{"id":"https://openalex.org/W4292387996","doi":"https://doi.org/10.1109/drc55272.2022.9855789","title":"Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties","display_name":"Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties","publication_year":2022,"publication_date":"2022-06-26","ids":{"openalex":"https://openalex.org/W4292387996","doi":"https://doi.org/10.1109/drc55272.2022.9855789"},"language":"en","primary_location":{"id":"doi:10.1109/drc55272.2022.9855789","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855789","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5018354165","display_name":"Lauren Hoang","orcid":"https://orcid.org/0009-0001-7556-8560"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Lauren Hoang","raw_affiliation_strings":["Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076247445","display_name":"Alwin Daus","orcid":"https://orcid.org/0000-0001-7461-3756"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alwin Daus","raw_affiliation_strings":["Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018431493","display_name":"Sumaiya Wahid","orcid":"https://orcid.org/0000-0003-1561-2627"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sumaiya Wahid","raw_affiliation_strings":["Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036509932","display_name":"Jimin Kwon","orcid":"https://orcid.org/0000-0002-5213-1323"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jimin Kwon","raw_affiliation_strings":["Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043413509","display_name":"Jung-Soo Ko","orcid":null},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jung-Soo Ko","raw_affiliation_strings":["Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050875874","display_name":"Shengjun Qin","orcid":"https://orcid.org/0000-0001-8707-6427"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shengjun Qin","raw_affiliation_strings":["Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045408578","display_name":"Mahnaz Islam","orcid":"https://orcid.org/0000-0002-4112-0477"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mahnaz Islam","raw_affiliation_strings":["Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065754731","display_name":"Krishna C. Saraswat","orcid":"https://orcid.org/0000-0003-1894-6315"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Krishna C. Saraswat","raw_affiliation_strings":["Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059975258","display_name":"H.\u2010S. Philip Wong","orcid":"https://orcid.org/0000-0002-0096-1472"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H.-S Philip Wong","raw_affiliation_strings":["Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5051662579","display_name":"Eric Pop","orcid":"https://orcid.org/0000-0003-0436-8534"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Eric Pop","raw_affiliation_strings":["Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"],"affiliations":[{"raw_affiliation_string":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":10,"corresponding_author_ids":["https://openalex.org/A5018354165"],"corresponding_institution_ids":["https://openalex.org/I97018004"],"apc_list":null,"apc_paid":null,"fwci":0.4575,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.60425745,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5063639879226685},{"id":"https://openalex.org/keywords/stability","display_name":"Stability (learning theory)","score":0.479788601398468},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.36441171169281006},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.34487858414649963},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3297204375267029},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.31255993247032166},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.26715582609176636},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24839511513710022},{"id":"https://openalex.org/keywords/machine-learning","display_name":"Machine learning","score":0.14241498708724976},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08405953645706177}],"concepts":[{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5063639879226685},{"id":"https://openalex.org/C112972136","wikidata":"https://www.wikidata.org/wiki/Q7595718","display_name":"Stability (learning theory)","level":2,"score":0.479788601398468},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.36441171169281006},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.34487858414649963},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3297204375267029},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.31255993247032166},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.26715582609176636},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24839511513710022},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.14241498708724976},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08405953645706177}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc55272.2022.9855789","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc55272.2022.9855789","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W3117971052","https://openalex.org/W3202963173","https://openalex.org/W3214737855"],"related_works":["https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036","https://openalex.org/W3148032049","https://openalex.org/W2271181815"],"abstract_inverted_index":{"Amorphous":[0],"oxide":[1,30],"semiconductors":[2],"(AOS)":[3],"can":[4],"be":[5],"processed":[6],"at":[7],"low-temperature":[8],"and":[9,39,59,85],"their":[10,57],"field-effect":[11],"transistors":[12],"(FETs)":[13],"have":[14,33],"demonstrated":[15],"very":[16],"low":[17],"off-state":[18],"current":[19],"[1],":[20],"offering":[21],"promise":[22],"for":[23,75,120],"low-power":[24],"back-end-of-line":[25],"(BEOL)":[26],"applications.":[27],"Indium":[28],"tin":[29],"(ITO)":[31],"FETs":[32],"recently":[34],"shown":[35],"good":[36,40],"characteristics":[37],"[2]":[38],"mobility":[41],"(>50":[42],"cm":[43],"<sup":[44,48,52],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[45,49,53,102,110,114],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[46],"V":[47],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">\u22121</sup>":[50,54],"s":[51],"[3]),":[55],"but":[56],"stability":[58,126],"degradation":[60],"remain":[61],"unknown,":[62],"e.g.":[63],"given":[64],"the":[65,76,79],"mobility-stability":[66],"trade-off":[67],"in":[68],"AOS":[69],"[4],":[70],"[5].":[71],"Here":[72],"we":[73],"investigate,":[74],"first":[77],"time,":[78],"influence":[80],"of":[81,128],"gate":[82,118],"dielectric":[83,119],"material":[84],"thickness":[86],"on":[87],"ITO-FET":[88],"stability,":[89],"which":[90,123],"impacts":[91],"bias":[92],"stress":[93],"through":[94],"trap":[95],"states.":[96],"We":[97],"find":[98],"that":[99],"HfO":[100],"<inf":[101,109,113],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[103,111],"is":[104],"more":[105],"stable":[106],"than":[107],"Al":[108],"O":[112],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</inf>":[115],"as":[116],"a":[117],"ITO":[121],"FETs,":[122],"contradicts":[124],"previous":[125],"studies":[127],"other":[129],"AOS.":[130]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}