{"id":"https://openalex.org/W3170022141","doi":"https://doi.org/10.1109/vtc2021-spring51267.2021.9449089","title":"Modeling and Performance Comparison of GaN HEMT and SiC MOSFET for Onboard Charging Application","display_name":"Modeling and Performance Comparison of GaN HEMT and SiC MOSFET for Onboard Charging Application","publication_year":2021,"publication_date":"2021-04-01","ids":{"openalex":"https://openalex.org/W3170022141","doi":"https://doi.org/10.1109/vtc2021-spring51267.2021.9449089","mag":"3170022141"},"language":"en","primary_location":{"id":"doi:10.1109/vtc2021-spring51267.2021.9449089","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vtc2021-spring51267.2021.9449089","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE 93rd Vehicular Technology Conference (VTC2021-Spring)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077350602","display_name":"Webster Adepoju","orcid":"https://orcid.org/0000-0001-7057-2504"},"institutions":[{"id":"https://openalex.org/I63920570","display_name":"Tennessee Technological University","ror":"https://ror.org/05drmrq39","country_code":"US","type":"education","lineage":["https://openalex.org/I63920570"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Webster Adepoju","raw_affiliation_strings":["Dept. of Electrical and Computer Engineering, Tennessee Technological University, CookeVille, Tennessee, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electrical and Computer Engineering, Tennessee Technological University, CookeVille, Tennessee, USA","institution_ids":["https://openalex.org/I63920570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042883881","display_name":"Indranil Bhattacharya","orcid":"https://orcid.org/0000-0002-3839-3044"},"institutions":[{"id":"https://openalex.org/I63920570","display_name":"Tennessee Technological University","ror":"https://ror.org/05drmrq39","country_code":"US","type":"education","lineage":["https://openalex.org/I63920570"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Indranil Bhattacharya","raw_affiliation_strings":["Dept. of Electrical and Computer Engineering, Tennessee Technological University, CookeVille, Tennessee, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electrical and Computer Engineering, Tennessee Technological University, CookeVille, Tennessee, USA","institution_ids":["https://openalex.org/I63920570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088135274","display_name":"Muhammad Enagi Bima","orcid":"https://orcid.org/0000-0003-3165-4552"},"institutions":[{"id":"https://openalex.org/I63920570","display_name":"Tennessee Technological University","ror":"https://ror.org/05drmrq39","country_code":"US","type":"education","lineage":["https://openalex.org/I63920570"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Muhammad E. Bima","raw_affiliation_strings":["Dept. of Electrical and Computer Engineering, Tennessee Technological University, CookeVille, Tennessee, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electrical and Computer Engineering, Tennessee Technological University, CookeVille, Tennessee, USA","institution_ids":["https://openalex.org/I63920570"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5046825881","display_name":"Trapa Banik","orcid":"https://orcid.org/0000-0003-0921-3910"},"institutions":[{"id":"https://openalex.org/I63920570","display_name":"Tennessee Technological University","ror":"https://ror.org/05drmrq39","country_code":"US","type":"education","lineage":["https://openalex.org/I63920570"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Trapa Banik","raw_affiliation_strings":["Dept. of Electrical and Computer Engineering, Tennessee Technological University, CookeVille, Tennessee, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electrical and Computer Engineering, Tennessee Technological University, CookeVille, Tennessee, USA","institution_ids":["https://openalex.org/I63920570"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.3051,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.5585653,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10663","display_name":"Advanced Battery Technologies