{"id":"https://openalex.org/W2782584938","doi":"https://doi.org/10.1109/asicon.2017.8252562","title":"The enhancement mode AlGaN/GaN high electron mobility transistor based on charge storage","display_name":"The enhancement mode AlGaN/GaN high electron mobility transistor based on charge storage","publication_year":2017,"publication_date":"2017-10-01","ids":{"openalex":"https://openalex.org/W2782584938","doi":"https://doi.org/10.1109/asicon.2017.8252562","mag":"2782584938"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2017.8252562","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2017.8252562","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 12th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100460862","display_name":"Hui Wang","orcid":"https://orcid.org/0000-0002-9524-8337"},"institutions":[{"id":"https://openalex.org/I4210166055","display_name":"Shenzhen Third People\u2019s Hospital","ror":"https://ror.org/04xfsbk97","country_code":"CN","type":"healthcare","lineage":["https://openalex.org/I4210166055"]},{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Hui Wang","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China","Shenzhen Key Laborary of The Third Generation Semi-conductor, Shenzhen, Guangdong, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China","institution_ids":["https://openalex.org/I3045169105"]},{"raw_affiliation_string":"Shenzhen Key Laborary of The Third Generation Semi-conductor, Shenzhen, Guangdong, China","institution_ids":["https://openalex.org/I4210166055"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085645845","display_name":"Lingli Jiang","orcid":null},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lingli Jiang","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100387115","display_name":"Ning Wang","orcid":"https://orcid.org/0000-0002-1391-9441"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ning Wang","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101181775","display_name":"Xinpeng Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinpeng Lin","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101765075","display_name":"Hongyu Yu","orcid":"https://orcid.org/0000-0002-5756-868X"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongyu Yu","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China","institution_ids":["https://openalex.org/I3045169105"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5100460862"],"corresponding_institution_ids":["https://openalex.org/I3045169105","https://openalex.org/I4210166055"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.16441441,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"1","issue":null,"first_page":"662","last_page":"665"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8740333318710327},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.6210595965385437},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6008385419845581},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5793478488922119},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5378427505493164},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.5009214878082275},{"id":"https://openalex.org/keywords/stack","display_name":"Stack (abstract data type)","score":0.45536890625953674},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44733676314353943},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3481718897819519},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.20757830142974854},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12764877080917358}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8740333318710327},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6210595965385437},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6008385419845581},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5793478488922119},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5378427505493164},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.5009214878082275},{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.45536890625953674},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44733676314353943},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3481718897819519},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.20757830142974854},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12764877080917358},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2017.8252562","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2017.8252562","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 12th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8500000238418579,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1968619242","https://openalex.org/W2016558966","https://openalex.org/W2058170232","https://openalex.org/W2079339066","https://openalex.org/W2124964377","https://openalex.org/W2130625258","https://openalex.org/W2610230762","https://openalex.org/W3150050634","https://openalex.org/W4300752226"],"related_works":["https://openalex.org/W4390729576","https://openalex.org/W2532810475","https://openalex.org/W2171730916","https://openalex.org/W1943995216","https://openalex.org/W1986136028","https://openalex.org/W2162684047","https://openalex.org/W2098291540","https://openalex.org/W1992369447","https://openalex.org/W2895652696","https://openalex.org/W4327744209"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"sums":[4],"up":[5],"our":[6],"resent":[7],"progress":[8],"on":[9,22],"the":[10,26,33,42,45,52,56,63,67,71,83,90,97,106,117,121,124,134,151,162],"enhancement-mode":[11],"(E-mode)":[12],"AlGaN/GaN":[13],"high":[14],"electron":[15,61],"mobility":[16],"transistors":[17],"(HEMTs)":[18],"which":[19],"are":[20,78,86,126],"based":[21],"charge":[23,54,103],"storage,":[24],"including":[25],"split":[27],"floating":[28],"gates":[29],"(FGs)":[30],"HEMT":[31,85,91,156],"and":[32,73,120,132],"one":[34],"with":[35,51,92,116],"oxide-SiN-oxide":[36],"(ONO)":[37],"gate":[38,94,163],"dielectrics":[39,95,125],"stack.":[40],"For":[41,89],"FGs":[43,77,84],"HEMT,":[44],"V":[46,111,135],"<sub":[47,112,136],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[48,113,137],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">th</sub>":[49,114,138],"variation":[50,115],"polarization":[53],"density,":[55],"density":[57],"of":[58,76,82,123,154],"two":[59],"dimensional":[60],"gas,":[62],"tunnel":[64],"dielectric":[65,69,164],"thickness,":[66,70],"blocking":[68],"length":[72],"isolating":[74],"spacing":[75],"presented.":[79,127],"The":[80,110],"reliability":[81],"also":[87],"revealed.":[88],"ONO":[93],"stack,":[96],"E-mode":[98],"is":[99,148],"realized":[100],"by":[101,160],"negative":[102],"storage":[104],"within":[105],"SiN":[107],"trap":[108],"layer.":[109],"programming":[118,130],"condition":[119],"thickness":[122],"Under":[128],"proper":[129],"voltage":[131,153],"time,":[133],"can":[139,157],"be":[140,158],"increased":[141],"to":[142],"more":[143],"than":[144],"2V.":[145],"Moreover,":[146],"it":[147],"found":[149],"that":[150],"breakdown":[152],"such":[155],"adjusted":[159],"varying":[161],"stacks.":[165]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}