{"id":"https://openalex.org/W2946261252","doi":"https://doi.org/10.1109/irps.2019.8720407","title":"Robust BEOL MIMCAP for Long and Controllable TDDB Lifetime","display_name":"Robust BEOL MIMCAP for Long and Controllable TDDB Lifetime","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2946261252","doi":"https://doi.org/10.1109/irps.2019.8720407","mag":"2946261252"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720407","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720407","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086023670","display_name":"Lili Cheng","orcid":"https://orcid.org/0000-0001-5544-0909"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Lili Cheng","raw_affiliation_strings":["GLOBALFOUNDRIES, Malta, NY, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100850067","display_name":"Seungman Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Seungman Choi","raw_affiliation_strings":["GLOBALFOUNDRIES, Malta, NY, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031422849","display_name":"Sean P. Ogden","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sean Ogden","raw_affiliation_strings":["GLOBALFOUNDRIES, Malta, NY, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110101214","display_name":"Teck Jung Tang","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Teck Jung Tang","raw_affiliation_strings":["GLOBALFOUNDRIES, Malta, NY, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5041498070","display_name":"Robert Fox","orcid":"https://orcid.org/0000-0002-0950-3865"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Robert Fox","raw_affiliation_strings":["GLOBALFOUNDRIES, Malta, NY, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5086023670"],"corresponding_institution_ids":["https://openalex.org/I35662394"],"apc_list":null,"apc_paid":null,"fwci":0.2385,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.53570083,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.8019108772277832},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.7539501190185547},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7418656349182129},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5441213846206665},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5225457549095154},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.48260509967803955},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4647480845451355},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.46381375193595886},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4294791519641876},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.32761770486831665},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18839234113693237},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.12514346837997437},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11878305673599243}],"concepts":[{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.8019108772277832},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.7539501190185547},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7418656349182129},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5441213846206665},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5225457549095154},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48260509967803955},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4647480845451355},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.46381375193595886},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4294791519641876},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.32761770486831665},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18839234113693237},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.12514346837997437},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11878305673599243},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720407","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720407","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8500000238418579,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1976842209","https://openalex.org/W1988330685","https://openalex.org/W2128266300","https://openalex.org/W2650525456"],"related_works":["https://openalex.org/W2099624314","https://openalex.org/W2392567938","https://openalex.org/W2106473374","https://openalex.org/W2311850564","https://openalex.org/W2108489988","https://openalex.org/W3160961382","https://openalex.org/W3134813975","https://openalex.org/W2111013026","https://openalex.org/W2033569201","https://openalex.org/W3201183165"],"abstract_inverted_index":{"As":[0],"operating":[1],"frequency":[2],"of":[3],"the":[4],"chips":[5],"keeps":[6],"increasing,":[7],"high":[8,23,58],"capacitance":[9,24,59],"density":[10,60],"MIMCap":[11,45,72],"is":[12,27],"needed":[13],"to":[14,29,70,82],"mitigate":[15],"voltage":[16,80],"droop":[17],"for":[18],"faster":[19],"current":[20],"injection.":[21],"With":[22],"density,":[25],"it":[26],"challenging":[28],"retain":[30],"low":[31,62],"leakage":[32],"and":[33,61],"long":[34],"reliability":[35],"lifetime.":[36],"In":[37,53],"this":[38,64],"work,":[39],"we":[40],"will":[41,66],"present":[42,67],"an":[43],"integrated":[44],"with":[46,73,79],"BEOL":[47],"process":[48],"which":[49],"has":[50],"robust":[51],"TDDB.":[52],"addition,":[54],"while":[55],"retaining":[56],"same":[57],"leakage,":[63],"work":[65],"a":[68],"method":[69],"fabricate":[71],"controlled":[74],"TDDB":[75],"lifetime,":[76],"providing":[77],"flexibility":[78],"applied":[81],"either":[83],"electrode.":[84]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}