{"id":"https://openalex.org/W4385192270","doi":"https://doi.org/10.1109/drc58590.2023.10187107","title":"Exploration and Exploitation of Strain Engineering in 2D-FETs","display_name":"Exploration and Exploitation of Strain Engineering in 2D-FETs","publication_year":2023,"publication_date":"2023-06-25","ids":{"openalex":"https://openalex.org/W4385192270","doi":"https://doi.org/10.1109/drc58590.2023.10187107"},"language":"en","primary_location":{"id":"doi:10.1109/drc58590.2023.10187107","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/drc58590.2023.10187107","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5014029408","display_name":"Ankit Kumar","orcid":"https://orcid.org/0000-0002-1168-3287"},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ankit Kumar","raw_affiliation_strings":["University of California,ECE Department,Santa Barbara,California,USA,93106"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California,ECE Department,Santa Barbara,California,USA,93106","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007764519","display_name":"Arnab Pal","orcid":"https://orcid.org/0000-0002-1744-3786"},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Arnab Pal","raw_affiliation_strings":["University of California,ECE Department,Santa Barbara,California,USA,93106"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California,ECE Department,Santa Barbara,California,USA,93106","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076555624","display_name":"Kamyar Parto","orcid":"https://orcid.org/0000-0002-6337-7767"},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kamyar Parto","raw_affiliation_strings":["University of California,ECE Department,Santa Barbara,California,USA,93106"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California,ECE Department,Santa Barbara,California,USA,93106","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016566027","display_name":"Wei Cao","orcid":"https://orcid.org/0000-0003-2556-3195"},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Wei Cao","raw_affiliation_strings":["University of California,ECE Department,Santa Barbara,California,USA,93106"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California,ECE Department,Santa Barbara,California,USA,93106","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075851236","display_name":"Kaustav Banerjee","orcid":"https://orcid.org/0000-0001-5344-0921"},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kaustav Banerjee","raw_affiliation_strings":["University of California,ECE Department,Santa Barbara,California,USA,93106"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California,ECE Department,Santa Barbara,California,USA,93106","institution_ids":["https://openalex.org/I154570441"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I154570441"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.14205263,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/strain-engineering","display_name":"Strain engineering","score":0.6943933367729187},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.6296892166137695},{"id":"https://openalex.org/keywords/van-der-waals-force","display_name":"van der Waals force","score":0.6235429644584656},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.4924860894680023},{"id":"https://openalex.org/keywords/density-functional-theory","display_name":"Density functional theory","score":0.4859229624271393},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4421652853488922},{"id":"https://openalex.org/keywords/band-gap","display_name":"Band gap","score":0.4365572929382324},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.39606818556785583},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3940718173980713},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3712143301963806},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3464873433113098},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3265777826309204},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3256562650203705},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.320629745721817},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24210640788078308},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.22159519791603088},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12984949350357056},{"id":"https://openalex.org/keywords/molecule","display_name":"Molecule","score":0.0985918939113617}],"concepts":[{"id":"https://openalex.org/C80487327","wikidata":"https://www.wikidata.org/wiki/Q1262549","display_name":"Strain engineering","level":3,"score":0.6943933367729187},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.6296892166137695},{"id":"https://openalex.org/C126061179","wikidata":"https://www.wikidata.org/wiki/Q189627","display_name":"van der Waals force","level":3,"score":0.6235429644584656},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4924860894680023},{"id":"https://openalex.org/C152365726","wikidata":"https://www.wikidata.org/wiki/Q1048589","display_name":"Density