{"id":"https://openalex.org/W2157891744","doi":"https://doi.org/10.1109/4.284709","title":"Low-voltage, low-power BiCMOS digital circuits","display_name":"Low-voltage, low-power BiCMOS digital circuits","publication_year":1994,"publication_date":"1994-05-01","ids":{"openalex":"https://openalex.org/W2157891744","doi":"https://doi.org/10.1109/4.284709","mag":"2157891744"},"language":"en","primary_location":{"id":"doi:10.1109/4.284709","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.284709","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055141841","display_name":"S.S. Rofail","orcid":null},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":true,"raw_author_name":"S.S. Rofail","raw_affiliation_strings":["Microelectronics Center of School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Center of School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5055141841"],"corresponding_institution_ids":["https://openalex.org/I172675005"],"apc_list":null,"apc_paid":null,"fwci":4.1716,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.94186228,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"29","issue":"5","first_page":"572","last_page":"579"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.8087253570556641},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6697883009910583},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6188461184501648},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5170524716377258},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5133835077285767},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4559735059738159},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.44288355112075806},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.43745923042297363},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42498287558555603},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4120643138885498},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2900860905647278},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1142214834690094}],"concepts":[{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.8087253570556641},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6697883009910583},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6188461184501648},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5170524716377258},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5133835077285767},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4559735059738159},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.44288355112075806},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.43745923042297363},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42498287558555603},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4120643138885498},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2900860905647278},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1142214834690094},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/4.284709","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.284709","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.75}],"awards":[],"funders":[{"id":"https://openalex.org/F4320322670","display_name":"Tehran University of Medical Sciences and Health Services","ror":"https://ror.org/01c4pz451"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1517992858","https://openalex.org/W1792328316","https://openalex.org/W2002234975","https://openalex.org/W2035545925","https://openalex.org/W2044062025","https://openalex.org/W2049186916","https://openalex.org/W2065369966","https://openalex.org/W2116893473","https://openalex.org/W2125458239","https://openalex.org/W2127490315","https://openalex.org/W2137966577","https://openalex.org/W2143017394","https://openalex.org/W2151276975","https://openalex.org/W2166529908","https://openalex.org/W2168088824","https://openalex.org/W2534489110","https://openalex.org/W2548883282"],"related_works":["https://openalex.org/W2134296189","https://openalex.org/W2136081556","https://openalex.org/W2168341847","https://openalex.org/W2463150728","https://openalex.org/W2108167458","https://openalex.org/W2012536985","https://openalex.org/W2155160465","https://openalex.org/W2389800961","https://openalex.org/W2119551906","https://openalex.org/W1995389502"],"abstract_inverted_index":{"A":[0],"new":[1],"BiCMOS":[2,53],"buffer":[3],"circuit,":[4],"for":[5],"low-voltage,":[6],"low-power":[7],"environment,":[8],"is":[9,13],"presented.":[10],"The":[11,31],"circuit":[12,42],"based":[14],"on":[15],"the":[16,22,28,38,41],"deep":[17],"submicron":[18],"technology":[19],"and":[20,34,43,46],"utilizes":[21],"parasitic":[23],"bipolar":[24],"transistors":[25],"associated":[26],"with":[27,51],"CMOS":[29],"structure.":[30],"analysis,":[32],"simulations":[33],"SPICE":[35],"results":[36],"confirm":[37],"functionality":[39],"of":[40],"its":[44],"speed":[45],"voltage":[47],"swing":[48],"superiority,":[49],"compared":[50],"conventional":[52],"circuits":[54],"at":[55],"low":[56],"supply":[57],"voltages.<":[58],"<ETX":[59],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[60],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">&gt;</ETX>":[61]},"counts_by_year":[{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}