{"id":"https://openalex.org/W4401071696","doi":"https://doi.org/10.1109/drc61706.2024.10605251","title":"First Experimental Demonstration of Monolithic Bidirectional Switch Using GaN Current Aperture Vertical Electron Transistor (CAVET)","display_name":"First Experimental Demonstration of Monolithic Bidirectional Switch Using GaN Current Aperture Vertical Electron Transistor (CAVET)","publication_year":2024,"publication_date":"2024-06-24","ids":{"openalex":"https://openalex.org/W4401071696","doi":"https://doi.org/10.1109/drc61706.2024.10605251"},"language":"en","primary_location":{"id":"doi:10.1109/drc61706.2024.10605251","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc61706.2024.10605251","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5115596022","display_name":"Xiang-Yang Wen","orcid":"https://orcid.org/0009-0001-3594-0209"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"X. Wen","raw_affiliation_strings":["Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049108574","display_name":"Hayao Kasai","orcid":null},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. Kasai","raw_affiliation_strings":["Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5107950819","display_name":"K. Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Lee","raw_affiliation_strings":["Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010715644","display_name":"Maliha Noshin","orcid":"https://orcid.org/0000-0002-0736-6991"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Noshin","raw_affiliation_strings":["Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039532533","display_name":"Jaeyi Chun","orcid":"https://orcid.org/0000-0003-2514-1929"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Chun","raw_affiliation_strings":["Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036450839","display_name":"Srabanti Chowdhury","orcid":"https://orcid.org/0000-0001-8367-0461"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Chowdhury","raw_affiliation_strings":["Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5115596022"],"corresponding_institution_ids":["https://openalex.org/I97018004"],"apc_list":null,"apc_paid":null,"fwci":1.0635,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.75678306,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9544000029563904,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9544000029563904,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7138895988464355},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6575390696525574},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.6516287326812744},{"id":"https://openalex.org/keywords/aperture","display_name":"Aperture (computer memory)","score":0.6164109706878662},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6044529676437378},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.49160677194595337},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3977355360984802},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.24906465411186218},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.16284534335136414},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12078839540481567}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7138895988464355},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6575390696525574},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.6516287326812744},{"id":"https://openalex.org/C78336883","wikidata":"https://www.wikidata.org/wiki/Q4779385","display_name":"Aperture (computer memory)","level":2,"score":0.6164109706878662},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6044529676437378},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.49160677194595337},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3977355360984802},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.24906465411186218},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.16284534335136414},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12078839540481567},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc61706.2024.10605251","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc61706.2024.10605251","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5400000214576721,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2513937427","https://openalex.org/W4281259063","https://openalex.org/W4366774167","https://openalex.org/W4391407026"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W1982412832","https://openalex.org/W4244464241","https://openalex.org/W2384573129","https://openalex.org/W2351224547","https://openalex.org/W2358945257","https://openalex.org/W4318692582","https://openalex.org/W4368618351","https://openalex.org/W2065626896","https://openalex.org/W2006863447"],"abstract_inverted_index":{"Bidirectional":[0],"switches":[1],"(BSW)":[2],"are":[3,121,180],"extensively":[4],"employed":[5],"in":[6,10,25,44,108],"power":[7,36,118],"applications,":[8],"particularly":[9],"AC-AC":[11],"matrix":[12],"converters":[13],"and":[14,22,48,62,136,219],"solid-state":[15],"circuit":[16],"breakers.":[17],"They":[18],"facilitate":[19],"current":[20],"flow":[21],"voltage":[23],"blocking":[24],"both":[26],"directions":[27],"symmetrically.":[28],"Conventional":[29],"BSWs":[30,76,146],"without":[31],"monolithic":[32,75,210],"integration":[33],"comprise":[34],"discrete":[35],"transistors":[37,151],"with":[38,83,89,200],"anti-parallel":[39],"freewheeling":[40],"diodes,":[41],"which":[42],"results":[43],"additional":[45],"parasitic":[46],"effects":[47],"a":[49,90,112,130,194,209],"large":[50],"chip":[51],"area":[52],"[1]":[53],".":[54,95,116,206],"Wide":[55],"bandgap":[56],"semiconductors":[57],"including":[58],"Silicon":[59],"Carbide":[60],"(SiC)":[61],"Gallium":[63],"Nitride":[64],"(GaN)":[65],"have":[66,86,141,152],"been":[67,87,153],"investigated":[68],"for":[69,182,215],"building":[70],"monolithic-integrated":[71],"BSWs.":[72],"Particularly,":[73],"GaN-based":[74],"using":[77,212],"High":[78],"Electron":[79,177],"Mobility":[80],"Transistors":[81,178],"(HEMTs)":[82],"dual":[84],"gates":[85],"developed":[88],"shared":[91],"active":[92],"region":[93],"[2]":[94],"Owing":[96],"to":[97,160,187,196],"the":[98,109,161,216,220],"two-dimensional":[99],"electron":[100],"gas":[101],"(2DEG),":[102],"GaN":[103,170,173,213],"HEMTs":[104],"perform":[105],"reverse":[106,221],"conduction":[107,222],"absence":[110],"of":[111,163,223],"body":[113],"diode":[114],"[3]":[115],"Vertical":[117,176],"device":[119],"topologies":[120],"preferred":[122],"over":[123],"lateral":[124],"counterparts":[125],"by":[126,203],"reducing":[127],"on-resistance":[128],"at":[129],"given":[131],"breakdown":[132],"rating":[133],"[4]":[134,191],",":[135,156,158,192],"thus":[137],"bidirectional":[138],"vertical":[139,150,171],"devices":[140],"drawn":[142],"great":[143],"interest.":[144],"Monolithic":[145],"based":[147],"on":[148,169],"SiC":[149,198],"studied":[154],"[5":[155],"6]":[157],"but":[159],"best":[162],"our":[164],"knowledge,":[165],"no":[166],"reports":[167],"exist":[168],"devices.":[172],"Current":[174],"Aperture":[175],"(CAVETs)":[179],"favorable":[181],"MHz":[183],"high-frequency":[184],"switching":[185],"due":[186],"high":[188],"carrier":[189],"mobility":[190],"showing":[193],"potential":[195],"outperform":[197],"MOSFETs":[199],"lower":[201],"losses":[202],"simulation":[204],"[7]":[205],"We":[207],"demonstrated":[208],"BSW":[211],"CAVETs":[214,224],"first":[217],"time,":[218],"was":[225],"investigated.":[226]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1}],"updated_date":"2025-12-26T23:08:49.675405","created_date":"2025-10-10T00:00:00"}