{"id":"https://openalex.org/W4322577907","doi":"https://doi.org/10.1109/bcicts53451.2022.10051747","title":"Numerical Optimization of On-Resistance and Transconductance in Depletion-Mode and Enhancement-Mode GaN HEMTs","display_name":"Numerical Optimization of On-Resistance and Transconductance in Depletion-Mode and Enhancement-Mode GaN HEMTs","publication_year":2022,"publication_date":"2022-10-16","ids":{"openalex":"https://openalex.org/W4322577907","doi":"https://doi.org/10.1109/bcicts53451.2022.10051747"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts53451.2022.10051747","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts53451.2022.10051747","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5019702716","display_name":"I. Berdalovi\u0107","orcid":"https://orcid.org/0000-0003-0514-2326"},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"Ivan Berdalovic","raw_affiliation_strings":["University of Zagreb,Faculty of Electrical Engineering and Computing,Zagreb,Croatia,10000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Zagreb,Faculty of Electrical Engineering and Computing,Zagreb,Croatia,10000","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003032308","display_name":"Mirko Poljak","orcid":"https://orcid.org/0000-0001-7075-6688"},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"Mirko Poljak","raw_affiliation_strings":["University of Zagreb,Faculty of Electrical Engineering and Computing,Zagreb,Croatia,10000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Zagreb,Faculty of Electrical Engineering and Computing,Zagreb,Croatia,10000","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5061642935","display_name":"Tomislav Suligoj","orcid":null},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"Tomislav Suligoj","raw_affiliation_strings":["University of Zagreb,Faculty of Electrical Engineering and Computing,Zagreb,Croatia,10000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Zagreb,Faculty of Electrical Engineering and Computing,Zagreb,Croatia,10000","institution_ids":["https://openalex.org/I181343428"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I181343428"],"apc_list":null,"apc_paid":null,"fwci":0.1379,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.49856485,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"29","last_page":"32"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.9347400069236755},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8133280277252197},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7065806984901428},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6960952877998352},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.639789879322052},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5621851682662964},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.5475207567214966},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5320239067077637},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5084268450737},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4905485510826111},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.47346392273902893},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24074864387512207},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.21147498488426208},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.10536468029022217},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.0809173583984375},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.06910812854766846}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.9347400069236755},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8133280277252197},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7065806984901428},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6960952877998352},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.639789879322052},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5621851682662964},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.5475207567214966},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5320239067077637},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5084268450737},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4905485510826111},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.47346392273902893},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24074864387512207},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.21147498488426208},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.10536468029022217},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0809173583984375},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06910812854766846},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts53451.2022.10051747","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts53451.2022.10051747","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.7799999713897705,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1978693078","https://openalex.org/W2007930334","https://openalex.org/W2082369811","https://openalex.org/W2086658993","https://openalex.org/W2113488710","https://openalex.org/W2153784824","https://openalex.org/W2233105323","https://openalex.org/W2485705130","https://openalex.org/W2806927876","https://openalex.org/W2945696935","https://openalex.org/W2973995896","https://openalex.org/W3039889134","https://openalex.org/W3126913791","https://openalex.org/W3212612506","https://openalex.org/W4210775253"],"related_works":["https://openalex.org/W3063337879","https://openalex.org/W3158277807","https://openalex.org/W1964679965","https://openalex.org/W2249766267","https://openalex.org/W2102640583","https://openalex.org/W2389330181","https://openalex.org/W2066729282","https://openalex.org/W3126073919","https://openalex.org/W1902923516","https://openalex.org/W2466508933"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"use":[4],"a":[5,46,64,73],"numerical":[6],"mobility":[7,14,43],"modeling":[8],"framework":[9],"for":[10,45,83,166,171],"GaN-based":[11],"high":[12],"electron":[13],"transistors":[15],"(HEMTs)":[16],"to":[17,52,92,96,130,161,188],"examine":[18],"the":[19,31,59,84,93,101,136,139,146,151,167,172,178,181,190],"dependence":[20],"of":[21,58,67,76,80,103,117,123,138,180],"important":[22],"design":[23,164],"parameters":[24,57,165],"such":[25],"as":[26,170],"on-resistance":[27,66,112],"and":[28,63,78,100,105,111,141,155],"transconductance":[29,116],"on":[30,108],"device":[32,60,195],"structure.":[33],"The":[34,55,115,157],"model":[35],"is":[36,70,90,113,126,184],"calibrated":[37],"by":[38,133],"matching":[39],"previously":[40],"published":[41],"experimental":[42],"data":[44],"depletion-mode":[47,174],"AlGaN/AlN/GaN/AlGaN":[48],"double-heterostructure":[49],"(DH)":[50],"HEMT":[51,169],"within":[53],"\u00b110%.":[54],"structural":[56],"are":[61],"optimized":[62],"minimum":[65],"541":[68],"\u03a9/\u25a1":[69],"achieved":[71],"with":[72],"mole":[74],"fraction":[75],"0.36":[77],"thickness":[79,107,137],"14":[81],"nm":[82],"AlGaN":[85,142],"barrier.":[86],"A":[87],"p-GaN":[88,140,182],"cap":[89,104,183],"added":[91],"initial":[94,173],"structure":[95],"achieve":[97],"enhancement-mode":[98,118,168],"operation,":[99],"impact":[102],"barrier":[106],"threshold":[109,153,191],"voltage":[110,154,192],"discussed.":[114],"devices":[119],"at":[120],"an":[121,185],"overvoltage":[122],"8":[124],"V":[125],"improved":[127],"from":[128],"1.58":[129],"2.59":[131],"mS/\u25a1":[132],"simultaneously":[134],"reducing":[135],"layers,":[143],"thus":[144],"increasing":[145],"gate":[147],"capacitance":[148],"while":[149],"maintaining":[150],"same":[152],"on-resistance.":[156],"optimization":[158],"procedure":[159],"allows":[160],"obtain":[162],"similar":[163],"structure,":[175],"proving":[176],"that":[177],"addition":[179],"efficient":[186],"way":[187],"increase":[189],"without":[193],"compromising":[194],"performance.":[196]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}