{"id":"https://openalex.org/W2305042079","doi":"https://doi.org/10.1109/icecs.2015.7440268","title":"Impact of dynamic voltage scaling and thermal factors on FinFET-based SRAM reliability","display_name":"Impact of dynamic voltage scaling and thermal factors on FinFET-based SRAM reliability","publication_year":2015,"publication_date":"2015-12-01","ids":{"openalex":"https://openalex.org/W2305042079","doi":"https://doi.org/10.1109/icecs.2015.7440268","mag":"2305042079"},"language":"en","primary_location":{"id":"doi:10.1109/icecs.2015.7440268","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2015.7440268","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://figshare.com/articles/conference_contribution/Impact_of_Dynamic_Voltage_Scaling_and_Thermal_Factors_on_FinFET-based_SRAM_Reliability/10127456","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110471840","display_name":"Felipe Rocha da Rosa","orcid":null},"institutions":[{"id":"https://openalex.org/I130442723","display_name":"Universidade Federal do Rio Grande do Sul","ror":"https://ror.org/041yk2d64","country_code":"BR","type":"education","lineage":["https://openalex.org/I130442723"]}],"countries":["BR"],"is_corresponding":true,"raw_author_name":"F. R. Rosa","raw_affiliation_strings":["PGMICRO\\PPGC Instituto de Informtica, Universidade Federal do Rio Grande do Sul"],"affiliations":[{"raw_affiliation_string":"PGMICRO\\PPGC Instituto de Informtica, Universidade Federal do Rio Grande do Sul","institution_ids":["https://openalex.org/I130442723"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083599047","display_name":"Raphael M. Brum","orcid":"https://orcid.org/0000-0001-5317-4934"},"institutions":[{"id":"https://openalex.org/I130442723","display_name":"Universidade Federal do Rio Grande do Sul","ror":"https://ror.org/041yk2d64","country_code":"BR","type":"education","lineage":["https://openalex.org/I130442723"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"R. M. Brum","raw_affiliation_strings":["Departamento de Engenharia Eletrica, Universidade Federal do Rio Grande do Sul"],"affiliations":[{"raw_affiliation_string":"Departamento de Engenharia Eletrica, Universidade Federal do Rio Grande do Sul","institution_ids":["https://openalex.org/I130442723"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022015482","display_name":"Gilson Wirth","orcid":"https://orcid.org/0000-0002-4990-5113"},"institutions":[{"id":"https://openalex.org/I130442723","display_name":"Universidade Federal do Rio Grande do Sul","ror":"https://ror.org/041yk2d64","country_code":"BR","type":"education","lineage":["https://openalex.org/I130442723"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"G. Wirth","raw_affiliation_strings":["Departamento de Engenharia Eletrica, Universidade Federal do Rio Grande do Sul"],"affiliations":[{"raw_affiliation_string":"Departamento de Engenharia Eletrica, Universidade Federal do Rio Grande do Sul","institution_ids":["https://openalex.org/I130442723"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080883695","display_name":"Luciano Ost","orcid":"https://orcid.org/0000-0002-5160-5232"},"institutions":[{"id":"https://openalex.org/I153648349","display_name":"University of Leicester","ror":"https://ror.org/04h699437","country_code":"GB","type":"education","lineage":["https://openalex.org/I153648349"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"L. Ost","raw_affiliation_strings":["Department of Engineering, University of Leicester, Leicester, United Kingdom"],"affiliations":[{"raw_affiliation_string":"Department of Engineering, University of Leicester, Leicester, United Kingdom","institution_ids":["https://openalex.org/I153648349"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108043721","display_name":"Ricardo Reis","orcid":"https://orcid.org/0000-0001-5781-5858"},"institutions":[{"id":"https://openalex.org/I130442723","display_name":"Universidade Federal do Rio Grande do Sul","ror":"https://ror.org/041yk2d64","country_code":"BR","type":"education","lineage":["https://openalex.org/I130442723"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"R. Reis","raw_affiliation_strings":["PGMICRO\\PPGC Instituto de Informtica, Universidade Federal do Rio Grande do Sul"],"affiliations":[{"raw_affiliation_string":"PGMICRO\\PPGC Instituto de Informtica, Universidade Federal do Rio Grande do Sul","institution_ids":["https://openalex.org/I130442723"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5110471840"],"corresponding_institution_ids":["https://openalex.org/I130442723"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.14702098,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"137","last_page":"140"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.875278115272522},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.7363306283950806},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7099739909172058},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6511850357055664},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6469415426254272},{"id":"https://openalex.org/keywords/dynamic-voltage-scaling","display_name":"Dynamic voltage scaling","score":0.5937631726264954},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5471602082252502},{"id":"https://openalex.org/keywords/soft-error","display_name":"Soft error","score":0.4649210274219513},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4420683681964874},{"id":"https://openalex.org/keywords/energy","display_name":"Energy (signal