{"id":"https://openalex.org/W2537580567","doi":"https://doi.org/10.1109/essderc.2016.7599665","title":"Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability","display_name":"Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2537580567","doi":"https://doi.org/10.1109/essderc.2016.7599665","mag":"2537580567"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2016.7599665","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599665","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5026564300","display_name":"Nicola Ciocchini","orcid":null},"institutions":[{"id":"https://openalex.org/I93860229","display_name":"Politecnico di Milano","ror":"https://ror.org/01nffqt88","country_code":"IT","type":"education","lineage":["https://openalex.org/I93860229"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"N. Ciocchini","raw_affiliation_strings":["DEIB, Politecnico di Milano and IU.NET, Milano, Italy"],"affiliations":[{"raw_affiliation_string":"DEIB, Politecnico di Milano and IU.NET, Milano, Italy","institution_ids":["https://openalex.org/I93860229"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001731684","display_name":"Mario Laudato","orcid":"https://orcid.org/0000-0002-0277-9535"},"institutions":[{"id":"https://openalex.org/I93860229","display_name":"Politecnico di Milano","ror":"https://ror.org/01nffqt88","country_code":"IT","type":"education","lineage":["https://openalex.org/I93860229"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Laudato","raw_affiliation_strings":["DEIB, Politecnico di Milano and IU.NET, Milano, Italy"],"affiliations":[{"raw_affiliation_string":"DEIB, Politecnico di Milano and IU.NET, Milano, Italy","institution_ids":["https://openalex.org/I93860229"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051946676","display_name":"Andrea L. Lacaita","orcid":"https://orcid.org/0000-0003-0315-514X"},"institutions":[{"id":"https://openalex.org/I93860229","display_name":"Politecnico di Milano","ror":"https://ror.org/01nffqt88","country_code":"IT","type":"education","lineage":["https://openalex.org/I93860229"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. L. Lacaita","raw_affiliation_strings":["DEIB, Politecnico di Milano and IU.NET, Milano, Italy"],"affiliations":[{"raw_affiliation_string":"DEIB, Politecnico di Milano and IU.NET, Milano, Italy","institution_ids":["https://openalex.org/I93860229"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054173368","display_name":"Daniele Ielmini","orcid":"https://orcid.org/0000-0002-1853-1614"},"institutions":[{"id":"https://openalex.org/I93860229","display_name":"Politecnico di Milano","ror":"https://ror.org/01nffqt88","country_code":"IT","type":"education","lineage":["https://openalex.org/I93860229"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"D. Ielmini","raw_affiliation_strings":["Politecnico di Milano, Milano, Lombardia, IT"],"affiliations":[{"raw_affiliation_string":"Politecnico di Milano, Milano, Lombardia, IT","institution_ids":["https://openalex.org/I93860229"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062389329","display_name":"Mattia Boniardi","orcid":"https://orcid.org/0000-0001-9503-6927"},"institutions":[{"id":"https://openalex.org/I4210130962","display_name":"Micron (Italy)","ror":"https://ror.org/039m3s961","country_code":"IT","type":"company","lineage":["https://openalex.org/I11912373","https://openalex.org/I4210130962"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Boniardi","raw_affiliation_strings":["Micron Technology Inc, Vimercate, MB, Italy"],"affiliations":[{"raw_affiliation_string":"Micron Technology Inc, Vimercate, MB, Italy","institution_ids":["https://openalex.org/I4210130962"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055636673","display_name":"E. Varesi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210130962","display_name":"Micron (Italy)","ror":"https://ror.org/039m3s961","country_code":"IT","type":"company","lineage":["https://openalex.org/I11912373","https://openalex.org/I4210130962"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"E. Varesi","raw_affiliation_strings":["Micron Technology Inc, Vimercate, MB, Italy"],"affiliations":[{"raw_affiliation_string":"Micron Technology Inc, Vimercate, MB, Italy","institution_ids":["https://openalex.org/I4210130962"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045387691","display_name":"Paolo Fantini","orcid":"https://orcid.org/0000-0003-1674-3936"},"institutions":[{"id":"https://openalex.org/I4210130962","display_name":"Micron (Italy)","ror":"https://ror.org/039m3s961","country_code":"IT","type":"company","lineage":["https://openalex.org/I11912373","https://openalex.org/I4210130962"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"P. Fantini","raw_affiliation_strings":["Micron Technology Inc, Vimercate, MB, Italy"],"affiliations":[{"raw_affiliation_string":"Micron Technology