{"id":"https://openalex.org/W4388623318","doi":"https://doi.org/10.1109/bcicts54660.2023.10310716","title":"A Physically-Based Matching Model for HiSIM_HV","display_name":"A Physically-Based Matching Model for HiSIM_HV","publication_year":2023,"publication_date":"2023-10-16","ids":{"openalex":"https://openalex.org/W4388623318","doi":"https://doi.org/10.1109/bcicts54660.2023.10310716"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts54660.2023.10310716","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/bcicts54660.2023.10310716","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5045002702","display_name":"Rachid Hamani","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Rachid Hamani","raw_affiliation_strings":["X-FAB Semiconductor Foundries"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"X-FAB Semiconductor Foundries","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060333807","display_name":"J. R. O. R. Martins","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. R. O. R. Martins","raw_affiliation_strings":["X-FAB Semiconductor Foundries"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"X-FAB Semiconductor Foundries","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111073475","display_name":"Hagen Wald","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hagen Wald","raw_affiliation_strings":["X-FAB Semiconductor Foundries"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"X-FAB Semiconductor Foundries","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5093251591","display_name":"Joerg Gessner","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Joerg Gessner","raw_affiliation_strings":["X-FAB Semiconductor Foundries"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"X-FAB Semiconductor Foundries","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5039499692","display_name":"Michaelina Ong Ing Ing","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Michaelina Ong Ing Ing","raw_affiliation_strings":["X-FAB Semiconductor Foundries"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"X-FAB Semiconductor Foundries","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.13403704,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"54","last_page":"57"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.7112370133399963},{"id":"https://openalex.org/keywords/monte-carlo-method","display_name":"Monte Carlo method","score":0.632763147354126},{"id":"https://openalex.org/keywords/matching","display_name":"Matching (statistics)","score":0.6184086799621582},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.5868886709213257},{"id":"https://openalex.org/keywords/standard-deviation","display_name":"Standard deviation","score":0.563109815120697},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.562874436378479},{"id":"https://openalex.org/keywords/range","display_name":"Range (aeronautics)","score":0.561326801776886},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4874110519886017},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4606061577796936},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.44136685132980347},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.41423919796943665},{"id":"https://openalex.org/keywords/statistical-physics","display_name":"Statistical physics","score":0.3719708323478699},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.31130993366241455},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24594569206237793},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1919676959514618},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.17953813076019287},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.17689698934555054},{"id":"https://openalex.org/keywords/statistics","display_name":"Statistics","score":0.1414496898651123}],"concepts":[{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.7112370133399963},{"id":"https://openalex.org/C19499675","wikidata":"https://www.wikidata.org/wiki/Q232207","display_name":"Monte Carlo method","level":2,"score":0.632763147354126},{"id":"https://openalex.org/C165064840","wikidata":"https://www.wikidata.org/wiki/Q1321061","display_name":"Matching (statistics)","level":2,"score":0.6184086799621582},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.5868886709213257},{"id":"https://openalex.org/C22679943","wikidata":"https://www.wikidata.org/wiki/Q159375","display_name":"Standard deviation","level":2,"score":0.563109815120697},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.562874436378479},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.561326801776886},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4874110519886017},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4606061577796936},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.44136685132980347},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.41423919796943665},{"id":"https://openalex.org/C121864883","wikidata":"https://www.wikidata.org/wiki/Q677916","display_name":"Statistical physics","level":1,"score":0.3719708323478699},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.31130993366241455},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24594569206237793},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1919676959514618},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.17953813076019287},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.17689698934555054},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.1414496898651123},{"id":"https://openalex.org/C146978453","wikidata":"https://www.wikidata.org/wiki/Q3798668","display_name":"Aerospace engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts54660.2023.10310716","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/bcicts54660.2023.10310716","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.4300000071525574}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W2015428081","https://openalex.org/W2024196742","https://openalex.org/W2053142600","https://openalex.org/W2074598226","https://openalex.org/W2080990343","https://openalex.org/W2110870100","https://openalex.org/W2140823559","https://openalex.org/W2226938258","https://openalex.org/W2566193534","https://openalex.org/W2884248788","https://openalex.org/W3094011573","https://openalex.org/W3161343972","https://openalex.org/W4293518731","https://openalex.org/W6635331448"],"related_works":["https://openalex.org/W4254968926","https://openalex.org/W1977042749","https://openalex.org/W2542162669","https://openalex.org/W2606572865","https://openalex.org/W2042881279","https://openalex.org/W2121451436","https://openalex.org/W2115248544","https://openalex.org/W1608296848","https://openalex.org/W2975003965","https://openalex.org/W2049062674"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,47],"physically-based":[4],"matching":[5,55],"model":[6,40],"that":[7],"incorporates":[8],"mismatch":[9,45],"fluctuations":[10],"into":[11,34],"the":[12,35,95],"HiSIM_HV":[13],"MOSFET":[14],"model.":[15,37],"Analytical":[16],"expressions":[17],"capturing":[18],"variations":[19],"in":[20],"threshold":[21,89],"voltage,":[22,90],"current":[23,44,84,96],"factor,":[24],"and":[25,32,91,106],"drift":[26],"region":[27],"resistor":[28],"have":[29],"been":[30],"developed":[31],"integrated":[33],"compact":[36],"The":[38,80,98],"proposed":[39],"accurately":[41],"predicts":[42],"drain":[43,83],"across":[46],"wide":[48],"operational":[49],"range":[50],"while":[51],"utilizing":[52],"just":[53],"three":[54],"parameters.":[56],"Validation":[57],"was":[58],"performed":[59],"through":[60],"Monte":[61],"Carlo":[62],"simulations,":[63],"which":[64],"were":[65],"compared":[66],"against":[67],"experimental":[68],"measurements":[69,105],"on":[70],"diverse":[71],"device":[72],"classes":[73],"fabricated":[74],"using":[75],"X-FAB's":[76],"0.18":[77],"\u00b5m":[78],"processes.":[79],"results":[81],"encompass":[82],"mismatch,":[85],"standard":[86,92],"deviation":[87,93],"of":[88,94],"factor.":[97],"presented":[99],"outcomes":[100],"demon-strate":[101],"good":[102],"agreement":[103],"between":[104],"simulations.":[107]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}