Research","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2203","display_name":"Automotive Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8007670044898987},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.7474757432937622},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.7381249070167542},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6885614991188049},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6714611053466797},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6224963068962097},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5731036067008972},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.53301602602005},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.47060853242874146},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3289574980735779},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19675850868225098},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.12960785627365112}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8007670044898987},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.7474757432937622},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.7381249070167542},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6885614991188049},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6714611053466797},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6224963068962097},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5731036067008972},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.53301602602005},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.47060853242874146},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3289574980735779},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19675850868225098},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12960785627365112},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vtc2021-spring51267.2021.9449089","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vtc2021-spring51267.2021.9449089","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE 93rd Vehicular Technology Conference (VTC2021-Spring)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.800000011920929}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W2002991263","https://openalex.org/W2029699094","https://openalex.org/W2120578094","https://openalex.org/W2123004689","https://openalex.org/W2208078502","https://openalex.org/W2304792220","https://openalex.org/W2400185157","https://openalex.org/W2596030660","https://openalex.org/W2784216752","https://openalex.org/W2806077417","https://openalex.org/W2863325548","https://openalex.org/W2898108786","https://openalex.org/W2899484555","https://openalex.org/W2901302324","https://openalex.org/W2913256734","https://openalex.org/W2947025743","https://openalex.org/W4285786398"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W1975307200","https://openalex.org/W4377089489","https://openalex.org/W1541648135","https://openalex.org/W3088454288","https://openalex.org/W4313611767","https://openalex.org/W2613044742","https://openalex.org/W2466508933"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,46],"comprehensive":[4],"performance":[5,109,132],"comparison":[6],"of":[7,21,52,63,77],"Wide":[8],"Band":[9],"Gap":[10],"(WBG)":[11],"devices":[12],"based":[13],"on":[14],"improved":[15],"DC":[16],"and":[17,30,72,80,90,128,147,168],"RF":[18],"numerical":[19],"models":[20,113],"Gallium":[22],"Nitride":[23],"High":[24],"Electron":[25],"Mobility":[26],"Transistor":[27,37],"(GaN":[28],"HEMT)":[29],"Silicon":[31],"Carbide":[32],"Metal":[33],"Oxide":[34],"Field":[35],"Effect":[36],"(SiC":[38],"MOSFET)":[39],"using":[40],"On-board":[41],"Fast":[42],"Charger":[43],"(OBC)":[44],"as":[45,95],"case":[47],"study.":[48],"The":[49,152],"battery":[50],"capacity":[51],"modern":[53],"Electric":[54],"Vehicles":[55],"(EV)":[56],"has":[57],"risen":[58],"above":[59,79],"the":[60,78,112],"charging":[61,73,177],"capability":[62],"Silicon(Si)-based":[64],"OBC":[65,135],"due":[66],"to":[67,165],"its":[68],"limited":[69],"power":[70,100,105,176],"density":[71,101],"efficiency.":[74],"In":[75],"light":[76],"advances":[81],"made":[82],"in":[83,115,141,174],"WBG":[84],"device":[85],"fabrication":[86],"technology,":[87],"SiC":[88,166],"MOSFET":[89],"GaN":[91],"HEMT":[92],"have":[93,107],"emerged":[94],"proven":[96],"candidates":[97],"for":[98,134,172],"high":[99],"OBCs.":[102],"Eventhough":[103],"both":[104],"semiconductors":[106],"better":[108],"than":[110],"Si,":[111],"presented":[114],"this":[116],"manuscript":[117],"details":[118],"their":[119,124],"operational":[120,162],"differences":[121],"coupled":[122],"with":[123],"Radio":[125],"Frequency":[126],"(RF)":[127],"Direct":[129],"Current":[130],"(DC)":[131],"limitations":[133],"applications.":[136,178],"Numerical":[137],"simulations":[138],"were":[139,145],"performed":[140],"Matlab.":[142],"Simulation":[143],"results":[144,153],"analyzed":[146],"they":[148],"validated":[149],"theoretical":[150],"expectations.":[151],"showed":[154],"that":[155],"GaN-HEMT":[156],"demonstrated":[157],"higher":[158],"switching":[159],"frequency,":[160],"low":[161,175],"voltage":[163],"compared":[164],"MOSFET,":[167],"is":[169],"best":[170],"fit":[171],"use":[173]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":3}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}