{"id":"https://openalex.org/W2024678877","doi":"https://doi.org/10.1109/4.641697","title":"A 3.3-V single power supply 16-Mb nonvolatile virtual DRAM using a NAND flash memory technology","display_name":"A 3.3-V single power supply 16-Mb nonvolatile virtual DRAM using a NAND flash memory technology","publication_year":1997,"publication_date":"1997-01-01","ids":{"openalex":"https://openalex.org/W2024678877","doi":"https://doi.org/10.1109/4.641697","mag":"2024678877"},"language":"en","primary_location":{"id":"doi:10.1109/4.641697","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.641697","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103179201","display_name":"Tae\u2010Sung Jung","orcid":"https://orcid.org/0000-0001-9226-3198"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Tae-Sung Jung","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055982161","display_name":"Do-Chan Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Do-Chan Choi","raw_affiliation_strings":["Samsung Electronics, Inc., San Jose, CA, USA"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067957864","display_name":"Sung\u2010Hee Cho","orcid":"https://orcid.org/0000-0002-9605-5086"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung-Hee Cho","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027075813","display_name":"Myong-Jae Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Myong-Jae Kim","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036255262","display_name":"Seung-Keun Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seung-Keun Lee","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112140940","display_name":"Byung\u2010Soon Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byung-Soon Choi","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038528433","display_name":"Jin-Sun Yum","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jin-Sun Yum","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081817442","display_name":"San-Hong Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"San-Hong Kim","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100600860","display_name":"Dong\u2010Gi Lee","orcid":"https://orcid.org/0000-0002-7885-7894"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong-Gi Lee","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076004618","display_name":"Jong-Chang Son","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jong-Chang Son","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052161396","display_name":"Myung-Sik Yong","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Myung-Sik Yong","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051186584","display_name":"Heung-Kwun Oh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Heung-Kwun Oh","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077880083","display_name":"Sung-Bu Jun","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung-Bu Jun","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024384667","display_name":"Woung-Moo Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Woung-Moo Lee","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049383811","display_name":"Ejaz Ul Haq","orcid":"https://orcid.org/0000-0002-0099-0708"},"institutions":[{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E. Haq","raw_affiliation_strings":["Samsung Electronics, Inc., San Jose, CA, USA"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109991730","display_name":"Kang-Deog Suh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kang-Deog Suh","raw_affiliation_strings":["DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"DRAM Design, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108207658","display_name":"S.B. Ali","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S.B. Ali","raw_affiliation_strings":["CPU Marketing, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea"],"affiliations":[{"raw_affiliation_string":"CPU Marketing, Samsung Electronics Company Limited, Yongin si, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5015927139","display_name":"Hyung\u2010Kyu Lim","orcid":"https://orcid.org/0000-0002-2403-2766"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hyung-Kyu Lim","raw_affiliation_strings":[],"affiliations":[]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":18,"corresponding_author_ids":["https://openalex.org/A5103179201"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.4868,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.72123438,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":"32","issue":"11","first_page":"1748","last_page":"1757"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10054","display_name":"Parallel Computing and Optimization Techniques","score":0.9961000084877014,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.6916913986206055},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.655298113822937},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.6153458952903748},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.5764034390449524},{"id":"https://openalex.org/keywords/access-time","display_name":"Access