{"id":"https://openalex.org/W1991386021","doi":"https://doi.org/10.1109/essderc.2013.6818858","title":"Effect of ions presence in the SiOCH inter metal dielectric structure","display_name":"Effect of ions presence in the SiOCH inter metal dielectric structure","publication_year":2013,"publication_date":"2013-09-01","ids":{"openalex":"https://openalex.org/W1991386021","doi":"https://doi.org/10.1109/essderc.2013.6818858","mag":"1991386021"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2013.6818858","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2013.6818858","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"preprint","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5050532593","display_name":"B. Rebuffat","orcid":null},"institutions":[{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I3132279224","https://openalex.org/I4210098836","https://openalex.org/I4210112016"]},{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"B. Rebuffat","raw_affiliation_strings":["IM2NP (UMR 7334), Marseille, France","STMicroelectronics, 190 Avenue C\u00e9lestin Coq, Rousset, France"],"affiliations":[{"raw_affiliation_string":"IM2NP (UMR 7334), Marseille, France","institution_ids":["https://openalex.org/I4210112016"]},{"raw_affiliation_string":"STMicroelectronics, 190 Avenue C\u00e9lestin Coq, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047086663","display_name":"V. Della Marca","orcid":"https://orcid.org/0000-0003-3761-8122"},"institutions":[{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I3132279224","https://openalex.org/I4210098836","https://openalex.org/I4210112016"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"V. Della Marca","raw_affiliation_strings":["IM2NP (UMR 7334), Marseille, France","IM2NP (UMR 7334), Avenue Escadrille Normandie Niemen, Marseille, France"],"affiliations":[{"raw_affiliation_string":"IM2NP (UMR 7334), Marseille, France","institution_ids":["https://openalex.org/I4210112016"]},{"raw_affiliation_string":"IM2NP (UMR 7334), Avenue Escadrille Normandie Niemen, Marseille, France","institution_ids":["https://openalex.org/I4210112016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060736866","display_name":"Pascal Le Masson","orcid":"https://orcid.org/0000-0002-3835-2875"},"institutions":[{"id":"https://openalex.org/I201841394","display_name":"Universit\u00e9 C\u00f4te d'Azur","ror":"https://ror.org/019tgvf94","country_code":"FR","type":"education","lineage":["https://openalex.org/I201841394"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"P. Masson","raw_affiliation_strings":["Universit\u00e9 de Nice Sophia-Antipolis, Biot, France","Universit\u00e9 de Nice Sophia-Antipolis, Parc de Sophia Antipolis, Biot, France"],"affiliations":[{"raw_affiliation_string":"Universit\u00e9 de Nice Sophia-Antipolis, Biot, France","institution_ids":["https://openalex.org/I201841394"]},{"raw_affiliation_string":"Universit\u00e9 de Nice Sophia-Antipolis, Parc de Sophia Antipolis, Biot, France","institution_ids":["https://openalex.org/I201841394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109438235","display_name":"J.-L. Ogier","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J.-L. Ogier","raw_affiliation_strings":["STMicroelectronics, Crolles, FR","STMicroelectronics, 190 Avenue C\u00e9lestin Coq, Rousset, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, FR","institution_ids":[]},{"raw_affiliation_string":"STMicroelectronics, 190 Avenue C\u00e9lestin Coq, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010080672","display_name":"M. Mantelli","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"M. Mantelli","raw_affiliation_strings":["STMicroelectronics, Rousset, France","STMicroelectronics, 190 Avenue C\u00e9lestin Coq, Rousset, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"STMicroelectronics, 190 Avenue C\u00e9lestin Coq, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052207817","display_name":"Olivier Paulet","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"O. Paulet","raw_affiliation_strings":["STMicroelectronics, Rousset, France","STMicroelectronics, 190 Avenue C\u00e9lestin Coq, Rousset, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"STMicroelectronics, 190 Avenue C\u00e9lestin Coq, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074646852","display_name":"Leonardo L\u00f3pez","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"L. Lopez","raw_affiliation_strings":["STMicroelectronics, Rousset, France","STMicroelectronics, 190 Avenue C\u00e9lestin Coq, Rousset, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"STMicroelectronics, 190 Avenue C\u00e9lestin Coq, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5043533636","display_name":"R. Laffont","orcid":null},"institutions":[{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I3132279224","https://openalex.org/I4210098836","https://openalex.org/I4210112016"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"R. Laffont","raw_affiliation_strings":["IM2NP (UMR 7334), Marseille, France","IM2NP (UMR 7334), Avenue Escadrille Normandie Niemen, Marseille, France"],"affiliations":[{"raw_affiliation_string":"IM2NP (UMR 7334), Marseille, France","institution_ids":["https://openalex.org/I4210112016"]},{"raw_affiliation_string":"IM2NP (UMR 7334), Avenue Escadrille Normandie Niemen, Marseille, France","institution_ids":["https://openalex.org/I4210112016"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5050532593"],"corresponding_institution_ids":["https://openalex.org/I4210104693","https://openalex.org/I4210112016"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.06674185,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"218","last_page":"221"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7310177087783813},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.682822048664093},{"id":"https://openalex.org/keywords/thermal-conduction","display_name":"Thermal