{"id":"https://openalex.org/W3142403821","doi":"https://doi.org/10.1109/esscirc.2009.5325952","title":"Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation","display_name":"Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation","publication_year":2009,"publication_date":"2009-09-01","ids":{"openalex":"https://openalex.org/W3142403821","doi":"https://doi.org/10.1109/esscirc.2009.5325952","mag":"3142403821"},"language":"en","primary_location":{"id":"doi:10.1109/esscirc.2009.5325952","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2009.5325952","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 Proceedings of ESSCIRC","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072024266","display_name":"Stefan Drapatz","orcid":null},"institutions":[{"id":"https://openalex.org/I62916508","display_name":"Technical University of Munich","ror":"https://ror.org/02kkvpp62","country_code":"DE","type":"education","lineage":["https://openalex.org/I62916508"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Stefan Drapatz","raw_affiliation_strings":["Institute for Technical Electronics, Technische Universit\u00e4t M\u00fcnchen, Munich, Germany"],"affiliations":[{"raw_affiliation_string":"Institute for Technical Electronics, Technische Universit\u00e4t M\u00fcnchen, Munich, Germany","institution_ids":["https://openalex.org/I62916508"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059422050","display_name":"Thomas Fischer","orcid":"https://orcid.org/0000-0002-8363-9613"},"institutions":[{"id":"https://openalex.org/I62916508","display_name":"Technical University of Munich","ror":"https://ror.org/02kkvpp62","country_code":"DE","type":"education","lineage":["https://openalex.org/I62916508"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Thomas Fischer","raw_affiliation_strings":["Institute for Technical Electronics, Technische Universit\u00e4t M\u00fcnchen, Munich, Germany"],"affiliations":[{"raw_affiliation_string":"Institute for Technical Electronics, Technische Universit\u00e4t M\u00fcnchen, Munich, Germany","institution_ids":["https://openalex.org/I62916508"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108495995","display_name":"Karl Hofmann","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Karl Hofmann","raw_affiliation_strings":["Infineon Technologies AG, Neubiberg, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007303066","display_name":"E. Amirante","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Ettore Amirante","raw_affiliation_strings":["Infineon Technologies AG, Neubiberg, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053025224","display_name":"Peter Huber","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Peter Huber","raw_affiliation_strings":["Infineon Technologies AG, Neubiberg, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069678175","display_name":"Martin Ostermayr","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Martin Ostermayr","raw_affiliation_strings":["Infineon Technologies AG, Neubiberg, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015790505","display_name":"Georg Georgakos","orcid":"https://orcid.org/0009-0006-4695-4637"},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Georg Georgakos","raw_affiliation_strings":["Infineon Technologies AG, Neubiberg, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5057693404","display_name":"Doris Schmitt-Landsiedel","orcid":null},"institutions":[{"id":"https://openalex.org/I62916508","display_name":"Technical University of Munich","ror":"https://ror.org/02kkvpp62","country_code":"DE","type":"education","lineage":["https://openalex.org/I62916508"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Doris Schmitt-Landsiedel","raw_affiliation_strings":["Institute for Technical Electronics, Technische Universit\u00e4t M\u00fcnchen, Munich, Germany"],"affiliations":[{"raw_affiliation_string":"Institute for Technical Electronics, Technische Universit\u00e4t M\u00fcnchen, Munich, Germany","institution_ids":["https://openalex.org/I62916508"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5072024266"],"corresponding_institution_ids":["https://openalex.org/I62916508"],"apc_list":null,"apc_paid":null,"fwci":1.4954,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.84644751,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"92","last_page":"95"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.7464697957038879},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7155076265335083},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5754218697547913},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5648719072341919},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.5191201567649841},{"id":"https://openalex.org/keywords/stability","display_name":"Stability (learning theory)","score":0.5147143006324768},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.506995439529419},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.4969222843647003},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.47441619634628296},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4512568414211273},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.44155025482177734},{"id":"https://openalex.org/keywords/scale","display_name":"Scale (ratio)","score":0.41340985894203186},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.37761443853378296},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.35721075534820557},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35122156143188477},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2421424388885498},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.21243920922279358},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.18516433238983154},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.09989407658576965}],"concepts":[{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.7464697957038879},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7155076265335083},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5754218697547913},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5648719072341919},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5191201567649841},{"id":"https://openalex.org/C112972136","wikidata":"https://www.wikidata.org/wiki/Q7595718","display_name":"Stability (learning theory)","level":2,"score":0.5147143006324768},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.506995439529419},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.4969222843647003},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.47441619634628296},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4512568414211273},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.44155025482177734},{"id":"https://openalex.org/C2778755073","wikidata":"https://www.wikidata.org/wiki/Q10858537","display_name":"Scale (ratio)","level":2,"score":0.41340985894203186},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.37761443853378296},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.35721075534820557},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35122156143188477},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2421424388885498},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21243920922279358},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.18516433238983154},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.09989407658576965},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/esscirc.2009.5325952","is_oa":false,"landing_page_url":"https://doi.org/10.1109/esscirc.2009.5325952","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 Proceedings of ESSCIRC","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1949058485","https://openalex.org/W1973081841","https://openalex.org/W2002612140","https://openalex.org/W2080326481","https://openalex.org/W2113488294","https://openalex.org/W6640586653","https://openalex.org/W6643245339"],"related_works":["https://openalex.org/W3150866391","https://openalex.org/W2112214579","https://openalex.org/W2310523918","https://openalex.org/W4200470254","https://openalex.org/W2118528827","https://openalex.org/W2154145758","https://openalex.org/W2110839220","https://openalex.org/W2534886762","https://openalex.org/W2164440002","https://openalex.org/W1967467072"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"read":[3,82,112],"margin":[4,115],"analysis":[5,43],"for":[6,35],"large":[7,45,76],"SRAM":[8],"arrays":[9,46,77],"with":[10],"a":[11,53,117],"fast":[12],"test":[13,55],"method":[14,63],"that":[15],"even":[16],"can":[17,78],"be":[18,79],"realized":[19],"in":[20,81,86,116],"dual-V":[21],"<sub":[22],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[23],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DD</sub>":[24],"product":[25],"chips.":[26],"Classical":[27],"Static":[28],"Noise":[29],"Margin":[30,39],"(SNM)":[31],"is":[32,108],"mostly":[33],"suitable":[34],"single-cell":[36],"simulation.":[37],"Read":[38],"(RM)":[40],"measurement":[41,59],"allows":[42],"of":[44,67,75,93,102],"and":[47,57,113],"correlates":[48],"to":[49],"SNM,":[50],"but":[51],"requires":[52],"dedicated":[54],"structure":[56],"long":[58],"time.":[60],"The":[61,73],"presented":[62],"analyzes":[64],"the":[65,91,94,100],"flipping":[66],"cells":[68],"over":[69],"varying":[70],"supply":[71],"voltage.":[72],"stability":[74],"characterized":[80],"as":[83,85],"well":[84],"hold":[87,114],"state":[88,92],"depending":[89],"on":[90,110],"access":[95],"transistors.":[96],"Applying":[97],"this":[98],"method,":[99],"impact":[101],"Negative":[103],"Bias":[104],"Temperature":[105],"Instability":[106],"(NBTI)":[107],"demonstrated":[109],"both":[111],"65":[118],"nm":[119],"low":[120],"power":[121],"technology.":[122]},"counts_by_year":[{"year":2019,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}