{"id":"https://openalex.org/W1972640701","doi":"https://doi.org/10.1109/iceee.2010.5608658","title":"Structural and electrical characterization of thermally oxidized Zn films","display_name":"Structural and electrical characterization of thermally oxidized Zn films","publication_year":2010,"publication_date":"2010-09-01","ids":{"openalex":"https://openalex.org/W1972640701","doi":"https://doi.org/10.1109/iceee.2010.5608658","mag":"1972640701"},"language":"en","primary_location":{"id":"doi:10.1109/iceee.2010.5608658","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceee.2010.5608658","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 7th International Conference on Electrical Engineering Computing Science and Automatic Control","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021305547","display_name":"O. Garc\u00eda-Serrano","orcid":null},"institutions":[{"id":"https://openalex.org/I68368234","display_name":"Center for Research and Advanced Studies of the National Polytechnic Institute","ror":"https://ror.org/009eqmr18","country_code":"MX","type":"facility","lineage":["https://openalex.org/I59361560","https://openalex.org/I68368234"]}],"countries":["MX"],"is_corresponding":true,"raw_author_name":"O. Garcia-Serrano","raw_affiliation_strings":["Department of Electrical Engineering, CINVESTAV-IPN, Mexico D.F., Mexico","Department of Electrical Engineering, Solid State Electronic Section (SEES), CINVESTAV-IPN, Mexico D.F., Mexico"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, CINVESTAV-IPN, Mexico D.F., Mexico","institution_ids":["https://openalex.org/I68368234"]},{"raw_affiliation_string":"Department of Electrical Engineering, Solid State Electronic Section (SEES), CINVESTAV-IPN, Mexico D.F., Mexico","institution_ids":["https://openalex.org/I68368234"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109943674","display_name":"M.A. V\u00e1zquez-Agust\u00edn","orcid":null},"institutions":[{"id":"https://openalex.org/I68368234","display_name":"Center for Research and Advanced Studies of the National Polytechnic Institute","ror":"https://ror.org/009eqmr18","country_code":"MX","type":"facility","lineage":["https://openalex.org/I59361560","https://openalex.org/I68368234"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"M. Vazquez-Agustin","raw_affiliation_strings":["Department of Electrical Engineering, CINVESTAV-IPN, Mexico D.F","Department of Electrical Engineering, Solid State Electronic Section (SEES), CINVESTAV-IPN, Mexico D.F., Mexico"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, CINVESTAV-IPN, Mexico D.F","institution_ids":[]},{"raw_affiliation_string":"Department of Electrical Engineering, Solid State Electronic Section (SEES), CINVESTAV-IPN, Mexico D.F., Mexico","institution_ids":["https://openalex.org/I68368234"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010218680","display_name":"R. Pe\u00f1a\u2010Sierra","orcid":"https://orcid.org/0000-0002-5412-7256"},"institutions":[{"id":"https://openalex.org/I68368234","display_name":"Center for Research and Advanced Studies of the National Polytechnic Institute","ror":"https://ror.org/009eqmr18","country_code":"MX","type":"facility","lineage":["https://openalex.org/I59361560","https://openalex.org/I68368234"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"R. Pena-Sierra","raw_affiliation_strings":["Department of Electrical Engineering, CINVESTAV-IPN, Mexico D.F., Mexico","Department of Electrical Engineering, Solid State Electronic Section (SEES), CINVESTAV-IPN, Mexico D.F., Mexico"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, CINVESTAV-IPN, Mexico D.F., Mexico","institution_ids":["https://openalex.org/I68368234"]},{"raw_affiliation_string":"Department of Electrical Engineering, Solid State Electronic Section (SEES), CINVESTAV-IPN, Mexico D.F., Mexico","institution_ids":["https://openalex.org/I68368234"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047102528","display_name":"G. Romero-Paredes","orcid":null},"institutions":[{"id":"https://openalex.org/I68368234","display_name":"Center for Research and Advanced Studies of the National Polytechnic Institute","ror":"https://ror.org/009eqmr18","country_code":"MX","type":"facility","lineage":["https://openalex.org/I59361560","https://openalex.org/I68368234"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"G. Romero-Paredes","raw_affiliation_strings":["Department of Electrical Engineering, CINVESTAV-IPN, Mexico D.F., Mexico","Department of Electrical Engineering, Solid State Electronic Section (SEES), CINVESTAV-IPN, Mexico D.F., Mexico"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, CINVESTAV-IPN, Mexico D.F., Mexico","institution_ids":["https://openalex.org/I68368234"]},{"raw_affiliation_string":"Department of Electrical Engineering, Solid State Electronic Section (SEES), CINVESTAV-IPN, Mexico D.F., Mexico","institution_ids":["https://openalex.org/I68368234"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5057561373","display_name":"O. Goiz","orcid":"https://orcid.org/0000-0002-7116-282X"},"institutions":[{"id":"https://openalex.org/I68368234","display_name":"Center for Research and Advanced Studies of the National Polytechnic Institute","ror":"https://ror.org/009eqmr18","country_code":"MX","type":"facility","lineage":["https://openalex.org/I59361560","https://openalex.org/I68368234"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"O. Goiz-Amaro","raw_affiliation_strings":["Department of Electrical Engineering, CINVESTAV-IPN, Mexico D.F., Mexico","Department of Electrical Engineering, Solid State Electronic Section (SEES), CINVESTAV-IPN, Mexico