{"id":"https://openalex.org/W4401880679","doi":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631518","title":"Mechanical Stress Effects on Dielectric Leakage and Interconnection Integrity in 3D NAND Flash Memory","display_name":"Mechanical Stress Effects on Dielectric Leakage and Interconnection Integrity in 3D NAND Flash Memory","publication_year":2024,"publication_date":"2024-06-16","ids":{"openalex":"https://openalex.org/W4401880679","doi":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631518"},"language":"en","primary_location":{"id":"doi:10.1109/vlsitechnologyandcir46783.2024.10631518","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/vlsitechnologyandcir46783.2024.10631518","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5066161983","display_name":"Se\u2010Hoon Lee","orcid":"https://orcid.org/0000-0002-9219-3350"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Sehoon Lee","raw_affiliation_strings":["Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea"],"affiliations":[{"raw_affiliation_string":"Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104230445","display_name":"Jieun Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jieun Lee","raw_affiliation_strings":["Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea"],"affiliations":[{"raw_affiliation_string":"Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114213940","display_name":"Sungpil Jang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sungpil Jang","raw_affiliation_strings":["Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea"],"affiliations":[{"raw_affiliation_string":"Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100739938","display_name":"Sujeong Kim","orcid":"https://orcid.org/0000-0002-2494-9216"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sujeong Kim","raw_affiliation_strings":["Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea"],"affiliations":[{"raw_affiliation_string":"Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049049116","display_name":"Choelgyu Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Choelgyu Kim","raw_affiliation_strings":["Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea"],"affiliations":[{"raw_affiliation_string":"Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109769337","display_name":"N.-J. Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Narae Jeong Sae-Jin Kim","raw_affiliation_strings":["Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea"],"affiliations":[{"raw_affiliation_string":"Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103257324","display_name":"Jisoo Kang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jisoo Kang","raw_affiliation_strings":["Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea"],"affiliations":[{"raw_affiliation_string":"Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109053434","display_name":"Juhee Hong","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Juhee Hong","raw_affiliation_strings":["Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea"],"affiliations":[{"raw_affiliation_string":"Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100377974","display_name":"Dong-Kyu Kim","orcid":"https://orcid.org/0000-0002-4186-0424"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong-Kyu Kim","raw_affiliation_strings":["Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea"],"affiliations":[{"raw_affiliation_string":"Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112174353","display_name":"Jun-Hee Lim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Junhee Lim","raw_affiliation_strings":["Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea"],"affiliations":[{"raw_affiliation_string":"Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100693838","display_name":"Sejun Park","orcid":"https://orcid.org/0000-0003-4617-8771"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sejun Park","raw_affiliation_strings":["Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea"],"affiliations":[{"raw_affiliation_string":"Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081078847","display_name":"Seungwan Hong","orcid":"https://orcid.org/0000-0001-8560-7925"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seungwan Hong","raw_affiliation_strings":["Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea"],"affiliations":[{"raw_affiliation_string":"Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113522124","display_name":"Sung\u2010Hoi Hur","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sunghoi Hur","raw_affiliation_strings":["Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea"],"affiliations":[{"raw_affiliation_string":"Device Solutions, Samsung Electronics Co.,Hwaseong-si,Gyeonggi-do,Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":13,"corresponding_author_ids":["https://openalex.org/A5066161983"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.11430527,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"35","issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9958000183105469,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.7364110946655273},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6215424537658691},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5765957236289978},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5611424446105957},{"id":"https://openalex.org/keywords/flash-memory","display_name":"Flash memory","score":0.5277500748634338},{"id":"https://openalex.org/keywords/flash","display_name":"Flash (photography)","score":0.48705819249153137},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.4846244752407074},{"id":"https://openalex.org/keywords/silc","display_name":"SILC","score":0.46518534421920776},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.45316919684410095},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41659823060035706},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4148638844490051},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.36517345905303955},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.29369401931762695},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.24608898162841797},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14312326908111572},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.0773453414440155},{"id":"https://openalex.org/keywords/computer-network","display_name":"Computer network","score":0.07249948382377625}],"concepts":[{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.7364110946655273},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6215424537658691},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5765957236289978},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5611424446105957},{"id":"https://openalex.org/C2776531357","wikidata":"https://www.wikidata.org/wiki/Q174077","display_name":"Flash memory","level":2,"score":0.5277500748634338},{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.48705819249153137},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.4846244752407074},{"id":"https://openalex.org/C86642149","wikidata":"https://www.wikidata.org/wiki/Q7390375","display_name":"SILC","level":3,"score":0.46518534421920776},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.45316919684410095},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41659823060035706},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4148638844490051},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.36517345905303955},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.29369401931762695},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.24608898162841797},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14312326908111572},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.0773453414440155},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.07249948382377625},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C153349607","wikidata":"https://www.wikidata.org/wiki/Q36649","display_name":"Visual arts","level":1,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsitechnologyandcir46783.2024.10631518","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/vlsitechnologyandcir46783.2024.10631518","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.550000011920929}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1995947206","https://openalex.org/W2020999961","https://openalex.org/W2138054929","https://openalex.org/W4252026737"],"related_works":["https://openalex.org/W4206097759","https://openalex.org/W2054139911","https://openalex.org/W1577524679","https://openalex.org/W2162027152","https://openalex.org/W2157458463","https://openalex.org/W1986614655","https://openalex.org/W2489439822","https://openalex.org/W2116397085","https://openalex.org/W2535372975","https://openalex.org/W4237143391"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3],"comprehensive":[4],"study":[5],"of":[6],"stress-induced":[7],"leakage":[8,27,92],"in":[9,18,38,70,85],"dielectrics,":[10],"combining":[11],"structural":[12],"analysis":[13,49],"with":[14,65],"electrical":[15,48,56,67],"transport":[16,57],"properties":[17],"the":[19,44],"latest":[20],"3D":[21],"NAND":[22],"Flash":[23],"memory":[24],"products.":[25],"Stress-induced":[26],"is":[28,60],"prominently":[29],"observed":[30],"near":[31],"wide":[32],"aluminum":[33],"metal":[34],"patterns,":[35],"as":[36],"changes":[37],"stress":[39],"and":[40,50,88],"strain":[41],"significantly":[42],"influence":[43],"dielectric":[45],"properties.":[46],"Through":[47],"DFT":[51],"simulations,":[52],"we":[53],"successfully":[54],"analyzed":[55],"phenomenon,":[58],"which":[59],"explained":[61],"by":[62],"Schottky":[63],"emission":[64],"decreased":[66],"barrier":[68],"height":[69],"amorphous":[71],"SiO<inf":[72],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[73],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[74],"under":[75],"tensile":[76],"stress.":[77],"We":[78],"also":[79],"proposed":[80],"process":[81],"improvements,":[82],"including":[83],"adjustments":[84],"annealing":[86],"temperature":[87],"air-gap":[89],"to":[90],"mitigate":[91],"issues.":[93]},"counts_by_year":[],"updated_date":"2025-12-26T23:08:49.675405","created_date":"2025-10-10T00:00:00"}