processing)","score":0.43624159693717957},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3484060764312744},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3441278338432312},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.267433226108551},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2535043954849243},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.0979190468788147},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.09365984797477722}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.875278115272522},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.7363306283950806},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7099739909172058},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6511850357055664},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6469415426254272},{"id":"https://openalex.org/C2776047111","wikidata":"https://www.wikidata.org/wiki/Q632037","display_name":"Dynamic voltage scaling","level":3,"score":0.5937631726264954},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5471602082252502},{"id":"https://openalex.org/C154474529","wikidata":"https://www.wikidata.org/wiki/Q1658917","display_name":"Soft error","level":2,"score":0.4649210274219513},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4420683681964874},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.43624159693717957},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3484060764312744},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3441278338432312},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.267433226108551},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2535043954849243},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0979190468788147},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.09365984797477722},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/icecs.2015.7440268","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2015.7440268","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","raw_type":"proceedings-article"},{"id":"pmh:oai:figshare.com:article/10127456","is_oa":true,"landing_page_url":"https://figshare.com/articles/conference_contribution/Impact_of_Dynamic_Voltage_Scaling_and_Thermal_Factors_on_FinFET-based_SRAM_Reliability/10127456","pdf_url":null,"source":{"id":"https://openalex.org/S4377196282","display_name":"Figshare","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4210132348","host_organization_name":"Figshare (United Kingdom)","host_organization_lineage":["https://openalex.org/I4210132348"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Text"},{"id":"pmh:oai:lra.le.ac.uk:2381/37453","is_oa":true,"landing_page_url":"http://hdl.handle.net/2381/37453","pdf_url":null,"source":{"id":"https://openalex.org/S4306402365","display_name":"Leicester Research Archive (University of Leicester)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I153648349","host_organization_name":"University of Leicester","host_organization_lineage":["https://openalex.org/I153648349"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Conference Paper"}],"best_oa_location":{"id":"pmh:oai:figshare.com:article/10127456","is_oa":true,"landing_page_url":"https://figshare.com/articles/conference_contribution/Impact_of_Dynamic_Voltage_Scaling_and_Thermal_Factors_on_FinFET-based_SRAM_Reliability/10127456","pdf_url":null,"source":{"id":"https://openalex.org/S4377196282","display_name":"Figshare","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4210132348","host_organization_name":"Figshare (United Kingdom)","host_organization_lineage":["https://openalex.org/I4210132348"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Text"},"sustainable_development_goals":[{"score":0.8999999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1030007664","https://openalex.org/W1864318607","https://openalex.org/W1978362728","https://openalex.org/W1986838305","https://openalex.org/W1997325123","https://openalex.org/W2004912055","https://openalex.org/W2040089377","https://openalex.org/W2045322931","https://openalex.org/W2078129432","https://openalex.org/W2088929465","https://openalex.org/W2124779213","https://openalex.org/W2144207655","https://openalex.org/W2152652532","https://openalex.org/W2273419086"],"related_works":["https://openalex.org/W4290647047","https://openalex.org/W1500230652","https://openalex.org/W2363504003","https://openalex.org/W2066033226","https://openalex.org/W2548582980","https://openalex.org/W2620706469","https://openalex.org/W2052914698","https://openalex.org/W2088929465","https://openalex.org/W2612883256","https://openalex.org/W4386933833"],"abstract_inverted_index":{"FinFET":[0,23],"technology":[1],"appears":[2],"as":[3,76],"an":[4],"alternative":[5],"solution":[6],"to":[7,21,30,51,69,101,110],"mitigate":[8],"short-channel":[9],"effects":[10],"in":[11],"traditional":[12],"CMOS":[13],"down-scaled":[14],"technology.":[15],"Emerging":[16],"embedded":[17],"systems":[18],"are":[19],"likely":[20],"employ":[22],"and":[24,34,95],"dynamic":[25,71],"voltage":[26,81,96],"scaling":[27,82,97],"(DVS),":[28],"aiming":[29],"improve":[31],"system":[32],"performance":[33],"energy-efficiency.":[35],"This":[36],"paper":[37],"claims":[38],"that":[39,62,92],"the":[40,45,65,70,74,80,104,111],"use":[41],"of":[42,47,73,79,106,113],"DVS":[43],"increases":[44],"susceptibility":[46,105],"FinFET-based":[48,107],"SRAM":[49,108],"cells":[50,109],"soft":[52,114],"errors":[53],"under":[54],"radiation":[55],"effects.":[56],"To":[57],"investigate":[58],"that,":[59],"a":[60,77],"methodology":[61],"allows":[63],"determining":[64],"critical":[66],"charge":[67],"according":[68],"behaviour":[72],"temperature":[75,94],"function":[78],"is":[83],"used.":[84],"Obtained":[85],"results":[86],"support":[87],"our":[88],"claim":[89],"by":[90],"showing":[91],"both":[93],"can":[98],"increase":[99],"up":[100],"five":[102],"times":[103],"occurrence":[112],"errors.":[115]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}