{"id":"https://openalex.org/W3004543491","doi":"https://doi.org/10.1109/asicon47005.2019.8983678","title":"Oxygen-plasma-based digital etching for GaN/AlGaN high electron mobility transistors","display_name":"Oxygen-plasma-based digital etching for GaN/AlGaN high electron mobility transistors","publication_year":2019,"publication_date":"2019-10-01","ids":{"openalex":"https://openalex.org/W3004543491","doi":"https://doi.org/10.1109/asicon47005.2019.8983678","mag":"3004543491"},"language":"en","primary_location":{"id":"doi:10.1109/asicon47005.2019.8983678","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon47005.2019.8983678","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 13th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5008331468","display_name":"Jingyi Wu","orcid":"https://orcid.org/0009-0001-8026-7842"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Jingyi Wu","raw_affiliation_strings":["Southern University of Science and Technology,Department of Electric and Electronics Engineering,Shenzhen, Guangdong,China,518055","Department of Electric and Electronics Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China"],"affiliations":[{"raw_affiliation_string":"Southern University of Science and Technology,Department of Electric and Electronics Engineering,Shenzhen, Guangdong,China,518055","institution_ids":["https://openalex.org/I3045169105"]},{"raw_affiliation_string":"Department of Electric and Electronics Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100381067","display_name":"Yang Jiang","orcid":"https://orcid.org/0000-0002-5430-2931"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yang Jiang","raw_affiliation_strings":["Southern University of Science and Technology,Department of Electric and Electronics Engineering,Shenzhen, Guangdong,China,518055","The Key Laboratory of the Third Generation Semiconductors, Southern University of Science and Technology, Shenzhen, Guangdong, China"],"affiliations":[{"raw_affiliation_string":"Southern University of Science and Technology,Department of Electric and Electronics Engineering,Shenzhen, Guangdong,China,518055","institution_ids":["https://openalex.org/I3045169105"]},{"raw_affiliation_string":"The Key Laboratory of the Third Generation Semiconductors, Southern University of Science and Technology, Shenzhen, Guangdong, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074471355","display_name":"Zeyu Wan","orcid":"https://orcid.org/0009-0008-5649-0316"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zeyu Wan","raw_affiliation_strings":["Southern University of Science and Technology,Department of Electric and Electronics Engineering,Shenzhen, Guangdong,China,518055","Department of Electric and Electronics Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China"],"affiliations":[{"raw_affiliation_string":"Southern University of Science and Technology,Department of Electric and Electronics Engineering,Shenzhen, Guangdong,China,518055","institution_ids":["https://openalex.org/I3045169105"]},{"raw_affiliation_string":"Department of Electric and Electronics Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000760633","display_name":"Siqi Lei","orcid":null},"institutions":[{"id":"https://openalex.org/I204983213","display_name":"Harbin Institute of Technology","ror":"https://ror.org/01yqg2h08","country_code":"CN","type":"education","lineage":["https://openalex.org/I204983213"]},{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Siqi Lei","raw_affiliation_strings":["Harbin Institute of Technology,China","Department of Electric and Electronics Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China"],"affiliations":[{"raw_affiliation_string":"Harbin Institute of Technology,China","institution_ids":["https://openalex.org/I204983213"]},{"raw_affiliation_string":"Department of Electric and Electronics Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056677136","display_name":"Wei\u2010Chih Cheng","orcid":"https://orcid.org/0000-0002-4818-6057"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]},{"id":"https://openalex.org/I204983213","display_name":"Harbin Institute of Technology","ror":"https://ror.org/01yqg2h08","country_code":"CN","type":"education","lineage":["https://openalex.org/I204983213"]}],"countries":["CN","HK"],"is_corresponding":false,"raw_author_name":"Wei-Chih Cheng","raw_affiliation_strings":["Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering,Hong Kong,China","Harbin Institute of Technology, China"],"affiliations":[{"raw_affiliation_string":"Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering,Hong Kong,China","institution_ids":["https://openalex.org/I200769079"]},{"raw_affiliation_string":"Harbin Institute of Technology, China","institution_ids":["https://openalex.org/I204983213"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063750111","display_name":"Guangnan Zhou","orcid":"https://orcid.org/0000-0002-6414-0462"},"institutions":[{"id":"https://openalex.org/I141945490","display_name":"University of British Columbia","ror":"https://ror.org/03rmrcq20","country_code":"CA","type":"education","lineage":["https://openalex.org/I141945490"]},{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["CA","HK"],"is_corresponding":false,"raw_author_name":"Guangnan Zhou","raw_affiliation_strings":["University of British