{"id":"https://openalex.org/W4210775253","doi":"https://doi.org/10.1109/bcicts50416.2021.9682472","title":"Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling Framework","display_name":"Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling Framework","publication_year":2021,"publication_date":"2021-12-05","ids":{"openalex":"https://openalex.org/W4210775253","doi":"https://doi.org/10.1109/bcicts50416.2021.9682472"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts50416.2021.9682472","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts50416.2021.9682472","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5019702716","display_name":"I. Berdalovi\u0107","orcid":"https://orcid.org/0000-0003-0514-2326"},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"Ivan Berdalovic","raw_affiliation_strings":["Micro and Nano Electronics Laboratory of the Faculty of Electrical Engineering and Computing, University of Zagreb, Croatia, Zagreb"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micro and Nano Electronics Laboratory of the Faculty of Electrical Engineering and Computing, University of Zagreb, Croatia, Zagreb","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003032308","display_name":"Mirko Poljak","orcid":"https://orcid.org/0000-0001-7075-6688"},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"Mirko Poljak","raw_affiliation_strings":["Micro and Nano Electronics Laboratory of the Faculty of Electrical Engineering and Computing, University of Zagreb, Croatia, Zagreb"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micro and Nano Electronics Laboratory of the Faculty of Electrical Engineering and Computing, University of Zagreb, Croatia, Zagreb","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5061642935","display_name":"Tomislav Suligoj","orcid":null},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"Tomislav Suligoj","raw_affiliation_strings":["Micro and Nano Electronics Laboratory of the Faculty of Electrical Engineering and Computing, University of Zagreb, Croatia, Zagreb"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micro and Nano Electronics Laboratory of the Faculty of Electrical Engineering and Computing, University of Zagreb, Croatia, Zagreb","institution_ids":["https://openalex.org/I181343428"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I181343428"],"apc_list":null,"apc_paid":null,"fwci":0.3224,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.60719433,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.9081466197967529},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7615315914154053},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7092165946960449},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.6906446218490601},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.5985129475593567},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.5533660054206848},{"id":"https://openalex.org/keywords/scattering","display_name":"Scattering","score":0.552669882774353},{"id":"https://openalex.org/keywords/phonon-scattering","display_name":"Phonon scattering","score":0.5288903117179871},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5038928389549255},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"Electron mobility","score":0.48257771134376526},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.421028196811676},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.37604251503944397},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.2740499973297119},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.16627588868141174},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.12732619047164917},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.10651847720146179},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09281229972839355}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.9081466197967529},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7615315914154053},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7092165946960449},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6906446218490601},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.5985129475593567},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5533660054206848},{"id":"https://openalex.org/C191486275","wikidata":"https://www.wikidata.org/wiki/Q210028","display_name":"Scattering","level":2,"score":0.552669882774353},{"id":"https://openalex.org/C65053842","wikidata":"https://www.wikidata.org/wiki/Q7187311","display_name":"Phonon scattering","level":3,"score":0.5288903117179871},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5038928389549255},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.48257771134376526},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.421028196811676},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.37604251503944397},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2740499973297119},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16627588868141174},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.12732619047164917},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.10651847720146179},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09281229972839355},{"id":"https://openalex.org/C97346530","wikidata":"https://www.wikidata.org/wiki/Q487005","display_name":"Thermal conductivity","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts50416.2021.9682472","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts50416.2021.9682472","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8500000238418579}],"awards":[{"id":"https://openalex.org/G4592856394","display_name":"Next-generation Semiconductor Devices and Integrated Circuits for the Internet-of-Things Era","funder_award_id":"IP-2018-01-5296","funder_id":"https://openalex.org/F4320322674","funder_display_name":"Hrvatska Zaklada za Znanost"}],"funders":[{"id":"https://openalex.org/F4320322674","display_name":"Hrvatska Zaklada za Znanost","ror":"https://ror.org/03n51vw80"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W2006882500","https://openalex.org/W2012655250","https://openalex.org/W2076507752","https://openalex.org/W2086658993","https://openalex.org/W2113488710","https://openalex.org/W2806927876","https://openalex.org/W2945696935","https://openalex.org/W3039889134","https://openalex.org/W3126913791","https://openalex.org/W3212612506","https://openalex.org/W4238618429"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W1975307200","https://openalex.org/W4377089489","https://openalex.org/W3088454288","https://openalex.org/W4313611767","https://openalex.org/W2613044742","https://openalex.org/W4385217635","https://openalex.org/W2466508933"],"abstract_inverted_index":{"The":[0,123],"emergence":[1],"of":[2,44,54,60,73,87,90,95,127,174,208,213],"gallium":[3],"nitride":[4],"(GaN)":[5],"as":[6],"a":[7,52,104,108,118,183],"popular":[8],"material":[9],"for":[10,24,69,136],"power":[11],"electronics":[12],"applications":[13],"due":[14,170],"to":[15,38,83,171],"its":[16],"superior":[17],"transport":[18,58],"properties":[19,59],"has":[20],"seen":[21],"the":[22,57,71,74,85,128,141,162,167,175,178,204,209,219],"need":[23],"developing":[25],"enhancement-mode":[26,91,96],"GaN":[27,80,106,120],"high":[28,191],"electron":[29,76],"mobility":[30,72,130,169],"transistors":[31],"(HEMTs).":[32],"Several":[33],"techniques":[34],"have":[35],"been":[36],"used":[37],"achieve":[39],"enhancement-mode,":[40],"i.e.":[41],"normally-off":[42],"operation":[43],"AlGaN/GaN":[45,101,115],"HEMT":[46,81,102,116],"devices,":[47],"but":[48],"there":[49],"are":[50,98,145],"only":[51],"handful":[53],"studies":[55],"on":[56],"such":[61],"devices.":[62],"This":[63],"paper":[64],"uses":[65],"an":[66,100,114],"advanced":[67],"framework":[68],"modeling":[70],"2D":[75],"gas":[77],"(2DEG)":[78],"in":[79,218],"devices":[82],"assess":[84],"performance":[86],"different":[88,132,210],"types":[89,94],"HEMTs.":[92],"Three":[93],"structures":[97,139,181],"compared:":[99],"with":[103,117],"p-type":[105],"cap,":[107],"double":[109],"heterostructure":[110],"Al-GaN/GaN/AlGaN":[111],"HEMT,":[112],"and":[113,140,190],"p-doped":[119],"buffer":[121],"layer.":[122],"gate":[124,192],"voltage":[125],"dependence":[126,212],"2DEG":[129],"at":[131,151],"temperatures":[133,189],"is":[134,148,160,196,203],"analyzed":[135],"all":[137],"three":[138,220],"key":[142],"scattering":[143,159,202,216],"mechanisms":[144],"identified.":[146],"It":[147],"concluded":[149],"that":[150],"room":[152],"temperature,":[153],"when":[154,198],"polar":[155],"optical":[156],"phonon":[157],"(POP)":[158],"dominant,":[161],"p-GaN":[163],"cap":[164],"structure":[165],"exhibits":[166],"highest":[168],"weaker":[172],"confinement":[173],"2DEG,":[176],"while":[177],"other":[179],"two":[180],"show":[182],"~15%":[184],"lower":[185],"mobility.":[186],"At":[187],"low":[188],"voltages,":[193],"this":[194],"trend":[195],"reversed":[197],"interface":[199],"roughness":[200],"(IFR)":[201],"dominant":[205],"mechanism,":[206],"because":[207],"energy":[211],"inter-subband":[214],"IFR":[215],"rates":[217],"structures.":[221]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}