{"id":"https://openalex.org/W7129398722","doi":"https://doi.org/10.1109/access.2026.3665692","title":"Effects of Programming-Pulse Frequency on Synaptic Characteristics of Amorphous IGZO Thin-Film Transistors With Defective Gate Oxides","display_name":"Effects of Programming-Pulse Frequency on Synaptic Characteristics of Amorphous IGZO Thin-Film Transistors With Defective Gate Oxides","publication_year":2026,"publication_date":"2026-01-01","ids":{"openalex":"https://openalex.org/W7129398722","doi":"https://doi.org/10.1109/access.2026.3665692"},"language":"en","primary_location":{"id":"doi:10.1109/access.2026.3665692","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2026.3665692","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2026.3665692","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5039756139","display_name":"Danyoung Cha","orcid":"https://orcid.org/0000-0002-4713-7579"},"institutions":[{"id":"https://openalex.org/I4921948","display_name":"Pusan National University","ror":"https://ror.org/01an57a31","country_code":"KR","type":"education","lineage":["https://openalex.org/I4921948"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Danyoung Cha","raw_affiliation_strings":["Pusan National University (a Semiconductor-Specialized University), Busan, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0002-4713-7579","affiliations":[{"raw_affiliation_string":"Pusan National University (a Semiconductor-Specialized University), Busan, Republic of Korea","institution_ids":["https://openalex.org/I4921948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114172718","display_name":"Jeongseok Pi","orcid":null},"institutions":[{"id":"https://openalex.org/I4921948","display_name":"Pusan National University","ror":"https://ror.org/01an57a31","country_code":"KR","type":"education","lineage":["https://openalex.org/I4921948"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jeongseok Pi","raw_affiliation_strings":["Department of Electronics Engineering, Pusan National University, Busan, Republic of Korea"],"raw_orcid":"https://orcid.org/0009-0000-5639-2793","affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Pusan National University, Busan, Republic of Korea","institution_ids":["https://openalex.org/I4921948"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5126181065","display_name":"Sungsik Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I4921948","display_name":"Pusan National University","ror":"https://ror.org/01an57a31","country_code":"KR","type":"education","lineage":["https://openalex.org/I4921948"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sungsik Lee","raw_affiliation_strings":["Department of Electronics Engineering, Pusan National University, Busan, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0002-5523-8476","affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Pusan National University, Busan, Republic of Korea","institution_ids":["https://openalex.org/I4921948"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.19495292,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"14","issue":null,"first_page":"27665","last_page":"27674"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9850000143051147,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9850000143051147,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.0044999998062849045,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.00279999990016222,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6416000127792358},{"id":"https://openalex.org/keywords/amorphous-solid","display_name":"Amorphous solid","score":0.620199978351593},{"id":"https://openalex.org/keywords/retention-time","display_name":"Retention time","score":0.582099974155426},{"id":"https://openalex.org/keywords/pulse","display_name":"Pulse (music)","score":0.569599986076355},{"id":"https://openalex.org/keywords/trap","display_name":"Trap (plumbing)","score":0.5148000121116638},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.4810999929904938},{"id":"https://openalex.org/keywords/thin-film-transistor","display_name":"Thin-film transistor","score":0.47999998927116394},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.43529999256134033},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.40369999408721924}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7544999718666077},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6416000127792358},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6353999972343445},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.620199978351593},{"id":"https://openalex.org/C3020018676","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Retention time","level":2,"score":0.582099974155426},{"id":"https://openalex.org/C2780167933","wikidata":"https://www.wikidata.org/wiki/Q1550652","display_name":"Pulse (music)","level":3,"score":0.569599986076355},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.5148000121116638},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4810999929904938},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.47999998927116394},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.43529999256134033},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.40369999408721924},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4009999930858612},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.4000000059604645},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.3995000123977661},{"id":"https://openalex.org/C2986058073","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Dynamic