{"id":"https://openalex.org/W2903172905","doi":"https://doi.org/10.1109/wocn.2018.8556128","title":"Quantum Well Laser Diodes with slightly-doped tunnel junction","display_name":"Quantum Well Laser Diodes with slightly-doped tunnel junction","publication_year":2018,"publication_date":"2018-02-01","ids":{"openalex":"https://openalex.org/W2903172905","doi":"https://doi.org/10.1109/wocn.2018.8556128","mag":"2903172905"},"language":"en","primary_location":{"id":"doi:10.1109/wocn.2018.8556128","is_oa":false,"landing_page_url":"https://doi.org/10.1109/wocn.2018.8556128","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 Fifteenth International Conference on Wireless and Optical Communications Networks (WOCN)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":null,"any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006603598","display_name":"Huolei Wang","orcid":"https://orcid.org/0000-0001-6245-8090"},"institutions":[{"id":"https://openalex.org/I122411786","display_name":"California Institute of Technology","ror":"https://ror.org/05dxps055","country_code":"US","type":"education","lineage":["https://openalex.org/I122411786"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Huolei Wang","raw_affiliation_strings":["Department of Applied Physics and Materials Science, California Institute of Technology Pasadena, California, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Applied Physics and Materials Science, California Institute of Technology Pasadena, California, USA","institution_ids":["https://openalex.org/I122411786"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100700728","display_name":"Yajie Li","orcid":"https://orcid.org/0000-0002-3790-4201"},"institutions":[{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yajie Li","raw_affiliation_strings":["Institute of Semiconductors Chinese Academy of Science, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Semiconductors Chinese Academy of Science, Beijing, China","institution_ids":["https://openalex.org/I4210149211"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101497950","display_name":"Hongyan Yu","orcid":"https://orcid.org/0000-0002-3098-7104"},"institutions":[{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongyan Yu","raw_affiliation_strings":["Institute of Semiconductors Chinese Academy of Science, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Semiconductors Chinese Academy of Science, Beijing, China","institution_ids":["https://openalex.org/I4210149211"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101876901","display_name":"Xuliang Zhou","orcid":"https://orcid.org/0000-0002-3738-5579"},"institutions":[{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xuliang Zhou","raw_affiliation_strings":["Institute of Semiconductors Chinese Academy of Science, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Semiconductors Chinese Academy of Science, Beijing, China","institution_ids":["https://openalex.org/I4210149211"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010313033","display_name":"Weixi Chen","orcid":"https://orcid.org/0000-0003-1956-3025"},"institutions":[{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weixi Chen","raw_affiliation_strings":["Institute of Semiconductors Chinese Academy of Science, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Semiconductors Chinese Academy of Science, Beijing, China","institution_ids":["https://openalex.org/I4210149211"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042225705","display_name":"Jiaoqing Pan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiaoqing Pan","raw_affiliation_strings":["Institute of Semiconductors Chinese Academy of Science, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Semiconductors Chinese Academy of Science, Beijing, China","institution_ids":["https://openalex.org/I4210149211"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101031041","display_name":"Ying Ding","orcid":"https://orcid.org/0009-0006-9044-8934"},"institutions":[{"id":"https://openalex.org/I7882870","display_name":"University of Glasgow","ror":"https://ror.org/00vtgdb53","country_code":"GB","type":"education","lineage":["https://openalex.org/I7882870"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Ying Ding","raw_affiliation_strings":["School of Engineering, University of Glasgow, Glasgow, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Engineering, University of Glasgow, Glasgow, UK","institution_ids":["https://openalex.org/I7882870"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.13140243,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.7566876411437988},{"id":"https://openalex.org/keywords/lasing-threshold","display_name":"Lasing threshold","score":0.7344944477081299},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7343292236328125},{"id":"https://openalex.org/keywords/laser","display_name":"Laser","score":0.637057900428772},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.6250680685043335},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.622749924659729},{"id":"https://openalex.org/keywords/tunnel-junction","display_name":"Tunnel junction","score":0.6150467395782471},{"id":"https://openalex.org/keywords/quantum-efficiency","display_name":"Quantum efficiency","score":0.5202504396438599},{"id":"https://openalex.org/keywords/quantum-well","display_name":"Quantum well","score":0.47250664234161377},{"id":"https://openalex.org/keywords/quantum-well-laser","display_name":"Quantum well laser","score":0.4563255310058594},{"id":"https://openalex.org/keywords/semiconductor-laser-theory","display_name":"Semiconductor laser theory","score":0.44211000204086304},{"id":"https://openalex.org/keywords/tunnel-diode","display_name":"Tunnel diode","score":0.42219775915145874},{"id":"https://openalex.org/keywords/quantum-dot-laser","display_name":"Quantum dot