{"id":"https://openalex.org/W2086999256","doi":"https://doi.org/10.1109/essderc.2012.6343394","title":"High voltage low R<sub>on</sub> in-situ SiN/Al<sub>0.35</sub>GaN<sub>0.65</sub>/GaN-on-Si power HEMTs operation up to 300\u00b0C","display_name":"High voltage low R<sub>on</sub> in-situ SiN/Al<sub>0.35</sub>GaN<sub>0.65</sub>/GaN-on-Si power HEMTs operation up to 300\u00b0C","publication_year":2012,"publication_date":"2012-09-01","ids":{"openalex":"https://openalex.org/W2086999256","doi":"https://doi.org/10.1109/essderc.2012.6343394","mag":"2086999256"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2012.6343394","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2012.6343394","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051334872","display_name":"A. Fontser\u00e8","orcid":null},"institutions":[{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]},{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":true,"raw_author_name":"A. Fontsere","raw_affiliation_strings":["Department dEnginyeria Electr\u00f3nica, UPC, Catalunya, Barcelona, Spain","IMB-CNM, CSIC, Catalunya, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Department dEnginyeria Electr\u00f3nica, UPC, Catalunya, Barcelona, Spain","institution_ids":["https://openalex.org/I9617848"]},{"raw_affiliation_string":"IMB-CNM, CSIC, Catalunya, Barcelona, Spain","institution_ids":["https://openalex.org/I4210160312"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066438326","display_name":"Amador P\u00e9rez\u2010Tom\u00e1s","orcid":"https://orcid.org/0000-0002-0551-3142"},"institutions":[{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"A. Perez-Tomas","raw_affiliation_strings":["IMB-CNM, CSIC, Catalunya, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"IMB-CNM, CSIC, Catalunya, Barcelona, Spain","institution_ids":["https://openalex.org/I4210160312"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012359906","display_name":"Philippe Godignon","orcid":"https://orcid.org/0000-0002-9273-9819"},"institutions":[{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"P. Godignon","raw_affiliation_strings":["IMB-CNM, CSIC, Catalunya, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"IMB-CNM, CSIC, Catalunya, Barcelona, Spain","institution_ids":["https://openalex.org/I4210160312"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050363894","display_name":"Jos\u00e9 del R. Mill\u00e1n","orcid":"https://orcid.org/0000-0001-5819-1522"},"institutions":[{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"J. Millan","raw_affiliation_strings":["IMB-CNM, CSIC, Catalunya, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"IMB-CNM, CSIC, Catalunya, Barcelona, Spain","institution_ids":["https://openalex.org/I4210160312"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021212630","display_name":"J. M. Parsey","orcid":null},"institutions":[{"id":"https://openalex.org/I4210110772","display_name":"ON Semiconductor (Belgium)","ror":"https://ror.org/0212gej90","country_code":"BE","type":"company","lineage":["https://openalex.org/I100625452","https://openalex.org/I4210110772"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"J. M. Parsey","raw_affiliation_strings":["Power Technology Center, Westerring, ON Semiconductor, Oudenaarde, Belgium"],"affiliations":[{"raw_affiliation_string":"Power Technology Center, Westerring, ON Semiconductor, Oudenaarde, Belgium","institution_ids":["https://openalex.org/I4210110772"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109149924","display_name":"P. Moens","orcid":"https://orcid.org/0000-0002-7799-6905"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P. Moens","raw_affiliation_strings":["ON Semiconductor, Phoenix, AZ, USA"],"affiliations":[{"raw_affiliation_string":"ON Semiconductor, Phoenix, AZ, USA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5051334872"],"corresponding_institution_ids":["https://openalex.org/I4210160312","https://openalex.org/I9617848"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.11135077,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"174","issue":null,"first_page":"306","last_page":"309"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5186131000518799},{"id":"https://openalex.org/keywords/saturation","display_name":"Saturation (graph theory)","score":0.49844980239868164},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4910149574279785},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4679625928401947},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.46498367190361023},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3892746567726135},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.34802839159965515},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.20385652780532837},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.1797119677066803},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11565923690795898},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.09100785851478577}],"concepts":[{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5186131000518799},{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.49844980239868164},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4910149574279785},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4679625928401947},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.46498367190361023},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3892746567726135},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.34802839159965515},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.20385652780532837},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1797119677066803},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11565923690795898},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.09100785851478577},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C114614502","wikidata":"https://www.wikidata.org/wiki/Q76592","display_name":"Combinatorics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2012.6343394","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2012.6343394","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.699999988079071,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1975109220","https://openalex.org/W1978357318","https://openalex.org/W1979768169","https://openalex.org/W2015642995","https://openalex.org/W2020085897","https://openalex.org/W2034279015","https://openalex.org/W2039438868","https://openalex.org/W2074419573","https://openalex.org/W2077371130","https://openalex.org/W2099582823","https://openalex.org/W2122531807","https://openalex.org/W2136322328","https://openalex.org/W2167798274","https://openalex.org/W2310426558"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W1998662473","https://openalex.org/W1988252515","https://openalex.org/W2075391483","https://openalex.org/W2742348144","https://openalex.org/W2038820605","https://openalex.org/W1985417357","https://openalex.org/W2115053376","https://openalex.org/W2367528910","https://openalex.org/W1991489478"],"abstract_inverted_index":{"This":[0],"paper":[1],"reports":[2],"some":[3],"aspects":[4],"of":[5,17,33,56,70,82,103],"major":[6],"practical":[7],"interest":[8],"now":[9],"that":[10,66],"GaN":[11],"HEMTs":[12],"are":[13,129],"in":[14],"the":[15,93,104,107,111,122,143],"onset":[16],"commercialization":[18],"for":[19,113],"high":[20],"voltage":[21,109],"applications":[22],"(V":[23],"<sub":[24,43,47,84],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[25,44,48,85],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">B</sub>":[26],">;":[27],"300":[28],"V).":[29],"The":[30],"device":[31],"reproducibility":[32],"900":[34],"V-class":[35],"MIS-HEMTs":[36],"with":[37],"a":[38,79,118],"thin":[39],"in-situ":[40],"grown":[41],"Si":[42],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sub>":[45],"N":[46],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">4</sub>":[49],"gate":[50,124],"insulator":[51],"is":[52,65],"investigated":[53],"by":[54],"means":[55],"wafer":[57,77],"mapping":[58],"and":[59,110,125,139],"high-T":[60],"stress.":[61],"A":[62],"remarkable":[63],"result":[64],"an":[67,73,99],"exceptional":[68],"yield":[69],"99%":[71],"across":[72],"entire":[74],"4-inch":[75],"AlGaN/GaN-on-Si":[76],"when":[78],"reverse":[80,120],"test":[81],"V":[83,89,138],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">ds</sub>":[86],"=":[87],"100":[88],"was":[90,97],"performed.":[91],"In":[92],"same":[94],"sense,":[95],"it":[96],"found":[98],"impressive":[100],"low":[101,144],"dispersion":[102],"threshold":[105],"voltage,":[106],"saturation":[108],"on-resistance":[112],"120":[114],"devices.":[115],"Besides,":[116],"under":[117],"DC":[119],"test,":[121],"typical":[123],"drain":[126,145],"leakage":[127],"currents":[128],"negligible":[130],"(I":[131],"<;":[132],"1":[133],"\u03bcA/mm)":[134],"up":[135,147],"to":[136,148],"500":[137],"temperature":[140],"independent":[141],"(at":[142],"bias)":[146],"250\u00b0C.":[149]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}