{"id":"https://openalex.org/W1990983336","doi":"https://doi.org/10.1109/vts.2013.6548918","title":"New topic session 7B: Challenges and directions for ultra-low voltage VLSI circuits and systems: CMOS and beyond","display_name":"New topic session 7B: Challenges and directions for ultra-low voltage VLSI circuits and systems: CMOS and beyond","publication_year":2013,"publication_date":"2013-04-01","ids":{"openalex":"https://openalex.org/W1990983336","doi":"https://doi.org/10.1109/vts.2013.6548918","mag":"1990983336"},"language":"en","primary_location":{"id":"doi:10.1109/vts.2013.6548918","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vts.2013.6548918","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE 31st VLSI Test Symposium (VTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055257104","display_name":"Bo\u017cena Kami\u0144ska","orcid":"https://orcid.org/0000-0002-2642-4616"},"institutions":[{"id":"https://openalex.org/I181950316","display_name":"Saint Francis University","ror":"https://ror.org/04smsfy22","country_code":"US","type":"education","lineage":["https://openalex.org/I181950316"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Bozena Kaminska","raw_affiliation_strings":["SFU"],"affiliations":[{"raw_affiliation_string":"SFU","institution_ids":["https://openalex.org/I181950316"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103569354","display_name":"Bernard Courtois","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Bernard Courtois","raw_affiliation_strings":["CMP","CMP#TAB#"],"affiliations":[{"raw_affiliation_string":"CMP","institution_ids":[]},{"raw_affiliation_string":"CMP#TAB#","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5052037141","display_name":"Massimo Alioto","orcid":"https://orcid.org/0000-0002-4127-8258"},"institutions":[{"id":"https://openalex.org/I102064193","display_name":"University of Siena","ror":"https://ror.org/01tevnk56","country_code":"IT","type":"education","lineage":["https://openalex.org/I102064193"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Massimo Alioto","raw_affiliation_strings":["University of Siena","University of Siena ()"],"affiliations":[{"raw_affiliation_string":"University of Siena","institution_ids":["https://openalex.org/I102064193"]},{"raw_affiliation_string":"University of Siena ()","institution_ids":["https://openalex.org/I102064193"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5055257104"],"corresponding_institution_ids":["https://openalex.org/I181950316"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.06425937,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9919999837875366,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7034903764724731},{"id":"https://openalex.org/keywords/very-large-scale-integration","display_name":"Very-large-scale integration","score":0.6584110260009766},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6276269555091858},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.6053013205528259},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.5401932001113892},{"id":"https://openalex.org/keywords/efficient-energy-use","display_name":"Efficient energy use","score":0.5101078152656555},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4907132387161255},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3535288870334625},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.2757267951965332},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24273642897605896}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7034903764724731},{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.6584110260009766},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6276269555091858},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6053013205528259},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.5401932001113892},{"id":"https://openalex.org/C2742236","wikidata":"https://www.wikidata.org/wiki/Q924713","display_name":"Efficient energy use","level":2,"score":0.5101078152656555},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4907132387161255},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3535288870334625},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.2757267951965332},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24273642897605896},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vts.2013.6548918","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vts.2013.6548918","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE 31st VLSI Test Symposium (VTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W3014521742","https://openalex.org/W4283025278","https://openalex.org/W2082432309","https://openalex.org/W2617868873","https://openalex.org/W817174743","https://openalex.org/W2050492524","https://openalex.org/W3204141294","https://openalex.org/W2998315020","https://openalex.org/W2389800961","https://openalex.org/W1995389502"],"abstract_inverted_index":{"In":[0],"this":[1],"talk,":[2],"a":[3,65,142],"unitary":[4],"perspective":[5],"is":[6,73,94,125,139],"given":[7,74],"on":[8,24,53,75],"the":[9,35,54,69,95,99,131],"design":[10,153],"challenges":[11],"involved":[12],"in":[13,141],"ultra-low":[14],"voltage":[15,115],"(ULV)":[16],"VLSI":[17,90],"circuits":[18],"and":[19,45,88,117,148],"systems,":[20,40],"as":[21,23,84,107],"well":[22],"directions":[25],"to":[26,33,58,63,127,130],"tackle":[27],"them.":[28],"Innovative":[29],"approaches":[30],"are":[31,61,105],"described":[32],"improve":[34],"energy":[36,81,118],"efficiency":[37],"of":[38,56,68,133,137],"ULV":[39],"while":[41],"maintaining":[42],"adequate":[43],"resiliency":[44],"yield":[46],"with":[47],"low":[48],"overhead.":[49],"Experimental":[50],"results":[51],"based":[52],"testing":[55],"65-nm":[57],"28-nm":[59],"prototypes":[60],"presented":[62],"develop":[64],"quantitative":[66],"sense":[67],"achievable":[70],"benefits.":[71],"Emphasis":[72],"applications":[76],"that":[77,111],"require":[78],"extremely":[79],"high":[80],"efficiency,":[82],"such":[83,134],"compact":[85],"portable":[86],"devices":[87],"energy-autonomous":[89],"systems.":[91],"Although":[92,120],"CMOS":[93],"mainstream":[96],"choice":[97],"for":[98],"foreseeable":[100],"future,":[101],"Tunnel":[102],"FETs":[103],"(TFETs)":[104],"introduced":[106],"very":[108],"promising":[109],"alternative":[110],"favors":[112],"more":[113],"aggressive":[114],"scaling":[116],"reduction.":[119],"still":[121],"immature,":[122],"device-circuit":[123],"co-design":[124],"shown":[126],"be":[128,155],"critical":[129],"success":[132],"technology.":[135],"Potential":[136],"TFETs":[138],"discussed":[140],"general":[143],"framework":[144],"through":[145],"representative":[146],"metrics":[147],"vehicle":[149],"circuits,":[150],"emphasizing":[151],"how":[152],"will":[154],"impacted":[156],"by":[157],"their":[158],"adoption.":[159]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}