laser","score":0.39450687170028687},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.2664911150932312},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.23681840300559998},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.227605938911438}],"concepts":[{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.7566876411437988},{"id":"https://openalex.org/C40637687","wikidata":"https://www.wikidata.org/wiki/Q676237","display_name":"Lasing threshold","level":3,"score":0.7344944477081299},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7343292236328125},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.637057900428772},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.6250680685043335},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.622749924659729},{"id":"https://openalex.org/C83408046","wikidata":"https://www.wikidata.org/wiki/Q3183536","display_name":"Tunnel junction","level":3,"score":0.6150467395782471},{"id":"https://openalex.org/C205507967","wikidata":"https://www.wikidata.org/wiki/Q900625","display_name":"Quantum efficiency","level":2,"score":0.5202504396438599},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.47250664234161377},{"id":"https://openalex.org/C2776798635","wikidata":"https://www.wikidata.org/wiki/Q7269114","display_name":"Quantum well laser","level":5,"score":0.4563255310058594},{"id":"https://openalex.org/C121477167","wikidata":"https://www.wikidata.org/wiki/Q17154002","display_name":"Semiconductor laser theory","level":3,"score":0.44211000204086304},{"id":"https://openalex.org/C4464978","wikidata":"https://www.wikidata.org/wiki/Q176235","display_name":"Tunnel diode","level":3,"score":0.42219775915145874},{"id":"https://openalex.org/C74130334","wikidata":"https://www.wikidata.org/wiki/Q4252980","display_name":"Quantum dot laser","level":4,"score":0.39450687170028687},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.2664911150932312},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.23681840300559998},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.227605938911438},{"id":"https://openalex.org/C6260449","wikidata":"https://www.wikidata.org/wiki/Q41364","display_name":"Wavelength","level":2,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/wocn.2018.8556128","is_oa":false,"landing_page_url":"https://doi.org/10.1109/wocn.2018.8556128","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 Fifteenth International Conference on Wireless and Optical Communications Networks (WOCN)","raw_type":"proceedings-article"},{"id":"pmh:oai:eprints.gla.ac.uk:179099","is_oa":true,"landing_page_url":null,"pdf_url":null,"source":{"id":"https://openalex.org/S4210235606","display_name":"ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)","issn_l":"2622-8912","issn":["2622-8912","2622-8920"],"is_oa":true,"is_in_doaj":true,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":"","raw_type":"Conference Proceedings"},{"id":"pmh:oai:authors.library.caltech.edu:92563","is_oa":false,"landing_page_url":"https://resolver.caltech.edu/CaltechAUTHORS:20190201-111654066","pdf_url":null,"source":{"id":"https://openalex.org/S4306402161","display_name":"CaltechAUTHORS (California Institute of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I122411786","host_organization_name":"California Institute of Technology","host_organization_lineage":["https://openalex.org/I122411786"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Book Section"}],"best_oa_location":{"id":"pmh:oai:eprints.gla.ac.uk:179099","is_oa":true,"landing_page_url":null,"pdf_url":null,"source":{"id":"https://openalex.org/S4210235606","display_name":"ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)","issn_l":"2622-8912","issn":["2622-8912","2622-8920"],"is_oa":true,"is_in_doaj":true,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":"","raw_type":"Conference Proceedings"},"sustainable_development_goals":[{"score":0.800000011920929,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W610349508","https://openalex.org/W1547342805","https://openalex.org/W1968666095","https://openalex.org/W1989551998","https://openalex.org/W2003845683","https://openalex.org/W2029173278","https://openalex.org/W2077905584","https://openalex.org/W2079296681","https://openalex.org/W2138014997","https://openalex.org/W2145005135","https://openalex.org/W2169239350","https://openalex.org/W2565072060","https://openalex.org/W2584141134","https://openalex.org/W2596398474","https://openalex.org/W3148387313"],"related_works":["https://openalex.org/W2789158226","https://openalex.org/W1984820156","https://openalex.org/W2170954412","https://openalex.org/W2063178816","https://openalex.org/W2124838770","https://openalex.org/W2090923465","https://openalex.org/W2165203425","https://openalex.org/W4241839879","https://openalex.org/W2147082094","https://openalex.org/W2768885763"],"abstract_inverted_index":{"We":[0],"experimentally":[1],"investigate":[2],"the":[3,15,29,37,42,59,68,75,83,102],"electrical":[4],"and":[5,14,58,92],"optical":[6],"characteristics":[7],"of":[8,56,104],"conventional":[9],"quantum":[10,16,44,54],"well":[11,17,45],"laser":[12,18,38],"diodes":[13,19,39],"with":[20],"slightly-doped":[21,30,84],"tunnel":[22,31,85],"junction":[23,32,86],"N++GaAs/undoped-GaAs.":[24],"The":[25,48,96],"results":[26,97],"show":[27,88],"that":[28],"give":[33],"significant":[34],"role":[35],"on":[36],"performances":[40],"in":[41],"InGaAs/GaAs":[43],"material":[46],"system.":[47],"TJ":[49],"LD":[50],"has":[51],"a":[52],"internal":[53],"efficiency":[55],"21%":[57],"loss":[60],"is":[61,71],"6.9":[62],"em":[63],"<sup":[64],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[65],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">-1</sup>":[66],",":[67],"current":[69],"threshold":[70],"35":[72],"mA,":[73],"both":[74],"lasers":[76],"are":[77],"operating":[78],"at":[79],"1.06":[80],"\u03bcm,":[81],"but":[82],"diode":[87],"nonlinear":[89],"S-shaped":[90],"current-voltage":[91],"broadband":[93],"lasing":[94],"characteristics.":[95],"may":[98],"also":[99],"lead":[100],"to":[101],"realization":[103],"more":[105],"applications.":[106]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}