{"id":"https://openalex.org/W1987201174","doi":"https://doi.org/10.1109/acc.2001.945899","title":"Multi-variable adaptive control of CF/sub 4//O/sub 2/ plasma etching of silicon nitride thin films","display_name":"Multi-variable adaptive control of CF/sub 4//O/sub 2/ plasma etching of silicon nitride thin films","publication_year":2001,"publication_date":"2001-01-01","ids":{"openalex":"https://openalex.org/W1987201174","doi":"https://doi.org/10.1109/acc.2001.945899","mag":"1987201174"},"language":"en","primary_location":{"id":"doi:10.1109/acc.2001.945899","is_oa":false,"landing_page_url":"https://doi.org/10.1109/acc.2001.945899","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2001 American Control Conference. (Cat. No.01CH37148)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5001551882","display_name":"Bar\u0131\u015f Fi\u0307dan","orcid":"https://orcid.org/0000-0002-5333-0201"},"institutions":[{"id":"https://openalex.org/I1174212","display_name":"University of Southern California","ror":"https://ror.org/03taz7m60","country_code":"US","type":"education","lineage":["https://openalex.org/I1174212"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"B. Fidan","raw_affiliation_strings":["Center for the Intelligent Manufacturing of Semiconductors (CIMOS), University of Southern California, Los Alamos, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for the Intelligent Manufacturing of Semiconductors (CIMOS), University of Southern California, Los Alamos, CA, USA","institution_ids":["https://openalex.org/I1174212"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042461595","display_name":"I. G. Rosen","orcid":"https://orcid.org/0000-0001-6801-9769"},"institutions":[{"id":"https://openalex.org/I1174212","display_name":"University of Southern California","ror":"https://ror.org/03taz7m60","country_code":"US","type":"education","lineage":["https://openalex.org/I1174212"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"I.G. Rosen","raw_affiliation_strings":["Center for the Intelligent Manufacturing of Semiconductors (CIMOS), University of Southern California, Los Alamos, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for the Intelligent Manufacturing of Semiconductors (CIMOS), University of Southern California, Los Alamos, CA, USA","institution_ids":["https://openalex.org/I1174212"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075824290","display_name":"T. Parent","orcid":null},"institutions":[{"id":"https://openalex.org/I1174212","display_name":"University of Southern California","ror":"https://ror.org/03taz7m60","country_code":"US","type":"education","lineage":["https://openalex.org/I1174212"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"T. Parent","raw_affiliation_strings":["Center for the Intelligent Manufacturing of Semiconductors (CIMOS), University of Southern California, Los Alamos, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for the Intelligent Manufacturing of Semiconductors (CIMOS), University of Southern California, Los Alamos, CA, USA","institution_ids":["https://openalex.org/I1174212"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063645064","display_name":"A. Madhukar","orcid":"https://orcid.org/0000-0002-1044-1681"},"institutions":[{"id":"https://openalex.org/I1174212","display_name":"University of Southern California","ror":"https://ror.org/03taz7m60","country_code":"US","type":"education","lineage":["https://openalex.org/I1174212"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Madhukar","raw_affiliation_strings":["Center for the Intelligent Manufacturing of Semiconductors (CIMOS), University of Southern California, Los Alamos, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for the Intelligent Manufacturing of Semiconductors (CIMOS), University of Southern California, Los Alamos, CA, USA","institution_ids":["https://openalex.org/I1174212"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1174212"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.11793725,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1280","last_page":"1285 vol.2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10377","display_name":"Metal and Thin Film Mechanics","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/etching","display_name":"Etching (microfabrication)","score":0.7650778293609619},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6523841619491577},{"id":"https://openalex.org/keywords/silicon-nitride","display_name":"Silicon nitride","score":0.624559223651886},{"id":"https://openalex.org/keywords/electron-cyclotron-resonance","display_name":"Electron cyclotron resonance","score":0.5943493843078613},{"id":"https://openalex.org/keywords/plasma-enhanced-chemical-vapor-deposition","display_name":"Plasma-enhanced chemical vapor deposition","score":0.5828112959861755},{"id":"https://openalex.org/keywords/thin-film","display_name":"Thin film","score":0.5052729249000549},{"id":"https://openalex.org/keywords/chamber-pressure","display_name":"Chamber