{"id":"https://openalex.org/W4310614720","doi":"https://doi.org/10.1109/icta56932.2022.9963047","title":"BaFe<sub>12</sub>O<sub>19</sub> based Ferroelectric Memristor for Applications of True Random Number Generator","display_name":"BaFe<sub>12</sub>O<sub>19</sub> based Ferroelectric Memristor for Applications of True Random Number Generator","publication_year":2022,"publication_date":"2022-10-28","ids":{"openalex":"https://openalex.org/W4310614720","doi":"https://doi.org/10.1109/icta56932.2022.9963047"},"language":"en","primary_location":{"id":"doi:10.1109/icta56932.2022.9963047","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta56932.2022.9963047","pdf_url":null,"source":{"id":"https://openalex.org/S4363608577","display_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100324483","display_name":"Ziyang Chen","orcid":"https://orcid.org/0000-0002-2467-8372"},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Ziyang Chen","raw_affiliation_strings":["College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023","Gusu Laboratory of Materials, Suzhou, China"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023","institution_ids":["https://openalex.org/I41198531"]},{"raw_affiliation_string":"Gusu Laboratory of Materials, Suzhou, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078207030","display_name":"Miaocheng Zhang","orcid":"https://orcid.org/0000-0002-9062-5543"},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Miaocheng Zhang","raw_affiliation_strings":["College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023","Gusu Laboratory of Materials, Suzhou, China"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023","institution_ids":["https://openalex.org/I41198531"]},{"raw_affiliation_string":"Gusu Laboratory of Materials, Suzhou, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101564084","display_name":"Zixuan Ding","orcid":"https://orcid.org/0009-0003-7455-0937"},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zixuan Ding","raw_affiliation_strings":["College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023","institution_ids":["https://openalex.org/I41198531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046947410","display_name":"Aoze Han","orcid":null},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Aoze Han","raw_affiliation_strings":["College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023","institution_ids":["https://openalex.org/I41198531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006577665","display_name":"Xinavu Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinavu Chen","raw_affiliation_strings":["College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023","institution_ids":["https://openalex.org/I41198531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100732337","display_name":"Xinpeng Wang","orcid":"https://orcid.org/0000-0002-0580-3895"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Xinpeng Wang","raw_affiliation_strings":["Gusu Laboratory of Materials,Suzhou,China,215123"],"affiliations":[{"raw_affiliation_string":"Gusu Laboratory of Materials,Suzhou,China,215123","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100435771","display_name":"Lei Wang","orcid":"https://orcid.org/0000-0001-7266-148X"},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lei Wang","raw_affiliation_strings":["College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023","institution_ids":["https://openalex.org/I41198531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100396965","display_name":"Hao Zhang","orcid":"https://orcid.org/0000-0002-8201-3272"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hao Zhang","raw_affiliation_strings":["Gusu Laboratory of Materials,Suzhou,China,215123"],"affiliations":[{"raw_affiliation_string":"Gusu Laboratory of Materials,Suzhou,China,215123","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5054594954","display_name":"Yi Tong","orcid":"https://orcid.org/0000-0001-8146-3549"},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yi Tong","raw_affiliation_strings":["College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023","Gusu Laboratory of Materials, Suzhou, China"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023","institution_ids":["https://openalex.org/I41198531"]},{"raw_affiliation_string":"Gusu Laboratory of Materials, Suzhou, China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5100324483"],"corresponding_institution_ids":["https://openalex.org/I41198531"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.18523006,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"133","last_page":"134"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.9943000078201294,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.6096834540367126},{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.4818671643733978},{"id":"https://openalex.org/keywords/generator","display_name":"Generator (circuit