Columbia,Department of Materials Engineering,Vancouver,BC,Canada","Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China"],"affiliations":[{"raw_affiliation_string":"University of British Columbia,Department of Materials Engineering,Vancouver,BC,Canada","institution_ids":["https://openalex.org/I141945490"]},{"raw_affiliation_string":"Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009059884","display_name":"Robert Sokolovskij","orcid":"https://orcid.org/0000-0003-0447-9672"},"institutions":[{"id":"https://openalex.org/I141945490","display_name":"University of British Columbia","ror":"https://ror.org/03rmrcq20","country_code":"CA","type":"education","lineage":["https://openalex.org/I141945490"]},{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["CA","NL"],"is_corresponding":false,"raw_author_name":"Robert Sokolovskij","raw_affiliation_strings":["Delft University of Technology,Department of Microelectronics,Delft,Netherlands","Department of Materials Engineering, University of British Columbia, Vancouver, BC, Canada"],"affiliations":[{"raw_affiliation_string":"Delft University of Technology,Department of Microelectronics,Delft,Netherlands","institution_ids":["https://openalex.org/I98358874"]},{"raw_affiliation_string":"Department of Materials Engineering, University of British Columbia, Vancouver, BC, Canada","institution_ids":["https://openalex.org/I141945490"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100434839","display_name":"Qing Wang","orcid":"https://orcid.org/0000-0002-5478-5662"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]},{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["CN","NL"],"is_corresponding":false,"raw_author_name":"Qing Wang","raw_affiliation_strings":["School of Microelectronics, Southern University of Science and Technology,Shenzhen, Guangdong,China,518055","Department of Microelectronics, Delft University of Technology, Delft, Netherlands"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Southern University of Science and Technology,Shenzhen, Guangdong,China,518055","institution_ids":["https://openalex.org/I3045169105"]},{"raw_affiliation_string":"Department of Microelectronics, Delft University of Technology, Delft, Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083436523","display_name":"Guangrui Xia","orcid":"https://orcid.org/0000-0002-5290-4963"},"institutions":[{"id":"https://openalex.org/I141945490","display_name":"University of British Columbia","ror":"https://ror.org/03rmrcq20","country_code":"CA","type":"education","lineage":["https://openalex.org/I141945490"]},{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CA","CN"],"is_corresponding":false,"raw_author_name":"Guangrui Maggie Xia","raw_affiliation_strings":["University of British Columbia,Department of Materials Engineering,Vancouver,BC,Canada","School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, China"],"affiliations":[{"raw_affiliation_string":"University of British Columbia,Department of Materials Engineering,Vancouver,BC,Canada","institution_ids":["https://openalex.org/I141945490"]},{"raw_affiliation_string":"School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101765075","display_name":"Hongyu Yu","orcid":"https://orcid.org/0000-0002-5756-868X"},"institutions":[{"id":"https://openalex.org/I141945490","display_name":"University of British Columbia","ror":"https://ror.org/03rmrcq20","country_code":"CA","type":"education","lineage":["https://openalex.org/I141945490"]},{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CA","CN"],"is_corresponding":false,"raw_author_name":"Hongyu Yu","raw_affiliation_strings":["The Key Laboratory of the Third Generation Semiconductors, Southern University of Science and Technology,Shenzhen, Guangdong,China,518055","Department of Materials Engineering, University of British Columbia, Vancouver, BC, Canada"],"affiliations":[{"raw_affiliation_string":"The Key Laboratory of the Third Generation Semiconductors, Southern University of Science and Technology,Shenzhen, Guangdong,China,518055","institution_ids":["https://openalex.org/I3045169105"]},{"raw_affiliation_string":"Department of Materials Engineering, University of British Columbia, Vancouver, BC, Canada","institution_ids":["https://openalex.org/I141945490"]}]}],"institutions":[],"countries_distinct_count":4,"institutions_distinct_count":10,"corresponding_author_ids":["https://openalex.org/A5008331468"],"corresponding_institution_ids":["https://openalex.org/I3045169105"],"apc_list":null,"apc_paid":null,"fwci":0.1771,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.55612911,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8484614491462708},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7411507368087769},{"id":"https://openalex.org/keywords/etching","display_name":"Etching (microfabrication)","score":0.7393751740455627},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6183177828788757},{"id":"https://openalex.org/keywords/dry-etching","display_name":"Dry etching","score":0.5678375959396362},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.512365460395813},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5007941722869873},{"id":"https://openalex.org/keywords/plasma-etching","display_name":"Plasma