{"id":"https://openalex.org/W3043882097","doi":"https://doi.org/10.1109/access.2020.3011453","title":"An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs","display_name":"An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs","publication_year":2020,"publication_date":"2020-01-01","ids":{"openalex":"https://openalex.org/W3043882097","doi":"https://doi.org/10.1109/access.2020.3011453","mag":"3043882097"},"language":"en","primary_location":{"id":"doi:10.1109/access.2020.3011453","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.3011453","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09146610.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09146610.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5032031919","display_name":"Roshan L. Kini","orcid":"https://orcid.org/0000-0002-9347-2714"},"institutions":[{"id":"https://openalex.org/I90871651","display_name":"University of Toledo","ror":"https://ror.org/01pbdzh19","country_code":"US","type":"education","lineage":["https://openalex.org/I90871651"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Roshan L. Kini","raw_affiliation_strings":["The University of Toledo, Toledo, USA"],"raw_orcid":"https://orcid.org/0000-0002-9347-2714","affiliations":[{"raw_affiliation_string":"The University of Toledo, Toledo, USA","institution_ids":["https://openalex.org/I90871651"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036723704","display_name":"Shankar Dhakal","orcid":null},"institutions":[{"id":"https://openalex.org/I90871651","display_name":"University of Toledo","ror":"https://ror.org/01pbdzh19","country_code":"US","type":"education","lineage":["https://openalex.org/I90871651"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shankar Dhakal","raw_affiliation_strings":["The University of Toledo, Toledo, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The University of Toledo, Toledo, USA","institution_ids":["https://openalex.org/I90871651"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078730811","display_name":"Sadab Mahmud","orcid":"https://orcid.org/0000-0001-8502-4770"},"institutions":[{"id":"https://openalex.org/I90871651","display_name":"University of Toledo","ror":"https://ror.org/01pbdzh19","country_code":"US","type":"education","lineage":["https://openalex.org/I90871651"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sadab Mahmud","raw_affiliation_strings":["The University of Toledo, Toledo, USA"],"raw_orcid":"https://orcid.org/0000-0001-8502-4770","affiliations":[{"raw_affiliation_string":"The University of Toledo, Toledo, USA","institution_ids":["https://openalex.org/I90871651"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001911595","display_name":"Andrew Sellers","orcid":"https://orcid.org/0000-0002-5845-3390"},"institutions":[{"id":"https://openalex.org/I90871651","display_name":"University of Toledo","ror":"https://ror.org/01pbdzh19","country_code":"US","type":"education","lineage":["https://openalex.org/I90871651"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Andrew J. Sellers","raw_affiliation_strings":["The University of Toledo, Toledo, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The University of Toledo, Toledo, USA","institution_ids":["https://openalex.org/I90871651"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044527024","display_name":"Michael R. Hontz","orcid":"https://orcid.org/0000-0001-5903-7666"},"institutions":[{"id":"https://openalex.org/I90871651","display_name":"University of Toledo","ror":"https://ror.org/01pbdzh19","country_code":"US","type":"education","lineage":["https://openalex.org/I90871651"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael R. Hontz","raw_affiliation_strings":["The University of Toledo, Toledo, USA"],"raw_orcid":"https://orcid.org/0000-0001-5903-7666","affiliations":[{"raw_affiliation_string":"The University of Toledo, Toledo, USA","institution_ids":["https://openalex.org/I90871651"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031840992","display_name":"Cheikh Tine","orcid":null},"institutions":[{"id":"https://openalex.org/I90871651","display_name":"University of Toledo","ror":"https://ror.org/01pbdzh19","country_code":"US","type":"education","lineage":["https://openalex.org/I90871651"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Cheikh A. Tine","raw_affiliation_strings":["The University of Toledo, Toledo, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The University of Toledo, Toledo, USA","institution_ids":["https://openalex.org/I90871651"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5046081642","display_name":"Raghav Khanna","orcid":"https://orcid.org/0000-0001-9654-1626"},"institutions":[{"id":"https://openalex.org/I90871651","display_name":"University of Toledo","ror":"https://ror.org/01pbdzh19","country_code":"US","type":"education","lineage":["https://openalex.org/I90871651"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Raghav Khanna","raw_affiliation_strings":["The University of Toledo, Toledo, USA"],"raw_orcid":"https://orcid.org/0000-0001-9654-1626","affiliations":[{"raw_affiliation_string":"The University of Toledo, Toledo, USA","institution_ids":["https://openalex.org/I90871651"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I90871651"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.7069,"has_fulltext":true,"cited_by_count":9,"citation_normalized_percentile":{"value":0.67925289,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"8","issue":null,"first_page":"137312","last_page":"137321"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7093381285667419},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.6736264228820801},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6693246960639954},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.605835497379303},{"id":"https://openalex.org/keywords/overshoot","display_name":"Overshoot (microwave