Inc, Vimercate, MB, Italy","institution_ids":["https://openalex.org/I4210130962"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5026564300"],"corresponding_institution_ids":["https://openalex.org/I93860229"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.10874091,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"98","issue":null,"first_page":"377","last_page":"380"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9955000281333923,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/phase-change-memory","display_name":"Phase-change memory","score":0.8779053688049316},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.789922833442688},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6393455862998962},{"id":"https://openalex.org/keywords/chalcogenide","display_name":"Chalcogenide","score":0.4930882155895233},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.4370206594467163},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4274485409259796},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.38012978434562683},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3692871034145355},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3599470853805542},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3478042483329773},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.2837488353252411},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12829983234405518},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.11937475204467773}],"concepts":[{"id":"https://openalex.org/C64142963","wikidata":"https://www.wikidata.org/wiki/Q1153902","display_name":"Phase-change memory","level":3,"score":0.8779053688049316},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.789922833442688},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6393455862998962},{"id":"https://openalex.org/C2778177714","wikidata":"https://www.wikidata.org/wiki/Q898920","display_name":"Chalcogenide","level":2,"score":0.4930882155895233},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.4370206594467163},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4274485409259796},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38012978434562683},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3692871034145355},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3599470853805542},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3478042483329773},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2837488353252411},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12829983234405518},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.11937475204467773},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/essderc.2016.7599665","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599665","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},{"id":"pmh:oai:re.public.polimi.it:11311/1026962","is_oa":false,"landing_page_url":"http://hdl.handle.net/11311/1026962","pdf_url":null,"source":{"id":"https://openalex.org/S4306400312","display_name":"Virtual Community of Pathological Anatomy (University of Castilla La Mancha)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I79189158","host_organization_name":"University of Castilla-La Mancha","host_organization_lineage":["https://openalex.org/I79189158"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2006798699","https://openalex.org/W2008925727","https://openalex.org/W2051133151"],"related_works":["https://openalex.org/W1972678038","https://openalex.org/W2086937600","https://openalex.org/W1551436306","https://openalex.org/W2091588437","https://openalex.org/W1990827130","https://openalex.org/W2094541679","https://openalex.org/W2089890946","https://openalex.org/W2009116015","https://openalex.org/W2110321764","https://openalex.org/W1983958623"],"abstract_inverted_index":{"Phase":[0],"change":[1],"memory":[2,16],"(PCM)":[3],"has":[4],"reached":[5],"the":[6,73],"status":[7],"of":[8],"mature":[9],"technology":[10],"for":[11,21],"stand-alone,":[12],"embedded,":[13],"and":[14,33,40,58,63,80,90],"storage-class":[15],"(SCM).":[17],"A":[18],"key":[19],"requirement":[20],"these":[22],"applications":[23],"is":[24,88],"stability":[25],"at":[26,85],"high":[27,86],"temperature":[28],"(T)":[29],"during":[30],"soldering,":[31],"packaging":[32],"operation.":[34],"To":[35],"this":[36],"aim,":[37],"new":[38],"materials":[39],"algorithms":[41],"to":[42],"improve":[43],"reliability":[44,84],"are":[45,67],"essential.":[46],"Here":[47],"we":[48],"demonstrate":[49],"bipolar":[50],"switching":[51,65],"in":[52,55,72],"PCM":[53],"resulting":[54],"low-current":[56],"operation":[57],"excellent":[59],"high-T":[60],"reliability.":[61],"DC":[62],"pulsed":[64],"characteristics":[66],"explained":[68,91],"by":[69,78,92],"ion":[70],"migration":[71],"chalcogenide":[74],"layer,":[75],"as":[76],"supported":[77],"TEM":[79],"T-dependent":[81],"studies.":[82],"Excellent":[83],"T":[87],"demonstrated":[89],"a":[93],"physical":[94],"model.":[95]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}