{"id":"https://openalex.org/W4391183664","doi":"https://doi.org/10.1109/asicon58565.2023.10396547","title":"A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence","display_name":"A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence","publication_year":2023,"publication_date":"2023-10-24","ids":{"openalex":"https://openalex.org/W4391183664","doi":"https://doi.org/10.1109/asicon58565.2023.10396547"},"language":"en","primary_location":{"id":"doi:10.1109/asicon58565.2023.10396547","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon58565.2023.10396547","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE 15th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101296220","display_name":"Zhenbo Rao","orcid":null},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Zhenbo Rao","raw_affiliation_strings":["Tsinghua University,School of Integrated Circuits,Beijing,China,100083"],"affiliations":[{"raw_affiliation_string":"Tsinghua University,School of Integrated Circuits,Beijing,China,100083","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100617593","display_name":"Yan Wang","orcid":"https://orcid.org/0000-0003-4851-6113"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yan Wang","raw_affiliation_strings":["Tsinghua University,School of Integrated Circuits,Beijing,China,100083"],"affiliations":[{"raw_affiliation_string":"Tsinghua University,School of Integrated Circuits,Beijing,China,100083","institution_ids":["https://openalex.org/I99065089"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5101296220"],"corresponding_institution_ids":["https://openalex.org/I99065089"],"apc_list":null,"apc_paid":null,"fwci":0.1339,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.48357192,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9822999835014343,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9765999913215637,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/datasheet","display_name":"Datasheet","score":0.9316083788871765},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6683720350265503},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.663546085357666},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.647041916847229},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.6067497134208679},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5121235847473145},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4964643120765686},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3771122694015503},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3133584260940552},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.30755338072776794},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.231696218252182},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16360339522361755},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10760784149169922}],"concepts":[{"id":"https://openalex.org/C2781384022","wikidata":"https://www.wikidata.org/wiki/Q1172383","display_name":"Datasheet","level":2,"score":0.9316083788871765},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6683720350265503},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.663546085357666},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.647041916847229},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.6067497134208679},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5121235847473145},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4964643120765686},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3771122694015503},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3133584260940552},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.30755338072776794},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.231696218252182},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16360339522361755},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10760784149169922},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon58565.2023.10396547","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon58565.2023.10396547","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE 15th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1595159159","https://openalex.org/W2018044981","https://openalex.org/W2136950565","https://openalex.org/W2145352455","https://openalex.org/W2146719088","https://openalex.org/W2294189793","https://openalex.org/W2764005300","https://openalex.org/W2887045273","https://openalex.org/W2902759092","https://openalex.org/W3121006917","https://openalex.org/W4248754841","https://openalex.org/W4313387421","https://openalex.org/W6635263460"],"related_works":["https://openalex.org/W4241261995","https://openalex.org/W4226043035","https://openalex.org/W2532181724","https://openalex.org/W2799073410","https://openalex.org/W2805299939","https://openalex.org/W2945285759","https://openalex.org/W2771849767","https://openalex.org/W4399527091","https://openalex.org/W2217505285","https://openalex.org/W2966234605"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,102],"datasheet-driven":[4],"SPICE":[5,22],"model":[6,23,56,63],"and":[7,37,91],"corresponding":[8],"automated":[9,55],"extraction":[10],"process":[11],"for":[12,54],"Silicon":[13],"Carbide":[14],"(SiC)":[15],"Metal-Oxide-Semiconductor":[16],"Field-Effect":[17],"Transistors":[18],"(MOSFETs).":[19],"The":[20,93],"proposed":[21],"introduces":[24],"an":[25],"equivalent":[26],"circuit":[27,39],"that":[28,80,86],"capture":[29],"the":[30,35,62,66,81],"intrinsic":[31],"physical":[32],"mechanisms":[33],"of":[34,101],"devices":[36,76],"each":[38],"element":[40],"is":[41,52],"described":[42],"by":[43,64],"non-segmented":[44],"empirical":[45],"formulas.":[46],"A":[47],"differential":[48],"evolution":[49],"(DE)":[50],"algorithm":[51],"adopted":[53],"parameters":[57],"extraction.":[58],"We":[59],"have":[60],"validated":[61],"comparing":[65],"simulation":[67,100],"results":[68],"with":[69],"datasheets":[70],"from":[71],"two":[72],"mainstream":[73],"SiC":[74],"MOSFET":[75],"vendors.":[77],"Results":[78],"show":[79],"RMS":[82],"errors":[83],"are":[84],"less":[85],"7%":[87],"under":[88],"different":[89],"bias":[90],"temperatures.":[92],"model's":[94],"convergence":[95],"was":[96],"further":[97],"confirmed":[98],"through":[99],"three-phase":[103],"full-bridge":[104],"inverter":[105],"circuit.":[106]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-25T21:42:39.735039","created_date":"2025-10-10T00:00:00"}