communication)","score":0.5892711877822876},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5622269511222839},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.45880308747291565},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.41747790575027466},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4157332181930542},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.38435664772987366},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.29279690980911255},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12041625380516052},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08231678605079651},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.07673424482345581}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7093381285667419},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.6736264228820801},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6693246960639954},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.605835497379303},{"id":"https://openalex.org/C2780323453","wikidata":"https://www.wikidata.org/wiki/Q7113957","display_name":"Overshoot (microwave communication)","level":2,"score":0.5892711877822876},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5622269511222839},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.45880308747291565},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.41747790575027466},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4157332181930542},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.38435664772987366},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.29279690980911255},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12041625380516052},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08231678605079651},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.07673424482345581},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2020.3011453","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.3011453","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09146610.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:f4478f59f946440da236511f63710c30","is_oa":true,"landing_page_url":"https://doaj.org/article/f4478f59f946440da236511f63710c30","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 8, Pp 137312-137321 (2020)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2020.3011453","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.3011453","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09146610.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G7926638395","display_name":null,"funder_award_id":"N00014-18-2676","funder_id":"https://openalex.org/F4320337345","funder_display_name":"Office of Naval Research"},{"id":"https://openalex.org/G8876996369","display_name":null,"funder_award_id":"N00014","funder_id":"https://openalex.org/F4320337345","funder_display_name":"Office of Naval Research"}],"funders":[{"id":"https://openalex.org/F4320337345","display_name":"Office of Naval Research","ror":"https://ror.org/00rk2pe57"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":33,"referenced_works":["https://openalex.org/W1482341924","https://openalex.org/W1647263512","https://openalex.org/W1968619242","https://openalex.org/W1973980126","https://openalex.org/W1986673323","https://openalex.org/W1989716345","https://openalex.org/W1992988771","https://openalex.org/W2014479463","https://openalex.org/W2018982655","https://openalex.org/W2025505207","https://openalex.org/W2032664993","https://openalex.org/W2090390568","https://openalex.org/W2101919038","https://openalex.org/W2115067661","https://openalex.org/W2127633542","https://openalex.org/W2128432918","https://openalex.org/W2131479949","https://openalex.org/W2141981815","https://openalex.org/W2159764454","https://openalex.org/W2161008950","https://openalex.org/W2165878638","https://openalex.org/W2305626453","https://openalex.org/W2343327181","https://openalex.org/W2461874365","https://openalex.org/W2515256841","https://openalex.org/W2584889330","https://openalex.org/W2604148345","https://openalex.org/W2620750081","https://openalex.org/W2765565186","https://openalex.org/W2955593627","https://openalex.org/W3017116377","https://openalex.org/W4252299010","https://openalex.org/W7045922343"],"related_works":["https://openalex.org/W2540667912","https://openalex.org/W1971393305","https://openalex.org/W3098904880","https://openalex.org/W2995199523","https://openalex.org/W2084872199","https://openalex.org/W2132872602","https://openalex.org/W2892024203","https://openalex.org/W2999187754","https://openalex.org/W2104841496","https://openalex.org/W2621126165"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,36,42,85],"frequency":[4],"dependent":[5],"reliability":[6],"study":[7],"of":[8,26,52,80,107,123,132,140,156],"commercially":[9],"available":[10],"GaN":[11],"HEMTs.":[12],"Both":[13],"circuit":[14,63],"and":[15,54,74,89,92,154],"device-level":[16,24],"experiments":[17],"were":[18],"performed":[19,34],"to":[20,100],"better":[21],"understand":[22],"the":[23,59,62,104,137,141,157,162],"cause":[25],"degradation.":[27,102],"It":[28],"was":[29,143],"determined":[30],"through":[31,161],"step-frequency":[32],"analysis":[33,155],"in":[35,87,94],"boost":[37],"converter":[38,60,70],"that":[39],"there":[40],"is":[41],"frequency-dependent":[43],"device":[44,101,142],"degradation":[45,53],"for":[46],"positive":[47],"gate":[48,72,75,95,138,146,163],"stress.":[49],"The":[50,78,129],"point":[51],"its":[55],"primary":[56],"effect":[57],"on":[58],"before":[61],"ultimately":[64],"failed":[65],"have":[66],"been":[67,111],"analyzed":[68],"with":[69,136],"efficiency,":[71],"current,":[73,96],"voltage":[76,90],"overshoot.":[77],"findings":[79],"this":[81],"experiment":[82],"clearly":[83],"show":[84,120],"decline":[86],"efficiency":[88],"overshoot":[91],"increment":[93],"which":[97],"are":[98],"linked":[99],"Furthermore,":[103],"recovery":[105,124,127],"behavior":[106],"degraded":[108],"devices":[109,117],"has":[110],"investigated.":[112],"However,":[113],"after":[114],"initial":[115],"degradation,":[116],"did":[118],"not":[119],"any":[121],"signs":[122],"over":[125],"twenty-four-hour":[126],"periods.":[128],"causal":[130],"origin":[131],"these":[133],"phenomena":[134],"associated":[135],"structure":[139],"established":[144],"by":[145],"step-stress":[147],"testing":[148],"as":[149,151],"well":[150],"an":[152],"examination":[153],"possible":[158],"conduction":[159],"mechanisms":[160],"structure.":[164]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":1}],"updated_date":"2026-07-29T09:40:50.615796","created_date":"2025-10-10T00:00:00"}