{"id":"https://openalex.org/W3004844190","doi":"https://doi.org/10.1109/asicon47005.2019.8983459","title":"A Low-power High-reliability STT-MRAM Write Scheme with Real-time Voltage Sensing Module","display_name":"A Low-power High-reliability STT-MRAM Write Scheme with Real-time Voltage Sensing Module","publication_year":2019,"publication_date":"2019-10-01","ids":{"openalex":"https://openalex.org/W3004844190","doi":"https://doi.org/10.1109/asicon47005.2019.8983459","mag":"3004844190"},"language":"en","primary_location":{"id":"doi:10.1109/asicon47005.2019.8983459","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon47005.2019.8983459","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 13th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021913444","display_name":"Hao Li","orcid":"https://orcid.org/0000-0001-8871-7505"},"institutions":[{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Hao Li","raw_affiliation_strings":["School of Optical and Electronic Information, Huazhong University of Science and Technology,Wuhan,China,430074","School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China"],"affiliations":[{"raw_affiliation_string":"School of Optical and Electronic Information, Huazhong University of Science and Technology,Wuhan,China,430074","institution_ids":["https://openalex.org/I47720641"]},{"raw_affiliation_string":"School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I47720641"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102223131","display_name":"YU Hong-mei","orcid":null},"institutions":[{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongmei Yu","raw_affiliation_strings":["School of Optical and Electronic Information, Huazhong University of Science and Technology,Wuhan,China,430074","School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China"],"affiliations":[{"raw_affiliation_string":"School of Optical and Electronic Information, Huazhong University of Science and Technology,Wuhan,China,430074","institution_ids":["https://openalex.org/I47720641"]},{"raw_affiliation_string":"School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I47720641"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100440896","display_name":"Dongsheng Liu","orcid":"https://orcid.org/0000-0001-5571-1932"},"institutions":[{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dongsheng Liu","raw_affiliation_strings":["School of Optical and Electronic Information, Huazhong University of Science and Technology,Wuhan,China,430074","School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China"],"affiliations":[{"raw_affiliation_string":"School of Optical and Electronic Information, Huazhong University of Science and Technology,Wuhan,China,430074","institution_ids":["https://openalex.org/I47720641"]},{"raw_affiliation_string":"School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I47720641"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100346773","display_name":"Peng Liu","orcid":"https://orcid.org/0000-0001-9215-8670"},"institutions":[{"id":"https://openalex.org/I4210163926","display_name":"Zhejiang Medicine (China)","ror":"https://ror.org/05h86nk22","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210163926"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Peng Liu","raw_affiliation_strings":["Zhejiang Hikstor Technology Co., Ltd.,Hangzhou,China,311305","Zhejiang Hikstor Technology Co., Ltd., Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"Zhejiang Hikstor Technology Co., Ltd.,Hangzhou,China,311305","institution_ids":["https://openalex.org/I4210163926"]},{"raw_affiliation_string":"Zhejiang Hikstor Technology Co., Ltd., Hangzhou, China","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100461621","display_name":"Bo Liu","orcid":"https://orcid.org/0000-0002-0894-1054"},"institutions":[{"id":"https://openalex.org/I4210163926","display_name":"Zhejiang Medicine (China)","ror":"https://ror.org/05h86nk22","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210163926"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bo Liu","raw_affiliation_strings":["Zhejiang Hikstor Technology Co., Ltd.,Hangzhou,China,311305","Zhejiang Hikstor Technology Co., Ltd., Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"Zhejiang Hikstor Technology Co., Ltd.,Hangzhou,China,311305","institution_ids":["https://openalex.org/I4210163926"]},{"raw_affiliation_string":"Zhejiang Hikstor Technology Co., Ltd., Hangzhou, China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5021913444"],"corresponding_institution_ids":["https://openalex.org/I47720641"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.16253393,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.8886513710021973},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7494302988052368},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5720491409301758},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.506712019443512},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.49638253450393677},{"id":"https://openalex.org/keywords/scheme","display_name":"Scheme (mathematics)","score":0.446257621049881},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4248437285423279},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.39320138096809387},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.37892359495162964},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.2554668188095093},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15993401408195496},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.15225985646247864},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.0879267156124115}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.8886513710021973},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7494302988052368},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5720491409301758},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.506712019443512},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.49638253450393677},{"id":"https://openalex.org/C77618280","wikidata":"https://www.wikidata.org/wiki/Q1155772","display_name":"Scheme (mathematics)","level":2,"score":0.446257621049881},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4248437285423279},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.39320138096809387},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.37892359495162964},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.2554668188095093},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15993401408195496},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.15225985646247864},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0879267156124115},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon47005.2019.8983459","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon47005.2019.8983459","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 13th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1988773816","https://openalex.org/W2333378010","https://openalex.org/W4200319682","https://openalex.org/W4250716500"],"related_works":["https://openalex.org/W2033512842","https://openalex.org/W4322734194","https://openalex.org/W4233600955","https://openalex.org/W2913665393","https://openalex.org/W2369695847","https://openalex.org/W3005535424","https://openalex.org/W2994319598","https://openalex.org/W2047067935","https://openalex.org/W1607054433","https://openalex.org/W2110842462"],"abstract_inverted_index":{"Spin":[0],"transfer":[1],"torque":[2],"magnetic":[3],"random":[4],"access":[5],"memory":[6,12],"(STT-MRAM)":[7],"is":[8,14,91,108,113,131,137],"an":[9],"emerging":[10],"non-volatile":[11],"and":[13,38,55,71,93,120,128,133],"regarded":[15],"as":[16,69],"a":[17,46],"next":[18],"generation":[19],"memory.":[20],"Efforts":[21],"have":[22],"been":[23],"made":[24],"in":[25,95],"its":[26],"write":[27,36,49,83,106,126,129,152],"scheme,":[28,119],"but":[29],"the":[30,64,73,77,117,121,142],"proposed":[31],"schemes":[32],"suffer":[33],"from":[34],"high":[35,151],"power":[37,107],"reliability":[39],"issues.":[40],"In":[41],"this":[42],"paper,":[43],"we":[44],"propose":[45],"low-power":[47],"high-reliability":[48],"scheme":[50,90],"with":[51],"real-time":[52],"voltage":[53],"sensing":[54],"control":[56],"module.":[57],"Write":[58],"operations":[59,84],"are":[60],"immediately":[61],"terminated":[62,87],"when":[63,72],"states":[65],"of":[66,125],"cells":[67],"switch":[68],"desire,":[70],"current":[74],"state":[75,78],"match":[76],"to":[79,146,149],"be":[80,86],"switched":[81],"into,":[82],"will":[85],"directly.":[88],"The":[89],"implemented":[92],"simulated":[94],"SMIC":[96],"40nm":[97],"Logic":[98],"Low":[99],"Leakage":[100],"process.":[101],"Simulation":[102],"results":[103],"show":[104],"that":[105],"0.106pJ/bit":[109],"on":[110],"average,":[111],"which":[112,136],"62.5%":[114],"less":[115],"than":[116,141],"traditional":[118],"effective":[122],"judgment":[123],"range":[124],"\u201c0\u201d":[127],"\u201c1\u201d":[130],"408mV":[132],"275mV":[134],"respectively":[135],"3.15":[138],"times":[139],"larger":[140],"best":[143],"previously":[144],"result":[145],"our":[147],"knowledge":[148],"reach":[150],"reliability.":[153]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}