{"id":"https://openalex.org/W3128332816","doi":"https://doi.org/10.1109/ickii50300.2020.9318939","title":"Fringe Gate Leakage of 28nm HK/MG nMOSFETs with Nitridation Treatments","display_name":"Fringe Gate Leakage of 28nm HK/MG nMOSFETs with Nitridation Treatments","publication_year":2020,"publication_date":"2020-08-21","ids":{"openalex":"https://openalex.org/W3128332816","doi":"https://doi.org/10.1109/ickii50300.2020.9318939","mag":"3128332816"},"language":"en","primary_location":{"id":"doi:10.1109/ickii50300.2020.9318939","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ickii50300.2020.9318939","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5075051218","display_name":"Decheng Zhang","orcid":"https://orcid.org/0000-0002-3162-9181"},"institutions":[{"id":"https://openalex.org/I143003336","display_name":"Minghsin University of Science and Technology","ror":"https://ror.org/054etzm63","country_code":"TW","type":"education","lineage":["https://openalex.org/I143003336"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"De-Cheng Zhang","raw_affiliation_strings":["Minghsin University of Science and Technology, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Minghsin University of Science and Technology, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I143003336"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110115188","display_name":"Ching-Chuan Chou","orcid":null},"institutions":[{"id":"https://openalex.org/I143003336","display_name":"Minghsin University of Science and Technology","ror":"https://ror.org/054etzm63","country_code":"TW","type":"education","lineage":["https://openalex.org/I143003336"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ching-Chuan Chou","raw_affiliation_strings":["Minghsin University of Science and Technology, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Minghsin University of Science and Technology, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I143003336"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071292146","display_name":"Ho-Hsiang Chen","orcid":"https://orcid.org/0000-0002-1372-226X"},"institutions":[{"id":"https://openalex.org/I143003336","display_name":"Minghsin University of Science and Technology","ror":"https://ror.org/054etzm63","country_code":"TW","type":"education","lineage":["https://openalex.org/I143003336"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ho-Hsiang Chen","raw_affiliation_strings":["Minghsin University of Science and Technology, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Minghsin University of Science and Technology, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I143003336"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080474979","display_name":"Shang-Ze Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I143003336","display_name":"Minghsin University of Science and Technology","ror":"https://ror.org/054etzm63","country_code":"TW","type":"education","lineage":["https://openalex.org/I143003336"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Shang-Ze Chen","raw_affiliation_strings":["Minghsin University of Science and Technology, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Minghsin University of Science and Technology, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I143003336"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100621854","display_name":"Jianming Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I143003336","display_name":"Minghsin University of Science and Technology","ror":"https://ror.org/054etzm63","country_code":"TW","type":"education","lineage":["https://openalex.org/I143003336"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Jian-Ming Chen","raw_affiliation_strings":["Minghsin University of Science and Technology, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Minghsin University of Science and Technology, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I143003336"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112288043","display_name":"Hui\u2010Yun Bor","orcid":null},"institutions":[{"id":"https://openalex.org/I189290911","display_name":"National Chung Shan Institute of Science and Technology","ror":"https://ror.org/034ezwg26","country_code":"TW","type":"government","lineage":["https://openalex.org/I189290911"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Hui-Yun Bor","raw_affiliation_strings":["Chung-Shan Institute of Science and Technology, Taoyuan, Taiwan"],"affiliations":[{"raw_affiliation_string":"Chung-Shan Institute of Science and Technology, Taoyuan, Taiwan","institution_ids":["https://openalex.org/I189290911"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110582675","display_name":"Wen\u2010How Lan","orcid":null},"institutions":[{"id":"https://openalex.org/I192168892","display_name":"National University of Kaohsiung","ror":"https://ror.org/013zjb662","country_code":"TW","type":"education","lineage":["https://openalex.org/I192168892"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Wen-How Lan","raw_affiliation_strings":["National University of Kaohsiung, Kaohsiung, Taiwan"],"affiliations":[{"raw_affiliation_string":"National University of Kaohsiung, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I192168892"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026006461","display_name":"Mu\u2010Chun Wang","orcid":"https://orcid.org/0000-0002-4605-0658"},"institutions":[{"id":"https://openalex.org/I143003336","display_name":"Minghsin University of Science and Technology","ror":"https://ror.org/054etzm63","country_code":"TW","type":"education","lineage":["https://openalex.org/I143003336"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Mu-Chun