{"id":"https://openalex.org/W4223546173","doi":"https://doi.org/10.1109/iceic54506.2022.9748703","title":"TCAD simulation of electrical characteristics dependence on metal work function for Schottky Contact-Super Barrier Rectifier (SC-SBR)","display_name":"TCAD simulation of electrical characteristics dependence on metal work function for Schottky Contact-Super Barrier Rectifier (SC-SBR)","publication_year":2022,"publication_date":"2022-02-06","ids":{"openalex":"https://openalex.org/W4223546173","doi":"https://doi.org/10.1109/iceic54506.2022.9748703"},"language":"en","primary_location":{"id":"doi:10.1109/iceic54506.2022.9748703","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceic54506.2022.9748703","pdf_url":null,"source":{"id":"https://openalex.org/S4363608213","display_name":"2022 International Conference on Electronics, Information, and Communication (ICEIC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 International Conference on Electronics, Information, and Communication (ICEIC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064365103","display_name":"Sung-Kyu Kwon","orcid":"https://orcid.org/0000-0002-0343-7086"},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Sungkyu Kwon","raw_affiliation_strings":["Electronics and Telecommunications Research Institute (ETRI),DMC Convergence Research Department,Daejeon,Korea","DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"Electronics and Telecommunications Research Institute (ETRI),DMC Convergence Research Department,Daejeon,Korea","institution_ids":["https://openalex.org/I142401562"]},{"raw_affiliation_string":"DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea","institution_ids":["https://openalex.org/I142401562"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082148896","display_name":"Doohyung Cho","orcid":null},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Doohyung Cho","raw_affiliation_strings":["Electronics and Telecommunications Research Institute (ETRI),DMC Convergence Research Department,Daejeon,Korea","DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"Electronics and Telecommunications Research Institute (ETRI),DMC Convergence Research Department,Daejeon,Korea","institution_ids":["https://openalex.org/I142401562"]},{"raw_affiliation_string":"DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea","institution_ids":["https://openalex.org/I142401562"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110225387","display_name":"Jong-Il Won","orcid":null},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jongil Won","raw_affiliation_strings":["Electronics and Telecommunications Research Institute (ETRI),DMC Convergence Research Department,Daejeon,Korea","DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"Electronics and Telecommunications Research Institute (ETRI),DMC Convergence Research Department,Daejeon,Korea","institution_ids":["https://openalex.org/I142401562"]},{"raw_affiliation_string":"DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea","institution_ids":["https://openalex.org/I142401562"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113985357","display_name":"Dong-Yun Jung","orcid":null},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dongyun Jung","raw_affiliation_strings":["Electronics and Telecommunications Research Institute (ETRI),DMC Convergence Research Department,Daejeon,Korea","DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"Electronics and Telecommunications Research Institute (ETRI),DMC Convergence Research Department,Daejeon,Korea","institution_ids":["https://openalex.org/I142401562"]},{"raw_affiliation_string":"DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea","institution_ids":["https://openalex.org/I142401562"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113438702","display_name":"Hyun\u2010Gyu Jang","orcid":null},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyungyu Jang","raw_affiliation_strings":["Electronics and Telecommunications Research Institute (ETRI),DMC Convergence Research Department,Daejeon,Korea","DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"Electronics and Telecommunications Research Institute (ETRI),DMC Convergence Research Department,Daejeon,Korea","institution_ids":["https://openalex.org/I142401562"]},{"raw_affiliation_string":"DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea","institution_ids":["https://openalex.org/I142401562"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5031412337","display_name":"Kun-Sik Park","orcid":null},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kunsik Park","raw_affiliation_strings":["Electronics and Telecommunications Research Institute (ETRI),DMC Convergence Research Department,Daejeon,Korea","DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"Electronics and Telecommunications Research Institute (ETRI),DMC Convergence Research Department,Daejeon,Korea","institution_ids":["https://openalex.org/I142401562"]},{"raw_affiliation_string":"DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea","institution_ids":["https://openalex.org/I142401562"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5064365103"],"corresponding_institution_ids":["https://openalex.org/I142401562"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.02082856,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"10","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.7783702611923218},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7663071155548096},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.7079563140869141},{"id":"https://openalex.org/keywords/work-function","display_name":"Work function","score":0.6849365234375},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5454720258712769},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5354630351066589},{"id":"https://openalex.org/keywords/metal\u2013semiconductor-junction","display_name":"Metal\u2013semiconductor junction","score":0.49366769194602966},{"id":"https://openalex.org/keywords/work","display_name":"Work (physics)","score":0.48287108540534973},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.4801056683063507},{"id":"https://openalex.org/keywords/rectifier","display_name":"Rectifier (neural networks)","score":0.4432457387447357},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4327765703201294},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42045411467552185},{"id":"https://openalex.org/keywords/metal","display_name":"Metal","score":0.4180666208267212},{"id":"https://openalex.org/keywords/reverse-leakage-current","display_name":"Reverse leakage current","score":0.4111279845237732},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28057461977005005},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.1646428406238556},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.13318902254104614},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.12156379222869873},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.09400680661201477},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08801934123039246}],"concepts":[{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.7783702611923218},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7663071155548096},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.7079563140869141},{"id":"https://openalex.org/C115235246","wikidata":"https://www.wikidata.org/wiki/Q783800","display_name":"Work function","level":3,"score":0.6849365234375},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5454720258712769},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5354630351066589},{"id":"https://openalex.org/C5667319","wikidata":"https://www.wikidata.org/wiki/Q1924839","display_name":"Metal\u2013semiconductor junction","level":4,"score":0.49366769194602966},{"id":"https://openalex.org/C18762648","wikidata":"https://www.wikidata.org/wiki/Q42213","display_name":"Work (physics)","level":2,"score":0.48287108540534973},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.4801056683063507},{"id":"https://openalex.org/C50100734","wikidata":"https://www.wikidata.org/wiki/Q7303176","display_name":"Rectifier (neural networks)","level":5,"score":0.4432457387447357},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4327765703201294},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42045411467552185},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.4180666208267212},{"id":"https://openalex.org/C20615193","wikidata":"https://www.wikidata.org/wiki/Q2309288","display_name":"Reverse leakage current","level":4,"score":0.4111279845237732},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28057461977005005},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.1646428406238556},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.13318902254104614},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.12156379222869873},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.09400680661201477},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08801934123039246},{"id":"https://openalex.org/C86582703","wikidata":"https://www.wikidata.org/wiki/Q7617824","display_name":"Stochastic neural network","level":4,"score":0.0},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C147168706","wikidata":"https://www.wikidata.org/wiki/Q1457734","display_name":"Recurrent neural network","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iceic54506.2022.9748703","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceic54506.2022.9748703","pdf_url":null,"source":{"id":"https://openalex.org/S4363608213","display_name":"2022 International Conference on Electronics, Information, and Communication (ICEIC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 International Conference on Electronics, Information, and Communication (ICEIC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.41999998688697815}],"awards":[{"id":"https://openalex.org/G5813776524","display_name":null,"funder_award_id":"CRC-19-02-ETRI","funder_id":"https://openalex.org/F4320325370","funder_display_name":"National Research Council of Science and Technology"}],"funders":[{"id":"https://openalex.org/F4320325370","display_name":"National Research Council of Science and Technology","ror":"https://ror.org/058rymf81"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W101470050","https://openalex.org/W1550306623","https://openalex.org/W1579937368","https://openalex.org/W2024837521","https://openalex.org/W2037866400","https://openalex.org/W2101341868","https://openalex.org/W2125213571","https://openalex.org/W2156480746","https://openalex.org/W2441271169","https://openalex.org/W2771122409","https://openalex.org/W3063653908","https://openalex.org/W6604167729"],"related_works":["https://openalex.org/W4297808641","https://openalex.org/W3095145408","https://openalex.org/W1973983724","https://openalex.org/W2108461002","https://openalex.org/W2241030675","https://openalex.org/W2349421350","https://openalex.org/W2035255950","https://openalex.org/W2048698431","https://openalex.org/W2386099220","https://openalex.org/W1984505337"],"abstract_inverted_index":{"The":[0],"effect":[1],"of":[2,16,48,87],"work":[3,46,85],"function":[4,47,86],"on":[5],"metal/Si":[6],"Schottky":[7,88],"junction":[8],"have":[9,24],"been":[10,25],"studied":[11],"to":[12,27],"examine":[13],"the":[14,38,49,63,78,84],"contribution":[15],"forward":[17,65],"and":[18,32,68],"reverse":[19],"blocking":[20],"properties.":[21],"TCAD":[22],"simulation":[23],"used":[26],"study":[28],"in":[29,90],"conventional":[30,57],"SBR":[31],"SC-SBR":[33,39],"structure.":[34],"We":[35],"found":[36],"that":[37],"exhibits":[40],"similar":[41],"electrical":[42],"characteristics":[43,71,81],"at":[44],"low":[45,64],"source":[50],"metal":[51,89],"with":[52],"lower":[53],"leakage":[54,69],"current":[55,70],"than":[56],"SBR.":[58],"Thus,":[59],"we":[60],"can":[61],"achieve":[62],"voltage":[66,80],"drop":[67],"plus":[72],"enhanced":[73],"EAS":[74],"properties":[75],"while":[76],"maintaining":[77],"breakdown":[79],"by":[82],"varying":[83],"SC-SBR.":[91]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}