{"id":"https://openalex.org/W2012595012","doi":"https://doi.org/10.1109/4.987094","title":"V/sub TH/-hopping scheme to reduce subthreshold leakage for low-power processors","display_name":"V/sub TH/-hopping scheme to reduce subthreshold leakage for low-power processors","publication_year":2002,"publication_date":"2002-03-01","ids":{"openalex":"https://openalex.org/W2012595012","doi":"https://doi.org/10.1109/4.987094","mag":"2012595012"},"language":"en","primary_location":{"id":"doi:10.1109/4.987094","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.987094","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111797901","display_name":"Keisuke Nose","orcid":null},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Nose","raw_affiliation_strings":["Institute of Industrial Science, University of Tokyo, Tokyo, Japan","Inst. of Ind. Sci., Univ. of Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Industrial Science, University of Tokyo, Tokyo, Japan","institution_ids":[]},{"raw_affiliation_string":"Inst. of Ind. Sci., Univ. of Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112314844","display_name":"Megumi Hirabayashi","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Hirabayashi","raw_affiliation_strings":["Institute of Industrial Science, University of Tokyo, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Industrial Science, University of Tokyo, Tokyo, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052940529","display_name":"Hiroshi Kawaguchi","orcid":"https://orcid.org/0000-0001-8677-4733"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"H. Kawaguchi","raw_affiliation_strings":["Institute of Industrial Science, University of Tokyo, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Industrial Science, University of Tokyo, Tokyo, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101569498","display_name":"Seongsoo Lee","orcid":"https://orcid.org/0000-0002-3407-6236"},"institutions":[{"id":"https://openalex.org/I138925566","display_name":"Ewha Womans University","ror":"https://ror.org/053fp5c05","country_code":"KR","type":"education","lineage":["https://openalex.org/I138925566"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seongsoo Lee","raw_affiliation_strings":["Department of Information Electronics, Ewha University, Seoul, South Korea","[Department of Information Electronics, Ewha University, Seoul, South Korea]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Information Electronics, Ewha University, Seoul, South Korea","institution_ids":[]},{"raw_affiliation_string":"[Department of Information Electronics, Ewha University, Seoul, South Korea]","institution_ids":["https://openalex.org/I138925566"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5049800551","display_name":"T. Sakurai","orcid":"https://orcid.org/0000-0001-5730-1937"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Sakurai","raw_affiliation_strings":["Institute of Industrial Science, University of Tokyo, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Industrial Science, University of Tokyo, Tokyo, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":7.2103,"has_fulltext":false,"cited_by_count":58,"citation_normalized_percentile":{"value":0.97615513,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"37","issue":"3","first_page":"413","last_page":"419"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7341514825820923},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.7115035057067871},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.6809981465339661},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5171022415161133},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5140701532363892},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.5125341415405273},{"id":"https://openalex.org/keywords/drain-induced-barrier-lowering","display_name":"Drain-induced barrier lowering","score":0.4787811040878296},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.45715636014938354},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.4381789267063141},{"id":"https://openalex.org/keywords/workload","display_name":"Workload","score":0.42819744348526},{"id":"https://openalex.org/keywords/reduced-instruction-set-computing","display_name":"Reduced instruction set computing","score":0.42006051540374756},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3831137716770172},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.37162578105926514},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.34476351737976074},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3439522087574005},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3272801637649536},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3154109716415405},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.29260754585266113},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23991775512695312},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21980783343315125},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.14943602681159973}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7341514825820923},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.7115035057067871},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.6809981465339661},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5171022415161133},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5140701532363892},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.5125341415405273},{"id":"https://openalex.org/C73118932","wikidata":"https://www.wikidata.org/wiki/Q5305541","display_name":"Drain-induced barrier lowering","level":5,"score":0.4787811040878296},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.45715636014938354},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.4381789267063141},{"id":"https://openalex.org/C2778476105","wikidata":"https://www.wikidata.org/wiki/Q628539","display_name":"Workload","level":2,"score":0.42819744348526},{"id":"https://openalex.org/C126298526","wikidata":"https://www.wikidata.org/wiki/Q189376","display_name":"Reduced instruction set computing","level":3,"score":0.42006051540374756},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3831137716770172},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.37162578105926514},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.34476351737976074},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3439522087574005},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3272801637649536},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3154109716415405},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.29260754585266113},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23991775512695312},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21980783343315125},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.14943602681159973},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C202491316","wikidata":"https://www.wikidata.org/wiki/Q272683","display_name":"Instruction set","level":2,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/4.987094","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.987094","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8799999952316284}],"awards":[],"funders":[{"id":"https://openalex.org/F4320322832","display_name":"University of Tokyo","ror":"https://ror.org/057zh3y96"},{"id":"https://openalex.org/F4320325182","display_name":"Chiba University","ror":"https://ror.org/01hjzeq58"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1963680138","https://openalex.org/W1976631888","https://openalex.org/W1991727477","https://openalex.org/W2108049334","https://openalex.org/W2114621701","https://openalex.org/W2121190917","https://openalex.org/W2132114163","https://openalex.org/W2147597268","https://openalex.org/W2160395795","https://openalex.org/W2168956145","https://openalex.org/W4236165415"],"related_works":["https://openalex.org/W2048408144","https://openalex.org/W2091045929","https://openalex.org/W2062767191","https://openalex.org/W2105853365","https://openalex.org/W2009852498","https://openalex.org/W2118372864","https://openalex.org/W2149591383","https://openalex.org/W2329789414","https://openalex.org/W2083674717","https://openalex.org/W2162865626"],"abstract_inverted_index":{"In":[0,73],"order":[1,74],"to":[2,36,40,75],"suppress":[3],"the":[4,20,38,44,68,77,91,110,129],"power":[5,39,118],"consumption":[6],"in":[7,49,98],"low-voltage":[8,71],"processors,":[9],"a":[10,30,82,99],"threshold":[11,21],"voltage":[12,22,47,52],"hopping":[13],"(V/sub":[14],"TH/-hopping)":[15],"scheme":[16,61,95],"is":[17,23,34,65,96,106],"proposed":[18],"where":[19],"dynamically":[24],"controlled":[25],"through":[26],"software":[27],"depending":[28],"on":[29,109],"workload.":[31],"V/sub":[32,63,80,87,125],"TH/-hopping":[33,64,88,126],"shown":[35],"reduce":[37],"18":[41],"%":[42],"of":[43,79],"fixed":[45,130],"low-threshold":[46],"circuits":[48],"0.5-V":[50],"supply":[51],"regime":[53],"for":[54,67],"multimedia":[55],"applications.":[56],"A":[57],"positive":[58,92,131],"back-gate":[59,93,132],"bias":[60,94,133],"with":[62,86,128],"presented":[66],"high-performance":[69],"and":[70,90],"processors.":[72],"verify":[76],"effectiveness":[78],"TH/-hopping,":[81],"small-scale":[83],"RISC":[84],"processor":[85],"capability":[89],"fabricated":[97],"0.6-/spl":[100],"mu/m":[101],"CMOS":[102],"technology.":[103],"MPEG4":[104],"encoding":[105],"simulated":[107],"based":[108],"measured":[111],"data.":[112],"The":[113],"result":[114],"shows":[115],"that":[116],"86%":[117],"saving":[119],"can":[120],"be":[121],"achieved":[122],"by":[123],"using":[124],"compared":[127],"scheme.":[134]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}