stress","level":3,"score":0.37770000100135803},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.36010000109672546},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.3580999970436096},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3411000072956085},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.3395000100135803},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.33649998903274536},{"id":"https://openalex.org/C37404715","wikidata":"https://www.wikidata.org/wiki/Q380679","display_name":"Dynamic programming","level":2,"score":0.3179999887943268},{"id":"https://openalex.org/C95121573","wikidata":"https://www.wikidata.org/wiki/Q190474","display_name":"Activation energy","level":2,"score":0.3034000098705292},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.29919999837875366},{"id":"https://openalex.org/C2909211665","wikidata":"https://www.wikidata.org/wiki/Q492","display_name":"Memory retention","level":2,"score":0.2948000133037567},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.2867000102996826},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28349998593330383},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.2766000032424927},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.2750999927520752},{"id":"https://openalex.org/C118702147","wikidata":"https://www.wikidata.org/wiki/Q189396","display_name":"Dynamic random-access memory","level":3,"score":0.2590000033378601},{"id":"https://openalex.org/C73500089","wikidata":"https://www.wikidata.org/wiki/Q2445876","display_name":"Hot-carrier injection","level":4,"score":0.2572000026702881},{"id":"https://openalex.org/C66949984","wikidata":"https://www.wikidata.org/wiki/Q7662043","display_name":"Synaptic weight","level":3,"score":0.2531999945640564}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2026.3665692","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2026.3665692","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:346e45fa29ed4d65bf7602cf5bdb3dbc","is_oa":true,"landing_page_url":"https://doaj.org/article/346e45fa29ed4d65bf7602cf5bdb3dbc","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 14, Pp 27665-27674 (2026)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2026.3665692","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2026.3665692","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.714408814907074,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321284","display_name":"Pusan National University","ror":"https://ror.org/01an57a31"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":[],"abstract_inverted_index":{"We":[0],"present":[1],"a":[2,100,129,202,208],"study":[3],"on":[4,8,71],"synaptic":[5,164],"behaviors":[6],"dependent":[7],"the":[9,45,51,68,72,75,94,118,143,163,174,179,191,214,218,226,231],"programming-pulse":[10],"frequency":[11],"(PPF)":[12],"of":[13,36,48,128],"amorphous":[14],"In-Ga-Zn-O":[15],"thin-film":[16],"transistors":[17],"(a-IGZO":[18],"TFTs).":[19],"Specifically,":[20],"weight-update":[21],"and":[22,28,65,87,108,139,194],"retention":[23,29,110,195,233],"characteristics":[24],"(e.g.,":[25,82,106,112],"dynamic":[26,104,192],"ratio":[27,105,193],"time)":[30],"with":[31,78],"respect":[32],"to":[33,225],"different":[34,80,158],"PPFs":[35,81],"fabricated":[37],"a-IGZO":[38,49],"TFTs":[39],"are":[40,90,123,197],"investigated,":[41],"respectively.":[42,149],"Here,":[43],"for":[44,117,136,146,168,206],"memory":[46,73],"functionality":[47],"TFTs,":[50],"defective":[52],"oxide":[53],"(i.e.,":[54],"SiO<sub":[55],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[56,114],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">x</sub>)":[57],"deposited":[58],"at":[59,142],"low":[60,131],"temperature":[61],"enables":[62],"electron":[63],"trapping":[64],"de-trapping.":[66],"For":[67],"experiment":[69,167],"based":[70],"function,":[74],"positive":[76,203],"programming-pulses":[77],"three":[79],"0.125":[83,147],"Hz,":[84,86,148,185],"0.25":[85,121,184],"0.5":[88,137],"Hz)":[89],"applied,":[91],"while":[92],"keeping":[93],"total":[95],"programming":[96,134,175,210],"energy":[97,132],"constant.":[98],"As":[99],"result,":[101],"an":[102],"appropriate":[103],"266)":[107],"longer":[109,209],"time":[111,196,211],"9\u00d710<sup":[113],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sup>":[115],"sec)":[116],"PPF":[119,170,180],"=":[120],"Hz":[122,138],"observed.":[124],"This":[125,199],"is":[126,155,171,181,187,200],"because":[127,201],"relatively":[130],"per":[133],"pulse":[135,159,176],"long":[140],"recovery":[141],"read":[144],"process":[145],"Besides":[150],"this":[151],"experiment,":[152],"since":[153],"it":[154,186],"expected":[156],"that":[157,189],"heights":[160],"can":[161,212],"affect":[162],"characteristics,":[165],"another":[166],"each":[169],"performed":[172],"maintaining":[173],"area.":[177],"When":[178],"reduced":[182],"from":[183],"found":[188],"both":[190],"increased.":[198],"bias":[204],"stress":[205],"applying":[207],"suppress":[213],"electrons":[215],"de-trapping":[216],"toward":[217],"channel":[219],"as":[220,222],"well":[221],"further":[223],"moves":[224],"deep":[227],"trap":[228],"states,":[229],"implying":[230],"enhanced":[232],"characteristics.":[234]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2026-02-18T00:00:00"}