{"id":"https://openalex.org/W2888779372","doi":"https://doi.org/10.1109/drc.2018.8442172","title":"Silicon Carbide Power Devices: A 35 Year Journey from Conception to Commercialization","display_name":"Silicon Carbide Power Devices: A 35 Year Journey from Conception to Commercialization","publication_year":2018,"publication_date":"2018-06-01","ids":{"openalex":"https://openalex.org/W2888779372","doi":"https://doi.org/10.1109/drc.2018.8442172","mag":"2888779372"},"language":"en","primary_location":{"id":"doi:10.1109/drc.2018.8442172","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442172","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109597278","display_name":"B. Jayant Baliga","orcid":null},"institutions":[{"id":"https://openalex.org/I137902535","display_name":"North Carolina State University","ror":"https://ror.org/04tj63d06","country_code":"US","type":"education","lineage":["https://openalex.org/I137902535"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"B. Jayant Baliga","raw_affiliation_strings":["North Carolina State University, 2410 Campus Shore Drive, Raleigh, NC, USA"],"affiliations":[{"raw_affiliation_string":"North Carolina State University, 2410 Campus Shore Drive, Raleigh, NC, USA","institution_ids":["https://openalex.org/I137902535"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5109597278"],"corresponding_institution_ids":["https://openalex.org/I137902535"],"apc_list":null,"apc_paid":null,"fwci":0.9124,"has_fulltext":false,"cited_by_count":22,"citation_normalized_percentile":{"value":0.76497898,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9954000115394592,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9904000163078308,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.8616645336151123},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.7236279249191284},{"id":"https://openalex.org/keywords/commercialization","display_name":"Commercialization","score":0.7089760303497314},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.6073011159896851},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.5512151718139648},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5470833778381348},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.5280585885047913},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5250292420387268},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5225743055343628},{"id":"https://openalex.org/keywords/semiconductor-device","display_name":"Semiconductor device","score":0.515340268611908},{"id":"https://openalex.org/keywords/figure-of-merit","display_name":"Figure of merit","score":0.5051060318946838},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.47863736748695374},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.45995983481407166},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.4241166114807129},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.40636566281318665},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3260136544704437},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3225439190864563},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2869034707546234},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.2843056321144104},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.15300777554512024},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.13237032294273376},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11295536160469055},{"id":"https://openalex.org/keywords/business","display_name":"Business","score":0.0798654556274414}],"concepts":[{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.8616645336151123},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.7236279249191284},{"id":"https://openalex.org/C2780625559","wikidata":"https://www.wikidata.org/wiki/Q5152592","display_name":"Commercialization","level":2,"score":0.7089760303497314},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.6073011159896851},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5512151718139648},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5470833778381348},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.5280585885047913},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5250292420387268},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5225743055343628},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.515340268611908},{"id":"https://openalex.org/C130277099","wikidata":"https://www.wikidata.org/wiki/Q3676605","display_name":"Figure of merit","level":2,"score":0.5051060318946838},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.47863736748695374},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.45995983481407166},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.4241166114807129},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.40636566281318665},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3260136544704437},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3225439190864563},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2869034707546234},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.2843056321144104},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.15300777554512024},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.13237032294273376},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11295536160469055},{"id":"https://openalex.org/C144133560","wikidata":"https://www.wikidata.org/wiki/Q4830453","display_name":"Business","level":0,"score":0.0798654556274414},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C162853370","wikidata":"https://www.wikidata.org/wiki/Q39809","display_name":"Marketing","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc.2018.8442172","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442172","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W267840210","https://openalex.org/W1999565459","https://openalex.org/W2137577313","https://openalex.org/W2150108215","https://openalex.org/W2535893118","https://openalex.org/W2780686853","https://openalex.org/W3145101554","https://openalex.org/W4302192501"],"related_works":["https://openalex.org/W1561862401","https://openalex.org/W1607623168","https://openalex.org/W2977318605","https://openalex.org/W2152413727","https://openalex.org/W2121151410","https://openalex.org/W2007746594","https://openalex.org/W2031145321","https://openalex.org/W2056617253","https://openalex.org/W2021857492","https://openalex.org/W2125515306"],"abstract_inverted_index":{"A":[0],"relationship":[1],"between":[2],"the":[3,10,25,40,49,67,74,78,103,115],"basic":[4],"properties":[5],"of":[6,12,32,48,69,80,105,107],"semiconductor":[7],"materials":[8],"and":[9,90,114],"performance":[11],"unipolar":[13],"power":[14,44,91,109],"devices":[15,72,82],"was":[16],"first":[17],"published":[18],"in":[19,43,77],"1982":[20],"[1].":[21],"This":[22,65,100],"theory":[23],"produced":[24],"Baliga's":[26],"Figure-of-Merit":[27],"(BFOM)":[28],"which":[29,33],"allows":[30],"determination":[31],"semiconductors":[34],"can":[35],"be":[36],"used":[37],"to":[38,59],"reduce":[39],"specific":[41],"on-resistance":[42],"devices.":[45],"Accurate":[46],"measurements":[47],"impact":[50],"ionization":[51],"coefficients":[52],"for":[53,63],"SiC":[54,71,108],"[2]":[55],"determined":[56],"a":[57],"BFOM":[58],"more":[60],"than":[61],"1000":[62],"4H-SiC.":[64],"encouraged":[66],"development":[68,106],"practical":[70],"during":[73],"1990s":[75],"culminating":[76],"announcement":[79],"commercial":[81],"by":[83],"2003.":[84],"Today,":[85],"high":[86],"voltage":[87],"JBS":[88],"rectifiers":[89],"MOSFETs":[92],"have":[93],"become":[94],"commercially":[95],"available":[96],"from":[97],"multiple":[98],"sources.":[99],"paper":[101],"reviews":[102],"history":[104],"devices,":[110],"their":[111],"potential":[112],"applications,":[113],"social":[116],"impact.":[117]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":7},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":1}],"updated_date":"2026-03-17T09:09:15.849793","created_date":"2025-10-10T00:00:00"}