://www.wikidata.org/wiki/Q462188","display_name":"Creep","level":2,"score":0.07286480069160461},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C2775924081","wikidata":"https://www.wikidata.org/wiki/Q55608371","display_name":"Control (management)","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C77805123","wikidata":"https://www.wikidata.org/wiki/Q161272","display_name":"Social psychology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720442","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720442","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.6600000262260437,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1968759897","https://openalex.org/W1986415905","https://openalex.org/W1990785435","https://openalex.org/W2009110145","https://openalex.org/W2041598550","https://openalex.org/W2108661028","https://openalex.org/W2140952946","https://openalex.org/W2147381694","https://openalex.org/W2164625588"],"related_works":["https://openalex.org/W2944990515","https://openalex.org/W2942040471","https://openalex.org/W2370519257","https://openalex.org/W2028220610","https://openalex.org/W2573726612","https://openalex.org/W2088008649","https://openalex.org/W2166033074","https://openalex.org/W2036808971","https://openalex.org/W2571059022","https://openalex.org/W1968460025"],"abstract_inverted_index":{"Negative":[0],"Bias":[1],"Temperature":[2],"Instability":[3],"(NBTI)":[4],"remains":[5],"one":[6],"of":[7,50,117],"the":[8,47,55,64,67,78,98,106,122,127],"leading":[9],"degradation":[10],"mechanisms":[11],"in":[12],"CMOS":[13],"devices.":[14],"Long":[15],"term":[16],"NBTI":[17,37,129],"recovery":[18,45,56,80],"at":[19,26,46,91],"low-power":[20],"use":[21],"conditions":[22,125],"following":[23],"a":[24,27],"stress":[25,43,68,119],"higher":[28],"voltage,":[29],"high-performance":[30],"mode,":[31],"is":[32,39,60,109],"reported.":[33],"A":[34,102],"new":[35],"phenomenological":[36],"model":[38],"proposed,":[40],"incorporating":[41],"both":[42],"and":[44,69,120],"two":[48],"modes":[49],"operation.":[51],"We":[52,73],"show":[53,113],"that":[54,114],"rate":[57],"under":[58,83],"bias":[59,85,124],"linearly":[61],"proportional":[62],"to":[63,89],"difference":[65],"between":[66],"biased":[70],"relaxation":[71,86],"voltages.":[72],"further":[74],"reveal":[75],"that,":[76],"unlike":[77],"zero-bias":[79],"case,":[81],"devices":[82],"low-voltage":[84],"are":[87],"expected":[88],"re-degrade":[90],"longer":[92],"times,":[93],"which":[94],"may":[95],"be":[96],"beyond":[97],"typical":[99],"10-year":[100],"lifetime.":[101],"method":[103],"for":[104,115],"forecasting":[105],"re-degradation":[107],"time":[108],"proposed.":[110],"Finally,":[111],"we":[112],"combinations":[116],"AC/DC":[118],"relaxation,":[121],"latter":[123],"dictate":[126],"final":[128],"shift.":[130]},"counts_by_year":[{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}