Wang","raw_affiliation_strings":["Minghsin University of Science and Technology, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Minghsin University of Science and Technology, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I143003336"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5075051218"],"corresponding_institution_ids":["https://openalex.org/I143003336"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.15981169,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.7024739980697632},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.7001138925552368},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6988768577575684},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6898127198219299},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.6099823117256165},{"id":"https://openalex.org/keywords/high-\u03ba-dielectric","display_name":"High-\u03ba dielectric","score":0.6081396341323853},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5965396165847778},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5877552628517151},{"id":"https://openalex.org/keywords/etching","display_name":"Etching (microfabrication)","score":0.4363389313220978},{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.42070138454437256},{"id":"https://openalex.org/keywords/nitrogen","display_name":"Nitrogen","score":0.41937553882598877},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4179025888442993},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3533804714679718},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.3131241202354431},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.21173706650733948},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19938287138938904},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.15169578790664673},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.14037340879440308},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10862243175506592},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.05496412515640259}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7024739980697632},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7001138925552368},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6988768577575684},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6898127198219299},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.6099823117256165},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.6081396341323853},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5965396165847778},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5877552628517151},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.4363389313220978},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.42070138454437256},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.41937553882598877},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4179025888442993},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3533804714679718},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.3131241202354431},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.21173706650733948},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19938287138938904},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.15169578790664673},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.14037340879440308},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10862243175506592},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.05496412515640259},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ickii50300.2020.9318939","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ickii50300.2020.9318939","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/6","display_name":"Clean water and sanitation","score":0.7400000095367432}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W324268386","https://openalex.org/W324409780","https://openalex.org/W1512740549","https://openalex.org/W1552527487","https://openalex.org/W1656616130","https://openalex.org/W2036951294","https://openalex.org/W2040980105","https://openalex.org/W2050322052","https://openalex.org/W2069407422","https://openalex.org/W2329302998","https://openalex.org/W2330802025","https://openalex.org/W3003546491","https://openalex.org/W3009598260","https://openalex.org/W3040291009"],"related_works":["https://openalex.org/W2084196976","https://openalex.org/W2071712090","https://openalex.org/W1973221791","https://openalex.org/W2796938634","https://openalex.org/W2287887285","https://openalex.org/W2074099177","https://openalex.org/W2064786169","https://openalex.org/W2115152876","https://openalex.org/W2363136417","https://openalex.org/W2002140510"],"abstract_inverted_index":{"DPN":[0],"nitridation":[1],"treatment":[2],"is":[3,77],"a":[4,78],"useful":[5],"method":[6],"to":[7,68,74],"improve":[8],"the":[9,18,27,32,36,40,47,53,70,75],"related":[10,73],"dielectric":[11],"constant":[12],"(k-value)":[13],"and":[14,39,65,80],"trap":[15],"issues":[16],"in":[17],"formation":[19,42],"of":[20,50],"high-k":[21,37],"gate":[22,33],"dielectric.":[23],"In":[24],"this":[25],"work,":[26],"main":[28],"focus":[29],"aims":[30],"on":[31],"leakage":[34,71],"after":[35,43],"growth":[38],"shape":[41],"etching":[44],"process":[45],"with":[46,61],"same":[48],"concentration":[49],"nitrogen,":[51],"but":[52],"different":[54],"annealing":[55],"temperatures.":[56],"Using":[57],"three":[58],"tested":[59],"devices":[60,67],"normal":[62],"long-channel,":[63],"bulk-area,":[64],"finger-type":[66],"probe":[69],"issue":[72],"processes":[76],"feasible":[79],"possible":[81],"way.":[82]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}