etching","score":0.49196645617485046},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.4873700737953186},{"id":"https://openalex.org/keywords/reactive-ion-etching","display_name":"Reactive-ion etching","score":0.47449398040771484},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.46736833453178406},{"id":"https://openalex.org/keywords/surface-finish","display_name":"Surface finish","score":0.42063212394714355},{"id":"https://openalex.org/keywords/oxygen","display_name":"Oxygen","score":0.4204968810081482},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"Surface roughness","score":0.4171898663043976},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.23324638605117798},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2176501452922821},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.1870611608028412},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.158972829580307},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.12293872237205505}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8484614491462708},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7411507368087769},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.7393751740455627},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6183177828788757},{"id":"https://openalex.org/C1291036","wikidata":"https://www.wikidata.org/wiki/Q1191918","display_name":"Dry etching","level":4,"score":0.5678375959396362},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.512365460395813},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5007941722869873},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.49196645617485046},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.4873700737953186},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.47449398040771484},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.46736833453178406},{"id":"https://openalex.org/C71039073","wikidata":"https://www.wikidata.org/wiki/Q3439090","display_name":"Surface finish","level":2,"score":0.42063212394714355},{"id":"https://openalex.org/C540031477","wikidata":"https://www.wikidata.org/wiki/Q629","display_name":"Oxygen","level":2,"score":0.4204968810081482},{"id":"https://openalex.org/C107365816","wikidata":"https://www.wikidata.org/wiki/Q114817","display_name":"Surface roughness","level":2,"score":0.4171898663043976},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23324638605117798},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2176501452922821},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.1870611608028412},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.158972829580307},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.12293872237205505},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/asicon47005.2019.8983678","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon47005.2019.8983678","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 13th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-103527","is_oa":false,"landing_page_url":"http://repository.hkust.edu.hk/ir/Record/1783.1-103527","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference paper"},{"id":"pmh:oai:repository.ust.hk:1783.1-103527","is_oa":false,"landing_page_url":"http://www.scopus.com/record/display.url?eid=2-s2.0-85082614551&origin=inward","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Conference paper"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.6899999976158142,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1975792247","https://openalex.org/W2005037605","https://openalex.org/W2011877463","https://openalex.org/W2037719421","https://openalex.org/W2050878962","https://openalex.org/W2058382361","https://openalex.org/W2062616221","https://openalex.org/W2072813782","https://openalex.org/W2310118664","https://openalex.org/W2894950078","https://openalex.org/W4241358695","https://openalex.org/W4253680319"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2045553774","https://openalex.org/W2559825181","https://openalex.org/W4377089489","https://openalex.org/W1975307200","https://openalex.org/W2011001474","https://openalex.org/W2082133582","https://openalex.org/W2466887265","https://openalex.org/W2765886561"],"abstract_inverted_index":{"Digital":[0],"etching":[1,24],"is":[2],"an":[3],"effective":[4],"method":[5],"to":[6,73],"lower":[7],"dry":[8],"etch":[9,35,77],"damages":[10,82],"in":[11,38],"A1GaN/GaN":[12],"HEMTs.":[13],"This":[14],"work":[15],"systematically":[16],"investigated":[17],"O":[18],"<sub":[19],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[20],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[21],"-plasma-based":[22],"digital":[23],"of":[25,49],"AlGaN":[26,40],"and":[27,63],"p-GaN.":[28],"AlN":[29,51],"layers":[30,37],"were":[31,67],"used":[32],"as":[33,46],"the":[34,39,47,50,53,56,60,64],"stop":[36],"etch.":[41],"Important":[42],"process":[43],"aspects":[44],"such":[45],"use":[48],"layers,":[52],"RF":[54],"power,":[55],"oxygen":[57],"flow":[58],"rate,":[59],"oxidation":[61],"time":[62],"resulting":[65],"roughness":[66],"studied.":[68],"These":[69],"are":[70],"technically":[71],"relevant":[72],"obtain":[74],"controllable,":[75],"uniform":[76],"surfaces":[78],"with":[79],"low":[80],"surface":[81],"for":[83],"better":[84],"HEMT":[85],"performance.":[86]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2026-03-25T23:56:10.502304","created_date":"2025-10-10T00:00:00"}