{"id":"https://openalex.org/W1992292969","doi":"https://doi.org/10.1109/essderc.2012.6343337","title":"Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells","display_name":"Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells","publication_year":2012,"publication_date":"2012-09-01","ids":{"openalex":"https://openalex.org/W1992292969","doi":"https://doi.org/10.1109/essderc.2012.6343337","mag":"1992292969"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2012.6343337","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2012.6343337","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083596674","display_name":"Vita Pi\u2010Ho Hu","orcid":"https://orcid.org/0000-0002-6216-214X"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Vita Pi-Ho Hu","raw_affiliation_strings":["Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","Department of Electronics Engineering & Institute of Electronics National Chiao-Tung University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics National Chiao-Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084582698","display_name":"Ming-Long Fan","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ming-Long Fan","raw_affiliation_strings":["Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","Department of Electronics Engineering & Institute of Electronics National Chiao-Tung University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics National Chiao-Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025664346","display_name":"Pin Su","orcid":"https://orcid.org/0000-0002-8213-4103"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Pin Su","raw_affiliation_strings":["Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","Department of Electronics Engineering & Institute of Electronics National Chiao-Tung University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics National Chiao-Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111956726","display_name":"Ching-Te Chuang","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ching-Te Chuang","raw_affiliation_strings":["Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","Department of Electronics Engineering & Institute of Electronics National Chiao-Tung University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics National Chiao-Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5083596674"],"corresponding_institution_ids":["https://openalex.org/I148366613"],"apc_list":null,"apc_paid":null,"fwci":0.2455,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.57171349,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"77","last_page":"80"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8553147912025452},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5729138851165771},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4737050235271454},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.44688883423805237},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.421339750289917},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4094552993774414},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40266573429107666},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3823227286338806},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3311668634414673},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.32379990816116333},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2451358437538147}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8553147912025452},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5729138851165771},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4737050235271454},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.44688883423805237},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.421339750289917},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4094552993774414},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40266573429107666},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3823227286338806},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3311668634414673},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.32379990816116333},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2451358437538147},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2012.6343337","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2012.6343337","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5099999904632568,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1844672148","https://openalex.org/W1964389532","https://openalex.org/W1983357164","https://openalex.org/W1997395647","https://openalex.org/W2065267470","https://openalex.org/W2082402599","https://openalex.org/W2086648741","https://openalex.org/W2089116202","https://openalex.org/W2097527347","https://openalex.org/W2100933266","https://openalex.org/W2105522236","https://openalex.org/W2110290108","https://openalex.org/W2114131053","https://openalex.org/W2119553442","https://openalex.org/W2122666265","https://openalex.org/W2136307483","https://openalex.org/W2149237552","https://openalex.org/W6638927918"],"related_works":["https://openalex.org/W4392590355","https://openalex.org/W3151633427","https://openalex.org/W2212894501","https://openalex.org/W2793465010","https://openalex.org/W3024050170","https://openalex.org/W1976168335","https://openalex.org/W2109451123","https://openalex.org/W4378977321","https://openalex.org/W3211992815","https://openalex.org/W179354024"],"abstract_inverted_index":{"InGaAs-OI":[0],"and":[1,20,46,83,85],"GeOI":[2],"SRAM":[3,24,74,93],"cells":[4,25,75],"using":[5],"optimized":[6],"threshold":[7],"voltage":[8],"(Vt)":[9],"design":[10,36,42,59,78],"to":[11],"enhance":[12],"the":[13,41,66,91],"intrinsic":[14],"variation":[15],"immunity":[16],"of":[17],"high-performance":[18,52,92],"(super-threshold)":[19],"low-voltage":[21,29],"(near-/sub-threshold)":[22],"6T":[23],"are":[26],"presented.":[27],"For":[28,51],"SRAMs":[30,53,68],"operating":[31,54],"at":[32,55],"low":[33],"Vdd,":[34,57],"low-Vt":[35],"shows":[37,60],"smaller":[38,61],"variability":[39],"while":[40],"trade-off":[43],"between":[44],"performance":[45],"leakage":[47],"should":[48],"be":[49],"considered.":[50],"high":[56],"high-Vt":[58,70,77],"variability.":[62],"Moreover,":[63],"compared":[64],"with":[65,69,76],"SOI":[67],"design,":[71],"InGaAs-OI/GeOI":[72],"hetero-channel":[73],"exhibit":[79],"improved":[80],"Read/Write":[81],"stability":[82],"performance,":[84],"maintain":[86],"comparable":[87],"RSNM":[88],"variations":[89],"for":[90],"applications.":[94]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2014,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}