{"id":"https://openalex.org/W2802914086","doi":"https://doi.org/10.1109/irps.2018.8353665","title":"Study of dynamic TDDB in scaled FinFET technologies","display_name":"Study of dynamic TDDB in scaled FinFET technologies","publication_year":2018,"publication_date":"2018-03-01","ids":{"openalex":"https://openalex.org/W2802914086","doi":"https://doi.org/10.1109/irps.2018.8353665","mag":"2802914086"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2018.8353665","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353665","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086311588","display_name":"K. Joshi","orcid":"https://orcid.org/0000-0002-8981-5219"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"K. Joshi","raw_affiliation_strings":["MTMQR, Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C"],"affiliations":[{"raw_affiliation_string":"MTMQR, Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109259566","display_name":"S. W. Chang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"S. W. Chang","raw_affiliation_strings":["MTMQR, Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C"],"affiliations":[{"raw_affiliation_string":"MTMQR, Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088267249","display_name":"Dongsheng Huang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"D. S. Huang","raw_affiliation_strings":["MTMQR, Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C"],"affiliations":[{"raw_affiliation_string":"MTMQR, Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053758634","display_name":"P. J. Liao","orcid":"https://orcid.org/0000-0002-5721-569X"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"P. J. Liao","raw_affiliation_strings":["MTMQR, Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C"],"affiliations":[{"raw_affiliation_string":"MTMQR, Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5054509797","display_name":"Y.-H. Lee","orcid":"https://orcid.org/0000-0003-3742-3296"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Y.-H. Lee","raw_affiliation_strings":["MTMQR, Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C"],"affiliations":[{"raw_affiliation_string":"MTMQR, Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C","institution_ids":["https://openalex.org/I4210120917"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5086311588"],"corresponding_institution_ids":["https://openalex.org/I4210120917"],"apc_list":null,"apc_paid":null,"fwci":0.2575,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.55556351,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"P","last_page":"GD.5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.9121058583259583},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.8578288555145264},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.7573337554931641},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.67820143699646},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.5879895687103271},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5693389773368835},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5278011560440063},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39954301714897156},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.36170005798339844},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3159550428390503},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1630251705646515},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15264639258384705},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.1521826684474945},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11220338940620422}],"concepts":[{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.9121058583259583},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.8578288555145264},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.7573337554931641},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.67820143699646},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.5879895687103271},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5693389773368835},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5278011560440063},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39954301714897156},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.36170005798339844},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3159550428390503},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1630251705646515},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15264639258384705},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.1521826684474945},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11220338940620422},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2018.8353665","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2018.8353665","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.550000011920929,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W2043440527","https://openalex.org/W2050540090","https://openalex.org/W2067141080","https://openalex.org/W2126010728","https://openalex.org/W2139269689","https://openalex.org/W2161426612","https://openalex.org/W2294174889","https://openalex.org/W2536803352","https://openalex.org/W2586048389","https://openalex.org/W2611419218","https://openalex.org/W2620797304","https://openalex.org/W2621167775","https://openalex.org/W4392693955","https://openalex.org/W6728740408"],"related_works":["https://openalex.org/W1742453416","https://openalex.org/W2552277894","https://openalex.org/W2730314563","https://openalex.org/W2101797444","https://openalex.org/W2121391590","https://openalex.org/W1984929585","https://openalex.org/W2131979531","https://openalex.org/W1955395711","https://openalex.org/W2566022972","https://openalex.org/W2120421222"],"abstract_inverted_index":{"Impact":[0],"of":[1,28,33],"self-heating":[2],"effect":[3],"(SHE)":[4],"has":[5,72],"been":[6],"studied":[7],"on":[8,38],"FinFET":[9],"devices":[10],"under":[11,21],"dynamic":[12],"stress.":[13,51],"A":[14],"large":[15],"channel":[16],"temperature":[17],"increase":[18],"is":[19,36,53],"observed":[20,37],"On-State":[22,47],"stress":[23,35],"which":[24],"leads":[25,59],"to":[26,44,60],"degradation":[27,62],"TDDB,":[29],"however,":[30,67],"less":[31],"impact":[32,74],"Off-State":[34],"TDDB.":[39],"MC":[40],"simulators":[41],"are":[42],"developed":[43],"predict":[45],"Off-State,":[46],"and":[48],"Dynamic":[49],"TDDB":[50,61],"It":[52],"shown":[54],"that":[55],"SHE":[56,71],"in":[57],"FinFETs":[58],"only":[63],"at":[64,68],"higher":[65],"bias,":[66],"use":[69],"conditions;":[70],"little":[73],"for":[75],"both":[76],"NMOS":[77],"&":[78],"PMOS":[79],"devices.":[80]},"counts_by_year":[{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}