time","score":0.4980025291442871},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.48196670413017273},{"id":"https://openalex.org/keywords/dynamic-random-access-memory","display_name":"Dynamic random-access memory","score":0.44238266348838806},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4121329188346863},{"id":"https://openalex.org/keywords/memory-architecture","display_name":"Memory architecture","score":0.4105954170227051},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.38109269738197327},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.287985622882843},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2761823832988739},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.2410041093826294},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1546776294708252},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11404263973236084}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.6916913986206055},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.655298113822937},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.6153458952903748},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.5764034390449524},{"id":"https://openalex.org/C194080101","wikidata":"https://www.wikidata.org/wiki/Q46306","display_name":"Access time","level":2,"score":0.4980025291442871},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.48196670413017273},{"id":"https://openalex.org/C118702147","wikidata":"https://www.wikidata.org/wiki/Q189396","display_name":"Dynamic random-access memory","level":3,"score":0.44238266348838806},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4121329188346863},{"id":"https://openalex.org/C2779602883","wikidata":"https://www.wikidata.org/wiki/Q15544750","display_name":"Memory architecture","level":2,"score":0.4105954170227051},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.38109269738197327},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.287985622882843},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2761823832988739},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.2410041093826294},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1546776294708252},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11404263973236084},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/4.641697","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.641697","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8199999928474426,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1561731170","https://openalex.org/W1562898213","https://openalex.org/W1568080074","https://openalex.org/W2065122026","https://openalex.org/W2134519788","https://openalex.org/W2135210684","https://openalex.org/W6679604295"],"related_works":["https://openalex.org/W1888298746","https://openalex.org/W2000282823","https://openalex.org/W3011606802","https://openalex.org/W2146787620","https://openalex.org/W2110413720","https://openalex.org/W2068579290","https://openalex.org/W2066733867","https://openalex.org/W2162910241","https://openalex.org/W2114165242","https://openalex.org/W2024678877"],"abstract_inverted_index":{"A":[0,152],"3.3-V":[1],"16-Mb":[2],"nonvolatile":[3,98],"memory":[4,46],"having":[5],"operation":[6,100],"virtually":[7],"identical":[8],"to":[9,116,129],"DRAM":[10,24],"with":[11,42,75,101],"package":[12],"pin":[13],"compatibility":[14],"has":[15],"been":[16],"developed.":[17,105],"Read":[18],"and":[19,57,69,88,111,148,160],"write":[20],"operations":[21],"are":[22],"fully":[23],"compatible":[25],"except":[26],"for":[27],"a":[28,52,58,76,125,130,139],"longer":[29],"RAS":[30],"precharge":[31],"time":[32,38,80],"after":[33],"write.":[34],"Fast":[35,72],"random":[36],"access":[37,79],"of":[39,81,168],"63":[40],"ns":[41,83],"the":[43,117,161,166],"NAND":[44],"flash":[45],"cell":[47,113,163],"is":[48,84,104,108,121,136,156,172],"achieved":[49,85],"by":[50,86,123],"using":[51,146],"hierarchical":[53],"row":[54],"decoder":[55],"scheme":[56,128],"unique":[59],"folded":[60],"bit-line":[61,127],"architecture":[62],"which":[63],"also":[64],"allows":[65],"bit-by-bit":[66],"program":[67],"verify":[68],"inhibit":[70],"operation.":[71],"page":[73],"mode":[74],"column":[77],"address":[78],"21":[82],"sensing":[87],"latching":[89],"4":[90],"k":[91],"cells":[92],"simultaneously.":[93],"To":[94],"allow":[95],"byte":[96],"alterability,":[97],"restore":[99],"self-contained":[102],"erase":[103,107,120],"Self-contained":[106],"word-line":[109,118],"based,":[110],"increased":[112],"disturb":[114],"due":[115],"based":[119],"relaxed":[122],"adding":[124],"boosted":[126],"conventional":[131],"self-boosting":[132],"technique.":[133],"The":[134],"device":[135],"fabricated":[137],"in":[138],"0.5-/spl":[140],"mu/m":[141],"triple-well,":[142],"p-substrate":[143],"CMOS":[144],"process":[145],"two-metal":[147],"three-poly":[149],"interconnect":[150],"layers.":[151],"resulting":[153],"die":[154],"size":[155,164],"86.6":[157],"mm/sup":[158],"2/,":[159],"effective":[162],"including":[165],"overhead":[167],"string":[169],"select":[170],"transistors":[171],"2.0":[173],"/spl":[174],"mu/m/sup":[175],"2/.":[176]},"counts_by_year":[{"year":2015,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}