{"id":"https://openalex.org/W2070654632","doi":"https://doi.org/10.1109/essderc.2012.6343385","title":"Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements","display_name":"Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements","publication_year":2012,"publication_date":"2012-09-01","ids":{"openalex":"https://openalex.org/W2070654632","doi":"https://doi.org/10.1109/essderc.2012.6343385","mag":"2070654632"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2012.6343385","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2012.6343385","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"preprint","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5060403742","display_name":"Laurent Brunel","orcid":"https://orcid.org/0000-0003-0866-8964"},"institutions":[{"id":"https://openalex.org/I4210160189","display_name":"Institut Polytechnique de Bordeaux","ror":"https://ror.org/054qv7y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I4210157089","display_name":"Laboratoire de l'Int\u00e9gration du Mat\u00e9riau au Syst\u00e8me","ror":"https://ror.org/04nabhy78","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I15057530","https://openalex.org/I4210091158","https://openalex.org/I4210095849","https://openalex.org/I4210157089","https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I4210140624","display_name":"United Monolithic Semiconductor (France)","ror":"https://ror.org/034zb3z40","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210140624"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"funder","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"L. Brunel","raw_affiliation_strings":["IMS laboratory, UMR, CNRS, Talence, France","United Monolithic Semiconductors, Villebon-sur-Yvette, France"],"affiliations":[{"raw_affiliation_string":"IMS laboratory, UMR, CNRS, Talence, France","institution_ids":["https://openalex.org/I4210157089","https://openalex.org/I4210160189","https://openalex.org/I1294671590"]},{"raw_affiliation_string":"United Monolithic Semiconductors, Villebon-sur-Yvette, France","institution_ids":["https://openalex.org/I4210140624"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112907689","display_name":"Nathalie Malbert","orcid":null},"institutions":[{"id":"https://openalex.org/I4210157089","display_name":"Laboratoire de l'Int\u00e9gration du Mat\u00e9riau au Syst\u00e8me","ror":"https://ror.org/04nabhy78","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I15057530","https://openalex.org/I4210091158","https://openalex.org/I4210095849","https://openalex.org/I4210157089","https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"funder","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210160189","display_name":"Institut Polytechnique de Bordeaux","ror":"https://ror.org/054qv7y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I4210160189"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"N. Malbert","raw_affiliation_strings":["IMS laboratory, UMR, CNRS, Talence, France"],"affiliations":[{"raw_affiliation_string":"IMS laboratory, UMR, CNRS, Talence, France","institution_ids":["https://openalex.org/I4210157089","https://openalex.org/I4210160189","https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114128498","display_name":"Arnaud Curutchet","orcid":null},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"funder","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210157089","display_name":"Laboratoire de l'Int\u00e9gration du Mat\u00e9riau au Syst\u00e8me","ror":"https://ror.org/04nabhy78","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I15057530","https://openalex.org/I4210091158","https://openalex.org/I4210095849","https://openalex.org/I4210157089","https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I4210160189","display_name":"Institut Polytechnique de Bordeaux","ror":"https://ror.org/054qv7y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I4210160189"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A. Curutchet","raw_affiliation_strings":["IMS laboratory, UMR, CNRS, Talence, France"],"affiliations":[{"raw_affiliation_string":"IMS laboratory, UMR, CNRS, Talence, France","institution_ids":["https://openalex.org/I4210157089","https://openalex.org/I4210160189","https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111474938","display_name":"N. Labat","orcid":null},"institutions":[{"id":"https://openalex.org/I4210160189","display_name":"Institut Polytechnique de Bordeaux","ror":"https://ror.org/054qv7y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I4210157089","display_name":"Laboratoire de l'Int\u00e9gration du Mat\u00e9riau au Syst\u00e8me","ror":"https://ror.org/04nabhy78","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I15057530","https://openalex.org/I4210091158","https://openalex.org/I4210095849","https://openalex.org/I4210157089","https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"funder","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"N. Labat","raw_affiliation_strings":["IMS laboratory, UMR, CNRS, Talence, France"],"affiliations":[{"raw_affiliation_string":"IMS laboratory, UMR, CNRS, Talence, France","institution_ids":["https://openalex.org/I4210157089","https://openalex.org/I4210160189","https://openalex.org/I1294671590"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113629672","display_name":"B. Lambert","orcid":null},"institutions":[{"id":"https://openalex.org/I4210160189","display_name":"Institut Polytechnique de Bordeaux","ror":"https://ror.org/054qv7y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"funder","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210157089","display_name":"Laboratoire de l'Int\u00e9gration du Mat\u00e9riau au Syst\u00e8me","ror":"https://ror.org/04nabhy78","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I15057530","https://openalex.org/I4210091158","https://openalex.org/I4210095849","https://openalex.org/I4210157089","https://openalex.org/I4210160189"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"B. Lambert","raw_affiliation_strings":["IMS laboratory, UMR, CNRS, Talence, France"],"affiliations":[{"raw_affiliation_string":"IMS