pressure","score":0.5050438046455383},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.48470640182495117},{"id":"https://openalex.org/keywords/plasma-etching","display_name":"Plasma etching","score":0.4822043180465698},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4772351086139679},{"id":"https://openalex.org/keywords/reactive-ion-etching","display_name":"Reactive-ion etching","score":0.45861104130744934},{"id":"https://openalex.org/keywords/dry-etching","display_name":"Dry etching","score":0.43232131004333496},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.3909010589122772},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.3846455216407776},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2714500427246094},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2278139293193817},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.19907692074775696},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10784518718719482},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.06588754057884216}],"concepts":[{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.7650778293609619},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6523841619491577},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.624559223651886},{"id":"https://openalex.org/C175361016","wikidata":"https://www.wikidata.org/wiki/Q245591","display_name":"Electron cyclotron resonance","level":3,"score":0.5943493843078613},{"id":"https://openalex.org/C38347018","wikidata":"https://www.wikidata.org/wiki/Q905958","display_name":"Plasma-enhanced chemical vapor deposition","level":3,"score":0.5828112959861755},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5052729249000549},{"id":"https://openalex.org/C2777859621","wikidata":"https://www.wikidata.org/wiki/Q17086736","display_name":"Chamber pressure","level":2,"score":0.5050438046455383},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.48470640182495117},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.4822043180465698},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4772351086139679},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.45861104130744934},{"id":"https://openalex.org/C1291036","wikidata":"https://www.wikidata.org/wiki/Q1191918","display_name":"Dry etching","level":4,"score":0.43232131004333496},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3909010589122772},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.3846455216407776},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2714500427246094},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2278139293193817},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.19907692074775696},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10784518718719482},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06588754057884216},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/acc.2001.945899","is_oa":false,"landing_page_url":"https://doi.org/10.1109/acc.2001.945899","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2001 American Control Conference. (Cat. No.01CH37148)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.47999998927116394,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2012785390","https://openalex.org/W2030590425","https://openalex.org/W2065565835"],"related_works":["https://openalex.org/W2045553774","https://openalex.org/W2093631838","https://openalex.org/W2542354647","https://openalex.org/W4387743859","https://openalex.org/W2088854890","https://openalex.org/W2011001474","https://openalex.org/W2082133582","https://openalex.org/W2466887265","https://openalex.org/W2046861793","https://openalex.org/W2765886561"],"abstract_inverted_index":{"A":[0],"two":[1],"input":[2],"real":[3],"time":[4],"feedback":[5,58],"adaptive":[6,60,75],"controller":[7,76,108],"for":[8],"the":[9,55,88,93,101,104],"electron":[10],"cyclotron":[11],"resonance":[12],"(ECR)":[13],"CF/sub":[14],"4//O/sub":[15],"2/":[16],"plasma":[17,20,52,94],"etching":[18,53,67,105],"of":[19,57,68],"enhanced":[21],"chemical":[22],"vapor":[23],"deposited":[24],"(PECVD)":[25],"silicon":[26],"nitride":[27],"thin":[28],"films":[29],"is":[30,77,109],"designed":[31,78],"and":[32,59,65,95],"simulation":[33,113],"tested.":[34],"Variations":[35],"in":[36,103],"etch":[37,44,84],"rate":[38,85],"resulting":[39],"from":[40],"factors":[41],"such":[42],"as":[43],"chamber":[45],"wall":[46],"seasoning":[47],"which":[48,79,91,99],"are":[49],"inherent":[50],"to":[51,62],"necessitate":[54],"use":[56],"control":[61],"achieve":[63],"precise":[64],"reliable":[66],"ultra-thin":[69],"films.":[70],"In":[71],"this":[72],"paper,":[73],"an":[74],"maintains":[80],"a":[81,96,112],"constant":[82],"desired":[83],"by":[86],"adjusting":[87],"microwave":[89],"power":[90],"drives":[92],"throttle":[97],"valve":[98],"determines":[100],"pressure":[102],"chamber.":[106],"The":[107],"tested":[110],"using":[111],"based":[114],"upon":[115],"laboratory":[116],"empirical":[117],"data.":[118]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}