functional theory","level":2,"score":0.4859229624271393},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4421652853488922},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.4365572929382324},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.39606818556785583},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3940718173980713},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3712143301963806},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3464873433113098},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3265777826309204},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3256562650203705},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.320629745721817},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24210640788078308},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.22159519791603088},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12984949350357056},{"id":"https://openalex.org/C32909587","wikidata":"https://www.wikidata.org/wiki/Q11369","display_name":"Molecule","level":2,"score":0.0985918939113617},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc58590.2023.10187107","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/drc58590.2023.10187107","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","score":0.47999998927116394,"display_name":"Industry, innovation and infrastructure"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1509625286","https://openalex.org/W1777862677","https://openalex.org/W1912205236","https://openalex.org/W2082636487","https://openalex.org/W2325615515"],"related_works":["https://openalex.org/W2016023420","https://openalex.org/W1969178306","https://openalex.org/W4229082226","https://openalex.org/W2150857911","https://openalex.org/W4241994605","https://openalex.org/W2067605632","https://openalex.org/W1997084402","https://openalex.org/W2003780305","https://openalex.org/W2994126982","https://openalex.org/W3200237596"],"abstract_inverted_index":{"Two-dimensional":[0],"(2D)":[1],"van":[2],"der":[3],"Waals":[4],"semiconductors,":[5],"especially":[6],"transition-metal-dichalcogenides":[7],"(TMDs),":[8],"have":[9,96],"emerged":[10],"as":[11,49],"prospective":[12],"channel":[13,18],"materials":[14],"for":[15,101,109,212],"sub-10":[16],"nm":[17],"length":[19],"($L_{CH}$)":[20],"FETs":[21],"due":[22],"to":[23,67,76,121,143,220],"their":[24,32,145],"superior":[25],"scalability":[26],"and":[27,41,160,189,205,210],"low-power":[28],"characteristics":[29],"arising":[30],"from":[31],"large":[33],"bandgap,":[34],"suitable":[35],"effective":[36],"mass":[37],"($m^{\\ast}$),":[38],"atomic-scale":[39],"thickness,":[40],"pristine":[42],"interfaces,":[43],"w.r.t":[44],"conventional":[45],"(bulk)":[46],"semiconductors":[47],"such":[48,70,138],"silicon":[50],"[1].":[51],"Considering":[52],"the":[53,78,87,134,149,170,178,199,213,222],"performance":[54,79],"enhancements":[55],"observed":[56],"in":[57,93,148,227],"state-of-the-art":[58],"Si-MOSFETs":[59],"via":[60],"strain":[61,71,135,176,225],"engineering":[62,72,136,226],"[2],":[63],"it":[64],"is":[65,126],"fruitful":[66],"explore":[68],"if":[69],"can":[73,140],"be":[74],"exploited":[75],"enhance":[77],"of":[80,86,99,137,172,175,181,224],"2D-FETs,":[81],"by":[82,129,155,197],"modulating$m^{\\ast}$and":[83],"density-of-states":[84],"(DOS)":[85],"2D-TMDs.":[88],"Although":[89],"some":[90],"preliminary":[91],"work":[92,154],"this":[94,153],"direction":[95],"shown":[97],"modulation":[98],"mobility":[100,200],"a":[102,110,114],"few":[103],"TMDs":[104,182],"[3]":[105],"or":[106],"ballistic":[107],"transport":[108,120,165,219],"single":[111],"TMD":[112],"[4],":[113],"more":[115],"detailed":[116],"study":[117,169],"incorporating":[118],"dissipative":[119,218],"accurately":[122],"determine":[123],"current":[124],"[1]":[125],"missing,":[127],"which":[128],"providing":[130],"new":[131],"insights":[132],"into":[133],"2D-TMDs":[139],"enable":[141],"2D-FETs":[142],"attain":[144],"full":[146],"potential":[147],"near":[150],"future.":[151],"In":[152],"employing":[156],"density-functional-theory":[157],"(DFT)":[158],"simulations":[159],"non-equilibrium":[161],"Green's":[162],"function":[163],"(NEGF)":[164],"formalism":[166],"[1],":[167],"we":[168],"effects":[171],"various":[173],"types":[174],"on":[177],"material":[179],"properties":[180],"(specifically":[183],"MoX2and":[184],"WX2where$\\mathrm{X}":[185],"=\\mathrm{S}$,":[186],"Se,":[187],"Te)":[188],"Black":[190],"phosphorus":[191],"(BP)":[192],"(which":[193],"has":[194],"anisotropic$m^{\\ast}$[5]),":[195],"followed":[196],"evaluating":[198],"(incorporating":[201],"intrinsic-phonon,":[202],"charge":[203],"impurity,":[204],"remote-phonon":[206],"scatterings":[207],"[6],":[208],"[7])":[209],"finally,":[211],"first":[214],"time,":[215],"simulate":[216],"realistic":[217],"investigate":[221],"merits":[223],"an":[228],"actual":[229],"device.":[230]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}