laboratory, UMR, CNRS, Talence, France","institution_ids":["https://openalex.org/I4210157089","https://openalex.org/I4210160189","https://openalex.org/I1294671590"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5060403742"],"corresponding_institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210140624","https://openalex.org/I4210157089","https://openalex.org/I4210160189"],"apc_list":null,"apc_paid":null,"fwci":0.5608,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.6947806,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"270","last_page":"273"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/isothermal-process","display_name":"Isothermal process","score":0.6979286670684814},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.6603691577911377},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6457979679107666},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5631630420684814},{"id":"https://openalex.org/keywords/characterization","display_name":"Characterization (materials science)","score":0.5536723732948303},{"id":"https://openalex.org/keywords/deep-level-transient-spectroscopy","display_name":"Deep-level transient spectroscopy","score":0.5390050411224365},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5170855522155762},{"id":"https://openalex.org/keywords/activation-energy","display_name":"Activation energy","score":0.4962769150733948},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.42581531405448914},{"id":"https://openalex.org/keywords/spectroscopy","display_name":"Spectroscopy","score":0.4186059236526489},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.3682807981967926},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1926117241382599},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.19178178906440735},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.18677201867103577},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.17006346583366394},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.14775583148002625},{"id":"https://openalex.org/keywords/physical-chemistry","display_name":"Physical chemistry","score":0.1327500343322754},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.09268447756767273}],"concepts":[{"id":"https://openalex.org/C133347239","wikidata":"https://www.wikidata.org/wiki/Q486921","display_name":"Isothermal process","level":2,"score":0.6979286670684814},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.6603691577911377},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6457979679107666},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5631630420684814},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.5536723732948303},{"id":"https://openalex.org/C2780080961","wikidata":"https://www.wikidata.org/wiki/Q176282","display_name":"Deep-level transient spectroscopy","level":3,"score":0.5390050411224365},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5170855522155762},{"id":"https://openalex.org/C95121573","wikidata":"https://www.wikidata.org/wiki/Q190474","display_name":"Activation energy","level":2,"score":0.4962769150733948},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.42581531405448914},{"id":"https://openalex.org/C32891209","wikidata":"https://www.wikidata.org/wiki/Q483666","display_name":"Spectroscopy","level":2,"score":0.4186059236526489},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3682807981967926},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1926117241382599},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.19178178906440735},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.18677201867103577},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17006346583366394},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.14775583148002625},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.1327500343322754},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.09268447756767273},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/essderc.2012.6343385","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2012.6343385","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},{"id":"pmh:oai:HAL:hal-00987040v1","is_oa":false,"landing_page_url":"https://hal.science/hal-00987040","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL (Le Centre pour la Communication Scientifique Directe)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1294671590","host_organization_name":"Centre National de la Recherche Scientifique","host_organization_lineage":["https://openalex.org/I1294671590"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"essderc 2012, Sep 2012, Bordeaux, France. pp.270-273","raw_type":"Conference papers"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.7300000190734863,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1777366045","https://openalex.org/W1965817159","https://openalex.org/W2019388673","https://openalex.org/W2041714088","https://openalex.org/W2066285523","https://openalex.org/W2068502686","https://openalex.org/W2102774840","https://openalex.org/W2133351404","https://openalex.org/W2157881707","https://openalex.org/W2157958892","https://openalex.org/W6638276184"],"related_works":["https://openalex.org/W2035529511","https://openalex.org/W2920899537","https://openalex.org/W2390503795","https://openalex.org/W2028866325","https://openalex.org/W2532319773","https://openalex.org/W2041194832","https://openalex.org/W1976433998","https://openalex.org/W2389254568","https://openalex.org/W1989827726","https://openalex.org/W2559970317"],"abstract_inverted_index":{"This":[0],"study":[1],"reports":[2],"on":[3,13,23,43],"detection":[4],"and":[5,20,39,47,58,75,84],"characterization":[6],"of":[7,10,50,82],"parasitic":[8],"effects":[9,22],"AlGaN/GaN":[11],"HEMTs":[12],"SiC":[14],"substrate.":[15],"First,":[16],"experimental":[17],"conditions":[18],"impact":[19],"temperature":[21],"static":[24],"I":[25],"<sub":[26,30],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[27,31],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DS</sub>":[28,32],"(V":[29],")":[33],"characteristics":[34],"are":[35,54,63],"studied":[36],"between":[37],"160":[38],"390K.":[40],"Then,":[41],"dependences":[42],"temperature,":[44],"electric":[45],"field":[46],"integration":[48],"time":[49],"the":[51],"kink":[52],"effect":[53],"demonstrated":[55],"with":[56,79],"DC":[57],"pulsed":[59],"measurements.":[60],"Two":[61],"traps":[62],"identified":[64],"by":[65],"isothermal":[66],"drain":[67],"current":[68],"transient":[69],"spectroscopy":[70],":":[71],"an":[72],"emission":[73],"process":[74,78],"a":[76],"capture":[77],"activation":[80],"energy":[81],"0.58eV":[83],"0.64eV":[85],"respectively.":[86]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-04-05T17:49:38.594831","created_date":"2025-10-10T00:00:00"}