conduction","score":0.6493415236473083},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6114667057991028},{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.5684813261032104},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.5678057670593262},{"id":"https://openalex.org/keywords/ionic-bonding","display_name":"Ionic bonding","score":0.5499269366264343},{"id":"https://openalex.org/keywords/ion","display_name":"Ion","score":0.5361933708190918},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.5343897342681885},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.39791420102119446},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.38797926902770996},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.26531851291656494},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.22984063625335693},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.21852517127990723},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.21719089150428772},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.16200733184814453},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.061938077211380005},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.05014193058013916}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7310177087783813},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.682822048664093},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.6493415236473083},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6114667057991028},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.5684813261032104},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.5678057670593262},{"id":"https://openalex.org/C2182769","wikidata":"https://www.wikidata.org/wiki/Q62500","display_name":"Ionic bonding","level":3,"score":0.5499269366264343},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.5361933708190918},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.5343897342681885},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.39791420102119446},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.38797926902770996},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.26531851291656494},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.22984063625335693},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.21852517127990723},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.21719089150428772},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.16200733184814453},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.061938077211380005},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.05014193058013916},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/essderc.2013.6818858","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2013.6818858","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},{"id":"pmh:oai:HAL:hal-01760568v1","is_oa":false,"landing_page_url":"https://hal.science/hal-01760568","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL (Le Centre pour la Communication Scientifique Directe)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1294671590","host_organization_name":"Centre National de la Recherche Scientifique","host_organization_lineage":["https://openalex.org/I1294671590"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"ESSDERC 2013 - 43rd European Solid State Device Research Conference, Sep 2013, Bucharest, France. ⟨10.1109/ESSDERC.2013.6818858⟩","raw_type":"Conference papers"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8100000023841858,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1606722225","https://openalex.org/W1973685869","https://openalex.org/W2003765188","https://openalex.org/W2055916365","https://openalex.org/W2070792739","https://openalex.org/W2086672862","https://openalex.org/W2155586222","https://openalex.org/W2328407804","https://openalex.org/W6643737029"],"related_works":["https://openalex.org/W2019750744","https://openalex.org/W2613535449","https://openalex.org/W2051048385","https://openalex.org/W2104699544","https://openalex.org/W2027836115","https://openalex.org/W1995809631","https://openalex.org/W2162808514","https://openalex.org/W2546473172","https://openalex.org/W2099681566","https://openalex.org/W2050204787"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"the":[3,55,99],"electrical":[4,42,57,102],"instabilities":[5,15],"of":[6,91,101,115],"Inter":[7],"Metal":[8],"Dielectric":[9,107],"(IMD)":[10],"SiOCH":[11,95],"are":[12,62],"investigated.":[13],"These":[14],"concern":[16],"leakage":[17,29,50,117],"current":[18,30,51,118],"between":[19],"metal":[20],"lines":[21],"and":[22,40,49,81,119],"dielectric":[23],"breakdown.":[24],"At":[25,37,64],"room":[26],"temperature":[27,39],"IMD":[28],"tends":[31],"to":[32],"increase":[33],"with":[34],"waiting":[35],"time.":[36],"high":[38,72],"without":[41],"stress,":[43],"a":[44,113],"defect":[45],"recovering":[46],"phenomenon":[47],"occurs":[48],"decreases.":[52],"Depending":[53],"on":[54],"applied":[56],"field,":[58,66,74],"different":[59],"conduction":[60,68,76],"mechanisms":[61],"activated.":[63],"low":[65],"Ionic":[67],"predominates,":[69],"whereas":[70],"at":[71],"electric":[73],"Poole-Frenkel":[75],"is":[77,87,96,110],"predominant.":[78],"Comparing":[79],"data":[80],"simulation":[82],"results,":[83],"ion":[84],"activation":[85],"energy":[86],"estimated.":[88],"Then,":[89],"presence":[90],"alkaline":[92],"ions":[93],"in":[94],"suggested":[97],"as":[98,112],"cause":[100],"instabilities.":[103],"Finally,":[104],"Time":[105],"Dependent":[106],"Breakdown":[108],"(TDDB)":[109],"modeled":[111],"function":[114],"initial":[116],"stress":[120],"voltage":[121],"bias.":[122]},"counts_by_year":[],"updated_date":"2026-03-20T23:20:44.827607","created_date":"2025-10-10T00:00:00"}