{"id":"https://openalex.org/W2152770400","doi":"https://doi.org/10.1109/vts.2012.6231077","title":"Self-adaptive power gating with test circuit for on-line characterization of energy inflection activity","display_name":"Self-adaptive power gating with test circuit for on-line characterization of energy inflection activity","publication_year":2012,"publication_date":"2012-04-01","ids":{"openalex":"https://openalex.org/W2152770400","doi":"https://doi.org/10.1109/vts.2012.6231077","mag":"2152770400"},"language":"en","primary_location":{"id":"doi:10.1109/vts.2012.6231077","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vts.2012.6231077","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE 30th VLSI Test Symposium (VTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5028132107","display_name":"Amit Ranjan Trivedi","orcid":"https://orcid.org/0000-0001-5436-7922"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Amit Ranjan Trivedi","raw_affiliation_strings":["Department of ECE, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"Department of ECE, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009591041","display_name":"Saibal Mukhopadhyay","orcid":"https://orcid.org/0000-0002-8894-3390"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Saibal Mukhopadhyay","raw_affiliation_strings":["Department of ECE, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"Department of ECE, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5028132107"],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":0.491,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.70658097,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"38","last_page":"43"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/power-gating","display_name":"Power gating","score":0.835599422454834},{"id":"https://openalex.org/keywords/gating","display_name":"Gating","score":0.5879788994789124},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5315762758255005},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5189935564994812},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.5023245811462402},{"id":"https://openalex.org/keywords/energy","display_name":"Energy (signal processing)","score":0.4990243911743164},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4912216067314148},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.4872530996799469},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4820921719074249},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4676135778427124},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3823184370994568},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.33908605575561523},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.26741039752960205},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08845952153205872}],"concepts":[{"id":"https://openalex.org/C2780700455","wikidata":"https://www.wikidata.org/wiki/Q7236515","display_name":"Power gating","level":4,"score":0.835599422454834},{"id":"https://openalex.org/C194544171","wikidata":"https://www.wikidata.org/wiki/Q21105679","display_name":"Gating","level":2,"score":0.5879788994789124},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5315762758255005},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5189935564994812},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.5023245811462402},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.4990243911743164},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4912216067314148},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.4872530996799469},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4820921719074249},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4676135778427124},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3823184370994568},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33908605575561523},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26741039752960205},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08845952153205872},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C42407357","wikidata":"https://www.wikidata.org/wiki/Q521","display_name":"Physiology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vts.2012.6231077","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vts.2012.6231077","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE 30th VLSI Test Symposium (VTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8999999761581421,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1978154694","https://openalex.org/W2103126659","https://openalex.org/W2105504170","https://openalex.org/W2119060381","https://openalex.org/W2126872604","https://openalex.org/W2131862714","https://openalex.org/W2138099459","https://openalex.org/W2143954265","https://openalex.org/W2145071646","https://openalex.org/W2158899676","https://openalex.org/W2159361123","https://openalex.org/W2163064833","https://openalex.org/W4229855890","https://openalex.org/W4243447470","https://openalex.org/W6677925612","https://openalex.org/W6680358862","https://openalex.org/W6681418934","https://openalex.org/W6683534895"],"related_works":["https://openalex.org/W2138099459","https://openalex.org/W2031449089","https://openalex.org/W2112596406","https://openalex.org/W2125499229","https://openalex.org/W4385304246","https://openalex.org/W4387096269","https://openalex.org/W2259094912","https://openalex.org/W3092470009","https://openalex.org/W3126087940","https://openalex.org/W2371329481"],"abstract_inverted_index":{"A":[0],"test":[1,35],"circuit":[2,36],"is":[3,22,37],"presented":[4],"for":[5,43],"post-silicon":[6],"and":[7,30],"on-line":[8],"characterization":[9],"of":[10,14],"the":[11],"energy-inflection":[12],"activity":[13,18],"power-gated":[15],"circuits":[16],"(the":[17],"when":[19],"overhead":[20],"energy":[21],"equal":[23],"to":[24,39],"leakage":[25],"savings)":[26],"under":[27],"static":[28],"(process)":[29],"dynamic":[31],"(voltage/temperature/input)":[32],"variations.":[33],"The":[34],"applied":[38],"design":[40],"self-adaptive":[41],"power-gating":[42],"energy-efficient":[44],"SRAM.":[45]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2014,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}