{"id":"https://openalex.org/W1986764227","doi":"https://doi.org/10.1109/icecs.2013.6815344","title":"Characteristics and sensitivity analysis of Gate Inside Junctionless Transistor (GI-JLT)","display_name":"Characteristics and sensitivity analysis of Gate Inside Junctionless Transistor (GI-JLT)","publication_year":2013,"publication_date":"2013-12-01","ids":{"openalex":"https://openalex.org/W1986764227","doi":"https://doi.org/10.1109/icecs.2013.6815344","mag":"1986764227"},"language":"en","primary_location":{"id":"doi:10.1109/icecs.2013.6815344","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2013.6815344","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5050292744","display_name":"Pankaj Kumar","orcid":"https://orcid.org/0000-0002-8987-7014"},"institutions":[{"id":"https://openalex.org/I207223250","display_name":"Indian Institute of Information Technology Design and Manufacturing Jabalpur","ror":"https://ror.org/00gmd7q80","country_code":"IN","type":"education","lineage":["https://openalex.org/I207223250"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Pankaj Kumar","raw_affiliation_strings":["Department of Electronics and Communication Engineering, PDPM IIITDM, Jabalpur, MP, India","Department of Electronics and Communication Engineering, PDPM IIITDM Jabalpur, MP, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, PDPM IIITDM, Jabalpur, MP, India","institution_ids":["https://openalex.org/I207223250"]},{"raw_affiliation_string":"Department of Electronics and Communication Engineering, PDPM IIITDM Jabalpur, MP, India","institution_ids":["https://openalex.org/I207223250"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112825274","display_name":"P. N. Kondekar","orcid":null},"institutions":[{"id":"https://openalex.org/I207223250","display_name":"Indian Institute of Information Technology Design and Manufacturing Jabalpur","ror":"https://ror.org/00gmd7q80","country_code":"IN","type":"education","lineage":["https://openalex.org/I207223250"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"P.N. Kondekar","raw_affiliation_strings":["Department of Electronics and Communication Engineering, PDPM IIITDM, Jabalpur, MP, India","Department of Electronics and Communication Engineering, PDPM IIITDM Jabalpur, MP, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, PDPM IIITDM, Jabalpur, MP, India","institution_ids":["https://openalex.org/I207223250"]},{"raw_affiliation_string":"Department of Electronics and Communication Engineering, PDPM IIITDM Jabalpur, MP, India","institution_ids":["https://openalex.org/I207223250"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073551268","display_name":"Sangeeta Singh","orcid":"https://orcid.org/0000-0002-1185-0540"},"institutions":[{"id":"https://openalex.org/I207223250","display_name":"Indian Institute of Information Technology Design and Manufacturing Jabalpur","ror":"https://ror.org/00gmd7q80","country_code":"IN","type":"education","lineage":["https://openalex.org/I207223250"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Sangeeta Singh","raw_affiliation_strings":["Department of Electronics and Communication Engineering, PDPM IIITDM, Jabalpur, MP, India","Department of Electronics and Communication Engineering, PDPM IIITDM Jabalpur, MP, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, PDPM IIITDM, Jabalpur, MP, India","institution_ids":["https://openalex.org/I207223250"]},{"raw_affiliation_string":"Department of Electronics and Communication Engineering, PDPM IIITDM Jabalpur, MP, India","institution_ids":["https://openalex.org/I207223250"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5050277775","display_name":"Ishu Agrawal","orcid":null},"institutions":[{"id":"https://openalex.org/I207223250","display_name":"Indian Institute of Information Technology Design and Manufacturing Jabalpur","ror":"https://ror.org/00gmd7q80","country_code":"IN","type":"education","lineage":["https://openalex.org/I207223250"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ishu Agrawal","raw_affiliation_strings":["Department of Electronics and Communication Engineering, PDPM IIITDM, Jabalpur, MP, India","Department of Electronics and Communication Engineering, PDPM IIITDM Jabalpur, MP, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, PDPM IIITDM, Jabalpur, MP, India","institution_ids":["https://openalex.org/I207223250"]},{"raw_affiliation_string":"Department of Electronics and Communication Engineering, PDPM IIITDM Jabalpur, MP, India","institution_ids":["https://openalex.org/I207223250"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5050292744"],"corresponding_institution_ids":["https://openalex.org/I207223250"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.06078085,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"56","last_page":"59"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7460524439811707},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.6489264369010925},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.6181402206420898},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.566453754901886},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.523689866065979},{"id":"https://openalex.org/keywords/sensitivity","display_name":"Sensitivity (control systems)","score":0.5230927467346191},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4685092270374298},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.428066223859787},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.4116189181804657},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40144580602645874},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.3652231693267822},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.2333018183708191},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.1769418716430664},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09199562668800354},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08819147944450378}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7460524439811707},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.6489264369010925},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6181402206420898},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.566453754901886},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.523689866065979},{"id":"https://openalex.org/C21200559","wikidata":"https://www.wikidata.org/wiki/Q7451068","display_name":"Sensitivity (control systems)","level":2,"score":0.5230927467346191},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4685092270374298},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.428066223859787},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.4116189181804657},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40144580602645874},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3652231693267822},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.2333018183708191},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1769418716430664},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09199562668800354},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08819147944450378},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icecs.2013.6815344","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2013.6815344","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W2014022181","https://openalex.org/W2038170265","https://openalex.org/W2051341229","https://openalex.org/W2056337904","https://openalex.org/W2057149094","https://openalex.org/W2098008059","https://openalex.org/W2119378720","https://openalex.org/W2131682918","https://openalex.org/W2141380981","https://openalex.org/W2147641226","https://openalex.org/W2148360254","https://openalex.org/W2163637740"],"related_works":["https://openalex.org/W3014521742","https://openalex.org/W2617868873","https://openalex.org/W3204141294","https://openalex.org/W4386230336","https://openalex.org/W4306968100","https://openalex.org/W2053668343","https://openalex.org/W2171986175","https://openalex.org/W2089791793","https://openalex.org/W2895652696","https://openalex.org/W4327744209"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"have":[4],"analyzed":[5,126],"the":[6,17,41,101,142,145,151],"impact":[7],"of":[8,21,85,92,97,104,115,123,144],"gate":[9,112],"dielectric,":[10],"doping":[11,133],"concentration":[12,134],"and":[13,19,49,61,95,121,135],"channel":[14,42,64,102,136],"engineering":[15],"on":[16],"characteristics":[18,60,120],"sensitivity":[20,122],"Gate":[22],"Inside":[23],"Junctionless":[24,51],"Transistor":[25,52],"(GI-JLT).":[26],"A":[27],"numerical":[28],"TCAD":[29],"device":[30],"simulator":[31],"3-D":[32],"ATLAS":[33],"version":[34],"2.10.18.R":[35],"shows":[36],"that":[37],"GI-JLT":[38,55,124],"can":[39],"deplete":[40],"carriers":[43],"more":[44],"effectively":[45],"compared":[46],"with":[47,73,107],"tri-gate":[48],"Gate-All-Around":[50],"(GAA-JLT).":[53],"The":[54,119,138],"transistor":[56,72],"exhibits":[57],"good":[58],"transfer":[59],"reduces":[62],"short":[63],"effect":[65],"(SCE)":[66],"than":[67],"a":[68,74],"conventional":[69,152],"inversion":[70,154],"mode":[71,155],"high":[75],"I":[76],"<sub":[77,81],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[78,82,88],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">ON</sub>":[79],"/I":[80],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">OFF</sub>":[83],"ratio":[84],"10":[86],"<sup":[87],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">11</sup>":[89],"subthreshold":[90],"swing":[91],"64":[93],"mV/dec":[94],"DIBL":[96],"35":[98],"mV":[99],"for":[100,149],"length":[103],"18":[105],"nm":[106],"Aluminum":[108],"Nitride":[109],"(AlN)":[110],"as":[111],"dielectric":[113,129,131],"material":[114],"thickness":[116],"1":[117],"nm.":[118],"are":[125],"by":[127],"varying":[128],"material,":[130],"thickness,":[132],"length.":[137],"simulation":[139],"results":[140],"indicate":[141],"suitability":[143],"proposed":[146],"novel":[147],"structure":[148],"replacing":[150],"CMOS":[153],"device.":[156]},"counts_by_year":[{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}