{"id":"https://openalex.org/W2114519929","doi":"https://doi.org/10.1109/4.839914","title":"A 0.5-/spl mu/m, 3-V 1T1C, 1-Mbit FRAM with a variable reference bit-line voltage scheme using a fatigue-free reference capacitor","display_name":"A 0.5-/spl mu/m, 3-V 1T1C, 1-Mbit FRAM with a variable reference bit-line voltage scheme using a fatigue-free reference capacitor","publication_year":2000,"publication_date":"2000-04-01","ids":{"openalex":"https://openalex.org/W2114519929","doi":"https://doi.org/10.1109/4.839914","mag":"2114519929"},"language":"en","primary_location":{"id":"doi:10.1109/4.839914","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.839914","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051964273","display_name":"Ryu Ogiwara","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"R. Ogiwara","raw_affiliation_strings":["ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","ULSI Device Eng. Lab., Toshiba Corp., Yokohama, Japan"],"affiliations":[{"raw_affiliation_string":"ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"ULSI Device Eng. Lab., Toshiba Corp., Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064785879","display_name":"S. Tanaka","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Tanaka","raw_affiliation_strings":["ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080510694","display_name":"Y. Itoh","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Itoh","raw_affiliation_strings":["ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110466807","display_name":"Tadashi Miyakawa","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Miyakawa","raw_affiliation_strings":["ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","USLI Device Eng. Lab., Toshiba Corp., Yokohama, Japan"],"affiliations":[{"raw_affiliation_string":"ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"USLI Device Eng. Lab., Toshiba Corp., Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101432602","display_name":"Yoshinori Takeuchi","orcid":"https://orcid.org/0000-0001-6936-3596"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Takeuchi","raw_affiliation_strings":["ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031669788","display_name":"Sumiko Doumae","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S.M. Doumae","raw_affiliation_strings":["ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057492600","display_name":"Hiroshi Takenaka","orcid":"https://orcid.org/0000-0002-4702-4961"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Takenaka","raw_affiliation_strings":["Advanced LSI Technology Development Department, Toshiba Microelectronics Corporation, Yokohama, Japan","[Advanced LSI Technology Development Department, Toshiba Microelectronics Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Advanced LSI Technology Development Department, Toshiba Microelectronics Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Advanced LSI Technology Development Department, Toshiba Microelectronics Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069187351","display_name":"I. Kunishima","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"I. Kunishima","raw_affiliation_strings":["ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027173687","display_name":"S. Shuto","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Shuto","raw_affiliation_strings":["ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090799737","display_name":"O. Hidaka","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"O. Hidaka","raw_affiliation_strings":["ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045601228","display_name":"Satoshi Ohtsuki","orcid":"https://orcid.org/0000-0002-0173-7712"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Ohtsuki","raw_affiliation_strings":["Advanced LSI Technology Development Department, Toshiba Microelectronics Corporation, Yokohama, Japan","[Advanced LSI Technology Development Department, Toshiba Microelectronics Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Advanced LSI Technology Development Department, Toshiba Microelectronics Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Advanced LSI Technology Development Department, Toshiba Microelectronics Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":11,"corresponding_author_ids":["https://openalex.org/A5051964273"],"corresponding_institution_ids":["https://openalex.org/I1292669757"],"apc_list":null,"apc_paid":null,"fwci":4.9466,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.95157558,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"35","issue":"4","first_page":"545","last_page":"551"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.7015413641929626},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.6183574199676514},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.5904109477996826},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5745428204536438},{"id":"https://openalex.org/keywords/megabit","display_name":"Megabit","score":0.5311877727508545},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5059220194816589},{"id":"https://openalex.org/keywords/sense-amplifier","display_name":"Sense amplifier","score":0.49262315034866333},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4830268323421478},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.47035932540893555},{"id":"https://openalex.org/keywords/line","display_name":"Line (geometry)","score":0.45358163118362427},{"id":"https://openalex.org/keywords/generator","display_name":"Generator (circuit theory)","score":0.4257954955101013},{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.42354488372802734},{"id":"https://openalex.org/keywords/sense","display_name":"Sense (electronics)","score":0.4222184419631958},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3595646321773529},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.32010090351104736},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2625797390937805},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20334267616271973},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.14569297432899475},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.115663081407547},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.09752205014228821},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.08335661888122559}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.7015413641929626},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6183574199676514},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.5904109477996826},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5745428204536438},{"id":"https://openalex.org/C185177783","wikidata":"https://www.wikidata.org/wiki/Q3332814","display_name":"Megabit","level":2,"score":0.5311877727508545},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5059220194816589},{"id":"https://openalex.org/C32666082","wikidata":"https://www.wikidata.org/wiki/Q7450979","display_name":"Sense amplifier","level":3,"score":0.49262315034866333},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4830268323421478},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.47035932540893555},{"id":"https://openalex.org/C198352243","wikidata":"https://www.wikidata.org/wiki/Q37105","display_name":"Line (geometry)","level":2,"score":0.45358163118362427},{"id":"https://openalex.org/C2780992000","wikidata":"https://www.wikidata.org/wiki/Q17016113","display_name":"Generator (circuit theory)","level":3,"score":0.4257954955101013},{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.42354488372802734},{"id":"https://openalex.org/C143141573","wikidata":"https://www.wikidata.org/wiki/Q7450971","display_name":"Sense (electronics)","level":2,"score":0.4222184419631958},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3595646321773529},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.32010090351104736},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2625797390937805},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20334267616271973},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.14569297432899475},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.115663081407547},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.09752205014228821},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.08335661888122559},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/4.839914","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.839914","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8100000023841858}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W1501285939","https://openalex.org/W2022458399","https://openalex.org/W2169903902"],"related_works":["https://openalex.org/W1505592588","https://openalex.org/W2023126743","https://openalex.org/W4210561788","https://openalex.org/W2141891196","https://openalex.org/W2008991407","https://openalex.org/W35920351","https://openalex.org/W2205084904","https://openalex.org/W2158019526","https://openalex.org/W1559236927","https://openalex.org/W2114519929"],"abstract_inverted_index":{"A":[0,41,104,140],"0.5-/spl":[1],"mu/m,":[2],"3-V":[3],"operated,":[4],"1TIC,":[5],"1-Mbit":[6],"FRAM":[7],"with":[8],"160-ns":[9],"access":[10],"time":[11],"has":[12,109,146],"been":[13,111,147],"developed.":[14],"In":[15],"FRAM,":[16],"a":[17,22,34,38,53,61,68,87,115,124,128],"reference":[18,43,58,70,129],"voltage":[19,44,71],"design":[20],"using":[21],"ferroelectric":[23],"capacitor":[24],"is":[25,46,65,97],"difficult":[26],"because":[27],"of":[28,86],"the":[29,83,120,134,150],"degradation":[30],"due":[31],"to":[32,48,113],"fatigue,":[33],"chip-to-chip":[35],"variation,":[36],"and":[37,55,79,127],"temperature":[39],"dependence.":[40],"variable":[42],"scheme":[45,108],"generated":[47],"solve":[49],"this":[50],"problem,":[51],"boosting":[52],"fatigue-free":[54],"temperature-independent":[56],"MOS":[57],"capacitance":[59,94,101,117],"by":[60,149],"driver.":[62],"The":[63],"driver":[64],"operated":[66],"from":[67,133],"compact":[69],"generator":[72],"that":[73],"provides":[74],"32":[75],"equally":[76],"divided":[77],"voltages":[78],"occupies":[80],"only":[81],"half":[82],"layout":[84],"area":[85],"conventional":[88],"one.":[89],"During":[90],"sense":[91,138],"operation,":[92],"memory-cell":[93],"C/sub":[95,102],"ferr/":[96],"larger":[98],"than":[99],"reference-cell":[100],"MOS/.":[103],"double":[105],"word-line":[106],"pulse":[107],"also":[110],"developed":[112],"eliminate":[114],"bit-line":[116,121,135],"imbalance":[118],"in":[119,143],"pairs,":[122],"where":[123],"memory":[125],"cell":[126,130],"are":[131],"separated":[132],"pairs":[136],"during":[137],"operation.":[139],"six-order":[141],"improvement":[142],"imprint":[144],"lifetime":[145],"achieved":[148],"new":[151],"scheme.":[152]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}