D.F., Mexico"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, CINVESTAV-IPN, Mexico D.F., Mexico","institution_ids":["https://openalex.org/I68368234"]},{"raw_affiliation_string":"Department of Electrical Engineering, Solid State Electronic Section (SEES), CINVESTAV-IPN, Mexico D.F., Mexico","institution_ids":["https://openalex.org/I68368234"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5021305547"],"corresponding_institution_ids":["https://openalex.org/I68368234"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.06329436,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"283","issue":null,"first_page":"560","last_page":"564"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10461","display_name":"Gas Sensing Nanomaterials and Sensors","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/van-der-pauw-method","display_name":"Van der Pauw method","score":0.6975501775741577},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5230218768119812},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4895249605178833},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.4838672876358032},{"id":"https://openalex.org/keywords/nuclear-chemistry","display_name":"Nuclear chemistry","score":0.32559844851493835},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2559194564819336},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.21959137916564941},{"id":"https://openalex.org/keywords/electrical-resistivity-and-conductivity","display_name":"Electrical resistivity and conductivity","score":0.20866429805755615},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.18254715204238892},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.14933860301971436},{"id":"https://openalex.org/keywords/hall-effect","display_name":"Hall effect","score":0.09030604362487793}],"concepts":[{"id":"https://openalex.org/C85443114","wikidata":"https://www.wikidata.org/wiki/Q1521268","display_name":"Van der Pauw method","level":4,"score":0.6975501775741577},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5230218768119812},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4895249605178833},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4838672876358032},{"id":"https://openalex.org/C13965031","wikidata":"https://www.wikidata.org/wiki/Q243545","display_name":"Nuclear chemistry","level":1,"score":0.32559844851493835},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2559194564819336},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21959137916564941},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.20866429805755615},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.18254715204238892},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.14933860301971436},{"id":"https://openalex.org/C134112204","wikidata":"https://www.wikidata.org/wiki/Q10656","display_name":"Hall effect","level":3,"score":0.09030604362487793},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iceee.2010.5608658","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceee.2010.5608658","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 7th International Conference on Electrical Engineering Computing Science and Automatic Control","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321739","display_name":"Consejo Nacional de Ciencia y Tecnolog\u00eda","ror":"https://ror.org/059ex5q34"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1963497793","https://openalex.org/W2009385619","https://openalex.org/W2047436182","https://openalex.org/W2078112990","https://openalex.org/W2079822235","https://openalex.org/W2080965183","https://openalex.org/W2086231006","https://openalex.org/W2091373640","https://openalex.org/W2120105133"],"related_works":["https://openalex.org/W2899118975","https://openalex.org/W4294265870","https://openalex.org/W2039137594","https://openalex.org/W2373612270","https://openalex.org/W1983638371","https://openalex.org/W1978285339","https://openalex.org/W2618077023","https://openalex.org/W2068848363","https://openalex.org/W2081841307","https://openalex.org/W2096669111"],"abstract_inverted_index":{"High":[0],"quality":[1],"ZnO":[2,58,62,94],"films":[3,11,22,53,59,63,95],"were":[4,28,82],"obtained":[5],"by":[6,35,56,75,84],"thermal":[7],"oxidation":[8,40,49],"of":[9,23,50,101,121],"Zn":[10,21,52],"on":[12,30],"the":[13,36,51,57,85,119],"temperature":[14],"range":[15,120],"from":[16],"300":[17],"to":[18,106,123],"700":[19],"\u00b0C.":[20],"190":[24],"nm":[25],"in":[26,118],"thickness":[27],"deposited":[29],"silicon":[31],"and":[32,115],"glass":[33],"substrates":[34],"sputtering":[37],"technique.":[38],"Thermal":[39],"was":[41,54,73],"done":[42],"at":[43,90],"normal":[44],"environment":[45],"conditions.":[46],"The":[47,61,69,79,93],"complete":[48],"determined":[55],"transparency.":[60],"resulted":[64,96],"dense":[65],"with":[66,98],"mirror-like":[67],"surface.":[68],"film":[70],"structural":[71],"characterization":[72],"realized":[74],"X-ray":[76],"diffraction":[77],"measurements.":[78],"electrical":[80],"characteristics":[81],"measured":[83],"van":[86],"der":[87],"Pauw":[88],"method":[89],"room":[91],"temperature.":[92],"n-type":[97],"carrier":[99],"concentration":[100],"10":[102,107],"<sup":[103,108,112,126],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[104,109,113,127],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">16</sup>":[105],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">17</sup>":[110],"cm":[111,125],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">-3</sup>":[114],"mobility":[116],"values":[117],"1":[122],"50":[124],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[128],"/V-s.":[129]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}