theory)","score":0.43451401591300964},{"id":"https://openalex.org/keywords/randomness","display_name":"Randomness","score":0.41466620564460754},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4013960659503937},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.39384186267852783},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.313808798789978},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3051488995552063},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.26273709535598755},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.25546175241470337},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2305060625076294},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.18200799822807312},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.10214608907699585},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09979864954948425},{"id":"https://openalex.org/keywords/statistics","display_name":"Statistics","score":0.07970693707466125},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.07530707120895386}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.6096834540367126},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.4818671643733978},{"id":"https://openalex.org/C2780992000","wikidata":"https://www.wikidata.org/wiki/Q17016113","display_name":"Generator (circuit theory)","level":3,"score":0.43451401591300964},{"id":"https://openalex.org/C125112378","wikidata":"https://www.wikidata.org/wiki/Q176640","display_name":"Randomness","level":2,"score":0.41466620564460754},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4013960659503937},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.39384186267852783},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.313808798789978},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3051488995552063},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.26273709535598755},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.25546175241470337},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2305060625076294},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.18200799822807312},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.10214608907699585},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09979864954948425},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.07970693707466125},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.07530707120895386}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icta56932.2022.9963047","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta56932.2022.9963047","pdf_url":null,"source":{"id":"https://openalex.org/S4363608577","display_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8399999737739563}],"awards":[{"id":"https://openalex.org/G4395960513","display_name":null,"funder_award_id":"BK20211273","funder_id":"https://openalex.org/F4320325437","funder_display_name":"Jiangsu Science and Technology Department"},{"id":"https://openalex.org/G4942222945","display_name":null,"funder_award_id":"2021ZD0201200","funder_id":"https://openalex.org/F4320321540","funder_display_name":"Ministry of Science and Technology of the People's Republic of China"},{"id":"https://openalex.org/G8088281196","display_name":null,"funder_award_id":"61964012","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320321540","display_name":"Ministry of Science and Technology of the People's Republic of China","ror":"https://ror.org/027s68j25"},{"id":"https://openalex.org/F4320325437","display_name":"Jiangsu Science and Technology Department","ror":null}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W2807750997","https://openalex.org/W3011747191","https://openalex.org/W3013080934","https://openalex.org/W3108519520","https://openalex.org/W3159146981","https://openalex.org/W3173514808","https://openalex.org/W3195463528","https://openalex.org/W4200618606","https://openalex.org/W4205281504"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W4229452466","https://openalex.org/W2966276069","https://openalex.org/W2304829496","https://openalex.org/W2358307108","https://openalex.org/W3031124155","https://openalex.org/W2463286374","https://openalex.org/W2052332160","https://openalex.org/W2204001882","https://openalex.org/W2158958560"],"abstract_inverted_index":{"Ferroelectric":[0],"memristors":[1,120],"are":[2],"in":[3,12],"principle":[4],"a":[5,101,124],"promising":[6],"candidate":[7],"for":[8,14,117],"realizing":[9],"effective":[10],"computing":[11],"memory,":[13],"their":[15],"advantages":[16],"of":[17,68,76,91,95,104,127],"multi-bit":[18],"storage,":[19],"ultra-fast":[20],"switching":[21],"behavior,":[22],"and":[23,56,121],"low":[24],"power":[25],"consumption.":[26],"Here,":[27],"we":[28,98],"successfully":[29],"fabricated":[30],"the":[31,69,74,89,92,96,115],"Cu/BaFe":[32],"<inf":[33,37],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[34,38,53,62],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">12</inf>":[35],"O":[36],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">19</inf>":[39],"/Pt":[40],"ferroelectric":[41,77,119],"memristive":[42],"device":[43,70],"with":[44],"multi-resistance":[45],"state":[46],"(2":[47],"bits),":[48],"reliable":[49],"reproducibility":[50],"(>10":[51],"<sup":[52,61],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[54],"),":[55],"desired":[57],"on/off":[58],"ratio":[59],"(10":[60],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sup>":[63],").":[64],"The":[65],"conductive":[66],"mechanism":[67],"is":[71,80],"attributed":[72],"to":[73],"variation":[75],"barrier,":[78],"which":[79],"verified":[81],"by":[82],"first-principle":[83],"calculations.":[84],"In":[85],"addition,":[86],"based":[87],"on":[88],"randomness":[90],"SET":[93],"voltage":[94],"devices,":[97],"innovatively":[99],"propose":[100],"schematic":[102],"diagram":[103],"true":[105],"random":[106],"number":[107],"generator":[108],"(TRNG)":[109],"circuit.":[110],"This":[111],"work":[112],"may":[113],"pave":[114],"way":[116],"next-generation":[118],"further":[122],"enable":[123],"broad":[125],"range":[126],"multifunctional":[128],"applications.":[129]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}